AU619815B2 - Electronic parts, encapsulant for electronic parts, and encapsulating method - Google Patents

Electronic parts, encapsulant for electronic parts, and encapsulating method Download PDF

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Publication number
AU619815B2
AU619815B2 AU32222/89A AU3222289A AU619815B2 AU 619815 B2 AU619815 B2 AU 619815B2 AU 32222/89 A AU32222/89 A AU 32222/89A AU 3222289 A AU3222289 A AU 3222289A AU 619815 B2 AU619815 B2 AU 619815B2
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Prior art keywords
encapsulant
electronic part
dihydric alcohol
electronic
encapsulating
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AU32222/89A
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AU3222289A (en
Inventor
Kakutaroo Kauchi
Tooru Tomoshige
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Mitsui Chemicals Inc
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Mitsui Petrochemical Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

la This invention relates to electronic parts or devices such as IC's and LSI's, and more particularly, to an encapsulant having improved chemical resistance and hardness o and free of interference by chlorine contaminants, an encapsulating method which can take advantage of such an encapsulant, and electronic parts fabricated by the method and having such improved properties.
a. e In the prior art manufacature of electronic parts such o as IC's and LSI's, resins, for example, epoxy resins are often 16 used to encapsulate IC and similar elements.
In general, the epoxy reain has excellent chemical resistance, electrical properties, mechanical properties, and adhesion and has been widely used as encapsulants in the field of electronic and electric materials. Since a chloride such 15 as epichlorohydrin is used as a stock material to prepare an epoxy resin, the chloride, free chlorine, hydrolytic chlorine and the like are left in the resulting resin.
If such a resin containing chlorine is used as an oe encapsulant, it would release a considerable amount of chloride ions under certain service conditions, deteriorating the reliability of the electronic part. In addition, the resin has a markedly extended curing time, resulting in an inefficient procedure.
For this reason, Japanese Patent Application Kokai No.
2 58-134112 proposes a technique of treating an epoxy re,in with an excess alkali compound in a solvent mixture of methyl ethyl ketone and isobutyl ketone, thereby lowering the content of hydrolytic chlorine in the resin. This technique has the -2- '10 4 1 9@ *6 4 6 4 44 qif problems that the alkali compound acts as a catalyst for the ketones to form high-boiling condensates which would be left in the resulting resin and that a fine polymer (gel) would form. In addition, it is difficult to remove chlorine to such an extent that the interference by chlorine is negligible.
SUMMARY OF THE INVENTION An object of the present invention is to overcome the above mentioned problems of the prior art and to provide an electronic part having improved chemical resistance and hardness and free of interference by chlorine contaminants.
Another object of the present invention is to provide an encapsulant useful for electronic parts with the above-mentioned properties and having a reduced curing time and good mold release.
A further object of the present invention is to provide an encapsulating method useful in preparing electronic parts having the above-mentioned properties.
According to a first aspect of the present invention, theoe is provided an electronic part wherein an electronic element (excluding light-emitting and receiving elements) is encapsulated with a polymer of a polymerizable liquid composition comprising a monomer or an oligomer or a mixture thereof of a bis(allyl carbonate) ef an aliphatic, cycloaliphatic or aromatic dihydric alcohol having a general formula: CHA-CH-CH -0-C -00 G nH-CH-CH, 0 0 n mwspc#2818 91 1165 C v
I
10 *t 2 25 a i 15 9 9 -2awherein R is a residue of a dihydric alcohol, and n has a value or an average value in the range of from 1 to According to a second aspect of the present invention, there is provided an encapsulant for electronic parts, comprising a monomer or oligomer of a diallyl compound or a mixture thereof.
