BE770353A - HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR JUNCTION - Google Patents
HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR JUNCTIONInfo
- Publication number
- BE770353A BE770353A BE770353A BE770353A BE770353A BE 770353 A BE770353 A BE 770353A BE 770353 A BE770353 A BE 770353A BE 770353 A BE770353 A BE 770353A BE 770353 A BE770353 A BE 770353A
- Authority
- BE
- Belgium
- Prior art keywords
- breakdown voltage
- high breakdown
- semiconductor junction
- voltage semiconductor
- junction
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5997370A | 1970-07-31 | 1970-07-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE770353A true BE770353A (en) | 1971-12-01 |
Family
ID=22026513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE770353A BE770353A (en) | 1970-07-31 | 1971-07-22 | HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR JUNCTION |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5224833B1 (en) |
BE (1) | BE770353A (en) |
DE (1) | DE2130457C2 (en) |
FR (1) | FR2099704B3 (en) |
GB (1) | GB1348697A (en) |
HK (1) | HK42277A (en) |
NL (1) | NL7107832A (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1085486B (en) * | 1977-05-30 | 1985-05-28 | Ates Componenti Elettron | INTEGRATED MONOLITHIC SEMICONDUCTOR STRUCTURE WITH PLANAR JUNCTIONS SCREENED BY EXTERNAL ELECTROSTATIC FIELDS |
DE2936724A1 (en) * | 1978-09-11 | 1980-03-20 | Tokyo Shibaura Electric Co | Semiconductor device contg. layer of polycrystalline silicon |
DE2944937A1 (en) * | 1979-11-07 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | SEMICONDUCTOR COMPONENT |
DE3044341C2 (en) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Phototransistor |
DE3117804A1 (en) * | 1981-05-06 | 1982-11-25 | Robert Bosch Gmbh, 7000 Stuttgart | "PLANAR TRANSISTOR STRUCTURE" |
DE3201545A1 (en) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | PLANAR SEMICONDUCTOR ARRANGEMENT |
DE3227536A1 (en) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | DARLINGTON TRANSISTOR CIRCUIT |
DE3219598A1 (en) * | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | SCHOTTKY PERFORMANCE DIODE |
DE3520599A1 (en) * | 1984-06-15 | 1985-12-19 | Rca Corp., Princeton, N.J. | Semiconductor component |
KR890004495B1 (en) * | 1984-11-29 | 1989-11-06 | 가부시끼가이샤 도오시바 | Semiconductor device |
EP0255968A3 (en) * | 1986-08-08 | 1988-08-10 | SILICONIX Incorporated | High sheet resistance polycrystalline silicone film for increasing diode breakdown voltage |
JPS63136668A (en) * | 1986-11-28 | 1988-06-08 | Fuji Electric Co Ltd | Manufacture of semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA941074A (en) * | 1964-04-16 | 1974-01-29 | Northern Electric Company Limited | Semiconductor devices with field electrodes |
SE300472B (en) * | 1965-03-31 | 1968-04-29 | Asea Ab | |
US3463977A (en) * | 1966-04-21 | 1969-08-26 | Fairchild Camera Instr Co | Optimized double-ring semiconductor device |
DE1614815A1 (en) * | 1967-05-20 | 1970-12-23 | Telefunken Patent | Semiconductor device |
-
1971
- 1971-05-11 GB GB1348697D patent/GB1348697A/en not_active Expired
- 1971-06-08 NL NL7107832A patent/NL7107832A/xx unknown
- 1971-06-11 JP JP4111871A patent/JPS5224833B1/ja active Pending
- 1971-06-19 DE DE19712130457 patent/DE2130457C2/en not_active Expired
- 1971-07-21 FR FR7126688A patent/FR2099704B3/fr not_active Expired
- 1971-07-22 BE BE770353A patent/BE770353A/en unknown
-
1977
- 1977-08-11 HK HK42277A patent/HK42277A/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR2099704B3 (en) | 1973-08-10 |
DE2130457C2 (en) | 1986-09-18 |
JPS5224833B1 (en) | 1977-07-04 |
HK42277A (en) | 1977-08-19 |
FR2099704A7 (en) | 1972-03-17 |
GB1348697A (en) | 1974-03-20 |
DE2130457A1 (en) | 1972-02-03 |
NL7107832A (en) | 1972-02-02 |
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