BE636324A - - Google Patents

Info

Publication number
BE636324A
BE636324A BE636324DA BE636324A BE 636324 A BE636324 A BE 636324A BE 636324D A BE636324D A BE 636324DA BE 636324 A BE636324 A BE 636324A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE636324A publication Critical patent/BE636324A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/904Charge carrier lifetime control
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/938Lattice strain control or utilization

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
BE636324D 1962-08-28 BE636324A (US20110009641A1-20110113-C00256.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US219880A US3195218A (en) 1962-08-28 1962-08-28 Method of influencing minority carrier lifetime in the semiconductor body of a pn junction device

Publications (1)

Publication Number Publication Date
BE636324A true BE636324A (US20110009641A1-20110113-C00256.png)

Family

ID=22821136

Family Applications (1)

Application Number Title Priority Date Filing Date
BE636324D BE636324A (US20110009641A1-20110113-C00256.png) 1962-08-28

Country Status (7)

Country Link
US (1) US3195218A (US20110009641A1-20110113-C00256.png)
BE (1) BE636324A (US20110009641A1-20110113-C00256.png)
CH (1) CH415863A (US20110009641A1-20110113-C00256.png)
DE (1) DE1464704B2 (US20110009641A1-20110113-C00256.png)
GB (1) GB1006807A (US20110009641A1-20110113-C00256.png)
NL (2) NL139628B (US20110009641A1-20110113-C00256.png)
SE (1) SE314744B (US20110009641A1-20110113-C00256.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461547A (en) * 1965-07-13 1969-08-19 United Aircraft Corp Process for making and testing semiconductive devices
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
US5418172A (en) * 1993-06-29 1995-05-23 Memc Electronic Materials S.P.A. Method for detecting sources of contamination in silicon using a contamination monitor wafer
WO2006053213A1 (en) * 2004-11-09 2006-05-18 University Of Florida Research Foundation, Inc. Methods and articles incorporating local stress for performance improvement of strained semiconductor devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2299778A (en) * 1939-06-07 1942-10-27 Haynes Stellite Co Making metal composite articles
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
NL122784C (US20110009641A1-20110113-C00256.png) * 1959-04-15

Also Published As

Publication number Publication date
DE1464704A1 (de) 1969-02-13
DE1464704B2 (de) 1971-11-25
US3195218A (en) 1965-07-20
NL139628B (nl) 1973-08-15
NL296617A (US20110009641A1-20110113-C00256.png)
SE314744B (US20110009641A1-20110113-C00256.png) 1969-09-15
GB1006807A (en) 1965-10-06
CH415863A (de) 1966-06-30

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