According to a third aspect of the present invention, there is provided a method for encapsulating an electronic part, comprising placing an electronic element (excluding lightemitting and receiving elements) in a mold, casting an encapsulant into the mold, and polymerizing said encapsulant, wherein said encapsulant comprises a polymer of a polymerizable .liquid composition comprising a monomer or an oligomer or a mixture thereof of a bis(allyl carbonate) of an aliphatic, cycloaliphatic or aromatic dihydric alcohol having a general formula:
CH
2 -CH-CH,-O-C-0 H -CH=CH I 1I J 0 0 n wherein R is a residue of a dihydric alcohol, and n has a value or an average value in the range of from 1 to mwspc#2818 91 11 6 rr 3 C10 o- r n v w e 3 According to a fourth aspect of the present invention, there is provided a method for encapsulating an electronic part, comprising placing an electronic element (excluding light-emitting and receiving elements) in a mold, casting the above-defined encapsulant into the mold, and polymerizing encapsulant while a liquid having less solubility in encapsulant and a lower density than encapsulant is present on encapsulant According to a fifth aspect of the present invention, to there is provided a method for encapsulating an electronic part, comprising placing an electronic element (excluding o 4 light-emitting and receiving elements) in a mold, casting the above-defined encapsulant into the mold, and polymerizing encapsulant while keeping the surface of encapsulant (A) 15 in contact with an inert gas rtmosphere having an oxygen concentration of up to 1%.
The monomer or oligomer or mixture thereof containing a diallyl compound as an essential ingredient used in the present disclosure encompasses a monomer alone, an oligomer S Q alone, a mixture of a monomer and an oligomer, a mixture of two or more monomers, a mixture of two or more oligomers, and a mixture of at least one monomer and at least one oligomer.
The polymer used in the present disclosure may be either a a homoDolymer or a copolymer.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross section of an IC package as one
A
embodiment of the electronic part of the present invention.
FIG. 2 is a cross section of an IC package as another embodiment of the electronic part of the present invention.
DETAILED DESCRIPTION OF THE INVENTION The invention will be described in detail by referring to the preferred embodiment shown in the drawing.
i s 0
I?
i The electronic elements according to the present invention are electronic elements excluding light-emitting and receiving elements, for example, IC elements, LSI elements, semiconductor elements or pellets, semiconductor resistance elements, transistors, and diodes.
The electronic parts according to the present invention are electronic part3 excluding light-emitting and receiving parts, for example, IC parts, LSI parts, transistor parts, diode parts, varistors, thyristors, and semiconductor IC S(O parts.
t s The electronic parts, .ncapsulant for electronic parts, and encapsulating method are not limited to the encapsulation \i of an electronic element, but are applicable to the encapsulation between electronic elements as well as partial and entire encapsulation of an electronic part.
FIG. 1 and FIG. 2 illustrate an IC package 1 as one Spreferred embodiment of the electronic part according to the 4 present invention.
The electronic part according to the present invention as typified by the IC package 1 may be any such part and is not particularly limited in shape or the like insofar as an electronic part, for example, an IC element 5 is encapsulated with a specific polymer 7.
FIG. 1 is a cross-sectional view of the IC package 1.
iS The IC package 1 is constructed such that an IC element 5 is mounted on an IC mount base 3 of a lead frame 2, electrodes on the IC element 5 are electrically connected to corresponding leads 4 of the lead frame through bonding wires 6, and the assembly is encapsulated with a polymer 7.
%0 The electronic part of the present invention is characterized by encapsulation with a specific polymer, more particularly by encapsulation with a homopolymer or copolymer of a polymerizable liquid composition (to be referred to as ri I rrsrlil~~ri~ encapsulant A, hereinafter) comprising a monomer or oligomer of a diallyl compound or a mixture thereof.
A chlorine content of the liquid composition is i preferably up to 50 ppm, and the chlorine content of the liquid composition is measured by Wick Bold Burning Method (ASTM-B-2785, ASTM-C-758).
When this liquid composition is used as an encapsulant for an electronic part, no interference by chlorine occurs because the composition is substantially free of chlorine and to thus the content of chlorine remaining in the encapsulating resin is up to 50 ppm (preferably up to 20 ppm).
The encapsulant is preferably a liquid composition comprising an oligomer or a mixture of oligomers of a S. di(allyl carbonate) of an aliphatic, cycloaliphatic or aromatic dihydric alcohol.
Examples of the composition include a composition comprising a monomer or an oligomer or a mixture thereof of a bis(allyl carbonate) of an aliphatic, cycloaliphatic or aromatic dihydric alcohol having the general formula:
CH
2
=CH-CH
2 R-0-C-0--CH2-CH=CH2 0 0 n wherein R is a residue of a dihydric alcohol, and n has a value or an average value in the range of from 1 to S 15 preferably from 2 to Component is preferably the reaction product of diallyl carbonate and a dihydric alcohol in a molar ratio of 4i; or lower, more preferably in a molar ratio of 2:1.
