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Application filed by Siemens AgfiledCriticalSiemens Ag
Publication of BE608950ApublicationCriticalpatent/BE608950A/fr
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
C30B13/28—Controlling or regulating
C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
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Chemical & Material Sciences
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Physics & Mathematics
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Electromagnetism
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Engineering & Computer Science
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Crystallography & Structural Chemistry
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Materials Engineering
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Metallurgy
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Organic Chemistry
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Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
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BE608950A1960-10-191961-10-09Procédé destiné à contrôler l'épaisseur du barreau dans la fusion par zone sans creuset
BE608950A
(fr)