BE626462A - - Google Patents
Info
- Publication number
- BE626462A BE626462A BE626462DA BE626462A BE 626462 A BE626462 A BE 626462A BE 626462D A BE626462D A BE 626462DA BE 626462 A BE626462 A BE 626462A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/152—Single crystal on amorphous substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/967—Semiconductor on specified insulator
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US161992A US3139361A (en) | 1961-12-26 | 1961-12-26 | Method of forming single crystal films on a material in fluid form |
Publications (1)
Publication Number | Publication Date |
---|---|
BE626462A true BE626462A (US06256357-20010703-M00001.png) |
Family
ID=22583707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE626462D BE626462A (US06256357-20010703-M00001.png) | 1961-12-26 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3139361A (US06256357-20010703-M00001.png) |
BE (1) | BE626462A (US06256357-20010703-M00001.png) |
GB (1) | GB966464A (US06256357-20010703-M00001.png) |
NL (1) | NL286877A (US06256357-20010703-M00001.png) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1053046A (US06256357-20010703-M00001.png) * | 1963-02-25 | 1900-01-01 | ||
FR1370724A (fr) * | 1963-07-15 | 1964-08-28 | Electronique & Automatisme Sa | Procédé de réalisation de couches minces monocristallines |
US3372069A (en) * | 1963-10-22 | 1968-03-05 | Texas Instruments Inc | Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor |
US3335038A (en) * | 1964-03-30 | 1967-08-08 | Ibm | Methods of producing single crystals on polycrystalline substrates and devices using same |
US3337375A (en) * | 1964-04-13 | 1967-08-22 | Sprague Electric Co | Semiconductor method and device |
US3484662A (en) * | 1965-01-15 | 1969-12-16 | North American Rockwell | Thin film transistor on an insulating substrate |
US3645785A (en) * | 1969-11-12 | 1972-02-29 | Texas Instruments Inc | Ohmic contact system |
US3770565A (en) * | 1972-01-05 | 1973-11-06 | Us Navy | Plastic mounting of epitaxially grown iv-vi compound semiconducting films |
US3941647A (en) * | 1973-03-08 | 1976-03-02 | Siemens Aktiengesellschaft | Method of producing epitaxially semiconductor layers |
US4058418A (en) * | 1974-04-01 | 1977-11-15 | Solarex Corporation | Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth |
US3993533A (en) * | 1975-04-09 | 1976-11-23 | Carnegie-Mellon University | Method for making semiconductors for solar cells |
FR2407892A1 (fr) * | 1977-11-04 | 1979-06-01 | Rhone Poulenc Ind | Procede de fabrication de silicium pour la conversion photovoltaique |
US4323419A (en) * | 1980-05-08 | 1982-04-06 | Atlantic Richfield Company | Method for ribbon solar cell fabrication |
US4374163A (en) * | 1981-09-29 | 1983-02-15 | Westinghouse Electric Corp. | Method of vapor deposition |
US11119049B2 (en) * | 2015-07-21 | 2021-09-14 | Fluidsens International Inc. | Particles in liquid detection method and particles in liquid detection system and method to detect particles in the air |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1141561A (fr) * | 1956-01-20 | 1957-09-04 | Cedel | Procédé et moyens pour la fabrication de matériaux semi-conducteurs |
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0
- BE BE626462D patent/BE626462A/xx unknown
- NL NL286877D patent/NL286877A/xx unknown
-
1961
- 1961-12-26 US US161992A patent/US3139361A/en not_active Expired - Lifetime
-
1962
- 1962-12-24 GB GB48560/62A patent/GB966464A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB966464A (en) | 1964-08-12 |
US3139361A (en) | 1964-06-30 |
NL286877A (US06256357-20010703-M00001.png) |