Preferred examples of the dihydric alcohol include '0 ethlene glycol, 1,3-propanediol, 1,4-butanediol, 1,6-hexanediol, diethylene glycol, polyethylene glycol, dipropylene glycol, propylene glycol, neopentyl glycol, trimethylpentane lan diol, cyclohexane dimethanol, bis(hydroxymethyl)tricyclo decane, 2,7-norbornane diol, a,a'-xylene diol, 1,4-bis- (hydroxyethoxybenzene), and 2,2-bis[4-(hydroxyethoxy) phenyl]propane alone and mixtures thereof.
The encapsulant of the present invention is preferably a liquid composition comprising components and shown below. Japanese Patent Application Kokai No. 59-140214 is incorporated herein by reference.
The preferred composition comprises 1O 10 to 90% by weight of an oligomer or a mixture of oligomers of a bis(allyl carbonate) of an aliphatic, cycloaliphatic or aromatic dihydric alcohol having the general formula:
CH
2
=CH-CH
2 R-O-C-0O CH 2 -CH-CH2 0 0 n wherein R is a residue of a dihydric alcohol, and n has a value or an average value in the range of from 1 to preferably from 2 to 10, with the proviso that the content of a dihydric alcohol bis(allyl carbonate) monomer optionally i present in the oligomer is up to 50% by weight; zo 0 to 90% by weight of a compound selected from the group consisting of a monomeric bis- or tri(allyl Scarbonate) of an aliphatic, cycloaliphatic or aromatic di- or itrihydric alcohol having the general formula: aR O-C-O-CHa-CH-CH 0 n wherein R' is a residue of a di- or trihydric alcohol, and n' is equal to 2 or 3, or a mixture thereof, with the proviso that the content of an oligomeric di(allyl carbonate) of a dior trihydric alcohol or a poly(allyl carbonate) of a di- or trihydric alcohol optionally present in the monokier or the 17 17, se r c -1 7 mixture is up to 30% by weight, an allyl ester of an aliphatic or aromatic di- or tricarboxylic acid having the general formula: R" C-0-CH 2
-CH=CH
2
II
In" wherein R" is a residue of a di- or tricarboxylic acid, and n" is equal to 2 or 3, and triallyl cyanurate and triallyl isocyanurate; and 0 to 30% by weight of an acrylic or vinyl monomer; tO with the proviso that the total of components and is more than 0.
The preferred component. is the reaction product of diallyl carbonate and a dihydric alcohol in a molar ratio of 4:1 or lower, more preferably in a molar ratio of 2:1. The .S dihydric alcohol is preferably selected from the group consisting of ethylene gl,'col, 1,3-propaediol, 1,4-butane- 4 diol, 1,6-hexanediol, diethylene glycol, polyethylene glycol, dipropylene glycol, propylene glycol, neopentyl glycol, trimethylpentane diol, cyclohexane dimethanol, bis(hydroxyao methyl)tricyclodecane, 2,7-norbornane diol, a,X'-xylene diol, 1,4-his(hydroxyethoxybenzene), and 2,2-bis 4-(hydroxyethoxy)phenyllpropane.
The preferred component is the reaction product of diallyl carbonate and a di- or trihydric alcohol in a molar X rato of 6:1 or higher, more preferably in a molar ratio of 12:1. The di- or trihydric alcohol is preferably selected from the group consisting of ethylene glycol, 1,3-propanediol, 1,4-butanediol, 1,6-hexanediol, diethylene glycol, polyethylene glycol, dipropylene glycol, propylene glycol, 't neopentyl glycol, trimethylpentane diol, cyclohexane dimethanol, bis(hydroxymethyl) tricyclodecane, 2,7-norbornane diol, a,a'-xylene diol, 1,4-bis(hydroxyethoxybenzene), 2,2-
I__
I bis[4-(hydroxyethoxy)phenyl]propane, trimethylol propane, and tri(hydroxyethyl) isocyanurate alone and mixtures thereof.
Also included in component are diallyl phthalate, diallyl succinate, diallyl adipate, diallyl chlorendate, diallyl glycolate, diallyl naphthalene dicarboxylate, and triallyl mellitate.
