BE773362A - A charge storage semiconductor - Google Patents

A charge storage semiconductor

Info

Publication number
BE773362A
BE773362A BE773362A BE773362A BE773362A BE 773362 A BE773362 A BE 773362A BE 773362 A BE773362 A BE 773362A BE 773362 A BE773362 A BE 773362A BE 773362 A BE773362 A BE 773362A
Authority
BE
Belgium
Prior art keywords
charge storage
storage semiconductor
semiconductor
charge
Prior art date
Application number
BE773362A
Other languages
French (fr)
Inventor
G E Smith
M F Tompsett
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US7805070A priority Critical
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE773362A publication Critical patent/BE773362A/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices
BE773362A 1970-10-05 1971-09-30 A charge storage semiconductor BE773362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US7805070A true 1970-10-05 1970-10-05

Publications (1)

Publication Number Publication Date
BE773362A true BE773362A (en) 1972-01-17

Family

ID=22141614

Family Applications (1)

Application Number Title Priority Date Filing Date
BE773362A BE773362A (en) 1970-10-05 1971-09-30 A charge storage semiconductor

Country Status (7)

Country Link
AU (1) AU432367B2 (en)
BE (1) BE773362A (en)
CH (1) CH537631A (en)
DE (1) DE2149325A1 (en)
FR (1) FR2110213A1 (en)
GB (1) GB1325099A (en)
NL (1) NL7113593A (en)

Also Published As

Publication number Publication date
AU3398871A (en) 1973-02-22
CH537631A (en) 1973-05-31
FR2110213A1 (en) 1972-06-02
AU432367B2 (en) 1973-02-22
GB1325099A (en) 1973-08-01
BE773362A1 (en)
NL7113593A (en) 1972-04-07
DE2149325A1 (en) 1972-04-13

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