Component is preferably selected from vinyl acetate, vinyl benzoate, methyl methacrylate, phenyl methacrylate, methyl acrylate, methyl maleate, maleic anhydride, and iO vinylidene chloride alone and mixtures thereof.
SAnother example of the diallyl compounds include a copolymerizable composition comprising a diallyl ester of a nuclearly halo-substituted benzene dicarboxylic acid and diethylene glycol diallyl carbonate as disclosed in Japanese Patent Application Kokai No. 59-45312; (II) a copolymerizable composition comprising at least one ester of a nuclearly halo-substituted benzene dicarboxylic acid (for example, bisallyl 2,4-dichloroterephthalate) and at least one radical-polymerizable monofunctional monomer bearing 1O an aromatic ring and capable of forming a homopolymer having a refractive index of at least 1.55 (for example, phenyl methacrylate) as disclosed in Japanese Patent Application Kokai No. 59-8709; (III) a copolymerizable composition comprising at least one bisallyl carbonate or bis-p-methylallyl carbonate (for example, 1,4-bis(hydroxyethoxy)benzene bisallyl carbonate) and at least one radical-polymerizable monofunctional monomer bearing an aromatic ring and capable of forming a homopolymer having a refractive index of at least 1.55 (for example, phenyl methacrylate) as disclosed in Japanese Patent Application Kokai No, 59-8710, (IV) a copolymerizable composition comprising a monomer obtained by reacting a mono-ol (for example, 4-benzyl-phenol) with an unsaturated carboxylic acid or chloride thereof (for 9 example, acrylic acid or chloride thereof) and a radicalpolymerizable monomer capable of forming a homopolymer having a refractive index of at least 1.55 (for example, styrene) as disclosed in Japanese Patent Application Kokai No. 59-96109; S a copolymerizable composition comprising a chlorobenzoic acid allyl ester (for example, 2,3-dichlorobenzoic acid diallyl ester) and a difunctional monomer (for example, tetrabromophthalic acid diallyl ester) as disclosed in Japanese Patent Application Kokai No. 59-96113; 0 10 (VI) a copolymerizable composition as disclosed in 0 0 :(VII) diethylene glycol bisallyl carbonate; and S(VIII) copolymerizable compositions of a diallyl compound such as diethylene glycol diallyl carbonate, 1,4- 15 bis(hydroxyethoxy)benzene diallyl carbonate, and 2,4dichloroterephthalic acid diallyl ester and a vinyl monomer having an aromatic ring such as phenyl methacrylate and benzyl methacrylate.
The polymerizable liquid composition may contain another S 20 monomer and a filler in such amounts that they do not detract I from the physical properties of the resulting polymer, For example, a mono (meth)acrylic compound, di(meth)acrylic Scompound, or unsaturated carboxylic acid such as maleic anhydride may be added in an amount of up to 30% by weight, or a silane coupling agent such as vinyl triethoxysilane may be added in an amount of up to 10% by weight, based on the weight of the polymer.
In the practice of the present invention, encapsulant may further contain a polymerization initiator The polymerization initiator used in polymerizing encapsulant may be any of photo polymerization initiators, thermal polymerization initiators, and photo and thermal polymerization initiators, and mixtures thereof.
r- 1 ii The photo polymerization initiators include electron beam and radiation polymerization initiators as well as photo polymerization initiators.
A typical example of the photo polymerization initiator S is 2-hydroxy-2-methyl-1l-phenyl-propan-l-one., Examples of the thermal polymerization initiators include peroxydicart ,,ates such as diisopropyl peroxydicarbonate, di-sec-butyl peroxydicarbonate, dicyclohexyl peroxydicarbonate, and tert-butyl perbenzoate; organic to peroxides such as benzoyl peroxide, acetyl peroxide, tert- 0 0 butyl hydroperoxide, cumene hydroperoxide, di-tert-butyl 0: peroxide, tert-butyl peroxybenzoate, lauroyl peroxide, diisopropyl peroxydicarbonate, dimethyl ethyl ketone peroxide, S and diacyl peroxide; and radical initiators such as azobisisobutyronitrile and azobismethylisovaleronitrile.
A typical example of the photo and thermal polymerization initiators is the compound of the following formula: C t1u)-0-00- (t-BU 0 0 1"115Polymerization iniiator may be used to polym,-eriz encapsulant in an amount of 0.1 to 10% by weightj preferably 1 to 6 by weight based on encapsulant Encapsulant may be used in semi-cured state o- B stage if desired.
0 The method for encapsulating the IC element or the like with encapsulat is not particularly limited although the following encapsulating methods are preferred.
Encapsulant is polymeried while its surface is in contact with an inert gas atmosphere having at xygenr 11 concentration of up to preferably up to more preferably up to 0.01%.
If encapsulant to be polymerized in the presence of a radical polymerization initiator is in contact with air, Soxygen will consume active radicals so that the surface of the polymerizing encapsulant in contact with air may sometimes remain viscous liquid or gel without reaching a sufficient molecular weight.
In order to complete polymerization evenly so that the (O surface hardness may reach a pencil hardness of at least 2B, S' preferably at least HB, the atmosphere under which S polymerization is carried out should be an inert gas such as nitrogen and argon having an oxygen concentration of up to 1%, Spreferably up to more preferably up to 0.01%.
.IS(2) Encapsulant is polymerized in the mold while the surface of encapsulant in the mold is covered with a liquid having low solubility in cncapsulant and a lower density than encapsulant 0 l Liquid is not particularly limited as long as it is S" O less soluble in encapsulant and has a lower density than o o encapsulant (A) The density of liquid is preferably from 0.7 to 1 g/cm3, more preferably from 0,8 to 0.95 g/cm 3 Consumption of radicals in encapsulant can be 0 X5 controlled for the same reason as in method (1) °Liquid may be water, for example, which seals any opening to block oxygen, Water is suitable for polymerization at relatively low temperatures because of its high vapor pressureN Liquid may also be a liquid synthetic hydrocarbon polymer having a low molecular weight or a liquid hydrocarbon mixture such as mineral oil.
Examples of the synthetic hydrocarbon polymers includo poly(c-olefin) oils such as polydecene-l# alkyl aromatic oils 12 such as alkylbenzenes, polybutene oil or liquid polybutene, polyhexene, alkylnaphthene oils such as 2,4-dicyclohexyl-2rethylpentane oil, and ethlylene-ca-olef in random copolymer oils 8 such as ethylene-propylene random copolymer oil., Preferred among them are those having a molecular weight o f at least 500, more preferably from 1,000 to 10,000, Also preferred are ethylene-a-olefin. random copolymer L oils having a number average molecular weight (Mn) of from 500 to 5,000, especially from 1,500 to 3,OOQ.
iv Particularly preferred are liquid, low-molecular weight ethylene-a.-olefin copolymers consisting of 30 to 70 mol% of 44 ethylene units and 30 to 70 mol% of ca-oJefin units and having a number average molecular weight (11n) of from 1,000 to 5,000 4 Id a Q value (weight average molecular weight/number average it0 molecular weight) of up to 3, when liquid is a liquid polyolefin or the like, the liquid itself exhibits mold release effect, considerab-ly facilitating mold release operation, 4 At the nd ofC polymerization, the liquid polyolefin may be readily removed Q with an organic solvent such as hejanet kerosene, and trichloroethyleve 4 0 Encapsulating methods and may be combined, Encapsulant is polymerized in the mold while the surface. of encapsulant in the mold is covered with liquid 2. 5 and further with an inert gas atmosphere having an ox<yqen concentration of up t~o 1%.
Better results are obtained from the combined use of e ncapsulat ing methods and (2)4 Polymerization may be carried out under various '1Q conditions depending on the identity of polymeiza~tio~n initiator, In the case of thermal polymrerization, the composition may be heated in a heating tank to a. temerature of about 30 to 1.5Q 0 OC preterably about 40 to 120*C for about 1/2 to 1/2 hours, preferably atbOut I to 4 houts, al~though the 13 exact value will vary with the shape and size. In the case of photo polymerization, polymerization may be carried out under a high-pressure mercury lamp with a power of 60 to 150 W/cm for about 1 r.inute to 2 hours, preferably 3 to 30 minutes at a temperature of about 40 to 120°C, preferably about 60 to 100 0
C.
Examples Examples of the present invention are given below by way of illustration and not by way of limitation.
00 0 o o o 0 Example 1 An assembly was fabricated by mounting an IC element on a mount base 3 of a lead frame 2 and connecting electrodes S- on the IC element 5 to corresponding leads 4 of the lead frame through bonding wires 6 as shown in FIG. 1, and set in a mold, which was then charged with a homogeneously mixed liquid composition given below as encapsulant The mold was placed in a vacuum oven, which was purged with argon gas and then heated stepwise from 4 0 1C to 90°C to complete o0o polymerization in 5 hours, obtaining an IC package.
0 B
I
The reaction product obtained by reacting diallyl So carbonate with diethylene glycol in a molar ratio of 2:1 0 in the presence of sodium ethoxide under the conditions described in Japanese Patent Application Kokai No. 56- 133246 (consisting of 30% by weight of diethylene glycol bisallyl carbonate and 70% by weight of oligo-carbonate, n 1 3 to 10) 55% by weight Tris(allyl carbonate) of tris(hydroxyethyl) isocyanurate obtained by reacting diallyl carbonate with 0 tris(hydroxyethyl) isocyanurate in a molar ratio of 12:1 12.4% by weight r_ -I-r I 9, r 0 9 00 o malO 0 a 0 0 I o O *I 0 1 9 00 o I 5 94 I *0 a* o a a o a
I
QI
e i o l zo i a Diethylene glycol diallyl carbonate 27.5% by weight Vinyl acetate 5% by weight Polymerization initiator (per 100 parts of the foregoing ingredients) Diisopropyl peroxydicarbonate 2.5 pbw Example 2 A similar type IC element assembly as used in Example 1 was set in a mold as shown in Fig. 2. A composition given below as encapsulant (A)-II was cast into the mold and then covered with a layer 8 of a liquid ethylene-propylene copolymer (Mn 2500, Q 2.0, specific gravity 0.846) having a thickness of about 2 mm as shown in Fig.2. The mold was placed in an air oven, which was heated stepwise from 40'C to 90°C, completing polymerization in 2 hours.
-I
The reaction product obtained by reacting diallyl carbonate with diethylene glycol in a molar ratio of 2:1 in the presence of sodium ethoxide under the conditions described in Japanese Patent Application Kokai No. 56- 133246 (consisting of 30% by weight of diethylene glycol diallyl carbonate and 70% by weight of oligo-carbonate, n 3 to 10) 58% by weight Tris(allyl carbonate) of tris(hydroxyethyl) isocyanurate obtained by reacting diallyl carbonate with tris(hydroxyethyl) isocyanurate in a molar ratio of 12:1 13% by weight Diethylene glycol diallyl carbonate 29% by weight Polymerization initiator (per 100 parts of the foregoing ingredients) Diisopropyl peroxydicarbonate 2.7 pbw 1L I- Example 3 The procedure of Example 2 was repeated except that encapsulant (A)-II was replaced by completing polymerization in 3 hours as in Example 2.
SComparative Example 1 An IC element-lead frame assembly as used in Example 1 was set in a mold. An epoxy resin consisting of 100 parts of a major agent, Pelnox XN-1886-3 and 110 parts of a curing agent, Pelcure XV-2263 (manufactured by NIPPON PELNOX K.K.) (o was cast into the mold. The epoxy resin w:as cured at 120°C I for 8 hours, obtaining an IC package.
0 0 The IC packages obtained in the foregoing Examples and Comparative Example were evaluated as follows, with the S results shown in Table 1.
Mold Release Mold release was evaluated by removing the cured resin from the mold without using a mold release agent.
C very easily releasable S0: manually releasable X: manually unreleasable Surface hardness Surface flat portion 9 of the resin used for encapsulation was sliced and sliced surface was measured for surface hardness by a method according t' JIS K5401.
The chlorine content of the liquid composition used for encapsulation was measured by Wick Bold Burning method according to ASTM B-2785, ASTM-C-758.
L
ii 16 Table 1 Example 1 7 Comparative SFP.,Amnl 1 ,Y Y U. Mold release Polymerizing time Surface hardness Cl content (ppm) in the liquid composition 0 5 hrs. 2 hrs.
4H 4H 3 hrs.
4H
X
8 hrs.
3H 2200 110 0 a 00 to a 9* 0 0 00 V a 0 0 0 0 go 69 90 00 WO 990* 9 0 S 09 o0* 09 9 o 99 The electronic part of the present invention which is t0 encapsulated with a specific polymer is substantially free from interference by chlorine in the encapsulating resin and has improved chemical resistance and high hardness.
The encapsulant of the present invention is used in electronic parts having the above-mentioned characteristics 5 and has a reduced curing time and improved mold release after curing.
The encapsulating method of the present invention using a cover liquid can produce S.n electronic part having a resin enclcsuer with a high surface hardness. The cover liquid Z0 having mold release property renders mold release very easy.
The encapsulating method of the present invention using an inest gas atmosphere having an oxygen concentration of up to 1% can produce an electronic part having a resin enclosure with a high surface hardness at a low cost because an inexpensive covering gas is available.
The claims form part of the disclosure of this specification.

Claims (1)

17- CI. 9* C 15 -4 A The claims defining the invention are as follows: 1. An electronic part wherein an electronic element (excluding light-emitting and receiving elements) is encapsulated with a polymer of a polymerizable liquid composition comprising a monomer or an oligomer or a mixture thereof of a bis(allyl carbonate) of an aliphatic, cycloaliphatic or aromatic dihydric alcohol having a general formula: CH 2 =CH-CH,-O-C-O -C H,-=CHC 0 0 n wherein R is a residue of a dihydric alcohol, and n has a value or an average value in the range of from 1 to 2. The electronic part according to claims 1 wherein said liquid composition contains chlorine in an amount of up to 50 ppm. 3. A method for encapsulating an electronic part, comprising placing an electronic element (excluding light- emitting and receiving elements) in a mold, casting an encapsulant into the mold, and polymerizing said encapsulant, wherein said encapsulant comprises polymer of a polymerizable liquid composition comprising a monomer or an oligomer or a mixture thereof of a bis(allyl carbonate) of an aliphatic, cycloaliphatic or aromatic dihydric alcohol having a general formula: N) i.) CVT mwspc#2818 91 11 6 i i 18 CH,=CHCHH,-0-C-0 R- 0-C-O H 2 -CH=CH, 0 0 n 0 0 n o o0 0 0 10 0 4 0 o i 6 o e o 0 0,P05 4 0446 wherein R is a residue of a dihydric alcohol, and n has a value or an average value in the range of from 1 to 4. The method for encapsulating an electronic part according to claim 3 wherein the polymerization of said encapsulant is carried out while keeping the surface of said encapsulant in contact with a liquid having a low solubility in said encapsulant and a lower density than said encapsulant to prevent the surface of said encapsulant from contacting with air. The method for encapsulating an electronic part according to claim 3 wherein the polymerization of said encapsulant is carried out while keeping the surface of said encapsulant in contact with an inert gas atmosphere having an oxygen concentration of up to 1% to prevent the surface of said encapsulant from contacting with air. 6. An electronic part according to any one of claims 1 to 2 substantially as hereinbefore described. 7. A method according to any one of claims 3 to substantially as hereinbefore described. DATED this 6 November 1991 CARTER SMITH BEADLE Fellows Institute of Patent Attorneys of Australia Patent Attorneys for the Applicant: MITSUI PETROCHEMICAL INDUSTRIES, LTD. o l mwspc#2818 91 11 6
AU32222/89A 1988-03-31 1989-03-29 Electronic parts, encapsulant for electronic parts, and encapsulating method Ceased AU619815B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-78916 1988-03-31
JP63078916A JPH02256261A (en) 1988-03-31 1988-03-31 Electronic part, electronic part sealing agent and sealing method

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AU619815B2 true AU619815B2 (en) 1992-02-06

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CN106634765A (en) * 2016-12-16 2017-05-10 深圳市华星光电技术有限公司 Black sealing compound and LCD (liquid crystal display) special-shaped screen, and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3903027A (en) * 1974-05-13 1975-09-02 Cpc International Inc Diallyl isophthalate encapsulating compositions and process for preparing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3903027A (en) * 1974-05-13 1975-09-02 Cpc International Inc Diallyl isophthalate encapsulating compositions and process for preparing the same

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