AU444944B2 - Photoelectric transducer element - Google Patents

Photoelectric transducer element

Info

Publication number
AU444944B2
AU444944B2 AU48592/72A AU4859272A AU444944B2 AU 444944 B2 AU444944 B2 AU 444944B2 AU 48592/72 A AU48592/72 A AU 48592/72A AU 4859272 A AU4859272 A AU 4859272A AU 444944 B2 AU444944 B2 AU 444944B2
Authority
AU
Australia
Prior art keywords
transducer element
photoelectric transducer
photoelectric
transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU48592/72A
Other languages
English (en)
Other versions
AU4859272A (en
Inventor
SHINJI FUJIWARA HIROYUKI SERISAWA and OSAMARU EGUCHI MASAKAZU FOHAI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP46089622A external-priority patent/JPS5037513B2/ja
Priority claimed from JP47003265A external-priority patent/JPS5120242B2/ja
Priority claimed from JP47096428A external-priority patent/JPS524404B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of AU444944B2 publication Critical patent/AU444944B2/en
Publication of AU4859272A publication Critical patent/AU4859272A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
AU48592/72A 1971-11-09 1972-11-07 Photoelectric transducer element Expired AU444944B2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP46089622A JPS5037513B2 (enrdf_load_stackoverflow) 1971-11-09 1971-11-09
JPJP89622/71 1971-11-09
JP47003265A JPS5120242B2 (enrdf_load_stackoverflow) 1971-12-29 1971-12-29
JPJP3265/72 1971-12-29
JP47096428A JPS524404B2 (enrdf_load_stackoverflow) 1972-09-25 1972-09-25
JPJP96428/72 1972-09-25

Publications (2)

Publication Number Publication Date
AU444944B2 true AU444944B2 (en) 1974-02-07
AU4859272A AU4859272A (en) 1974-02-07

Family

ID=27275729

Family Applications (1)

Application Number Title Priority Date Filing Date
AU48592/72A Expired AU444944B2 (en) 1971-11-09 1972-11-07 Photoelectric transducer element

Country Status (9)

Country Link
US (1) US3858074A (enrdf_load_stackoverflow)
AU (1) AU444944B2 (enrdf_load_stackoverflow)
BE (1) BE791077A (enrdf_load_stackoverflow)
CA (1) CA976265A (enrdf_load_stackoverflow)
DE (1) DE2254605C3 (enrdf_load_stackoverflow)
FR (1) FR2159364B1 (enrdf_load_stackoverflow)
GB (1) GB1393914A (enrdf_load_stackoverflow)
IT (1) IT984638B (enrdf_load_stackoverflow)
NL (1) NL159237B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985918A (en) * 1972-10-12 1976-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a target for an image pickup tube
GB1449956A (en) * 1973-03-30 1976-09-15 Matsushita Electric Industrial Co Ltd Photoconductor element
DE2436990A1 (de) * 1974-08-01 1976-02-12 Bosch Gmbh Robert Fotoleitertarget fuer fernsehaufnahmeroehren mit sperrenden kontakten
US4589192A (en) * 1984-11-02 1986-05-20 The United States Of America As Represented By The Secretary Of The Army Hybrid epitaxial growth process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE620887A (enrdf_load_stackoverflow) * 1959-06-18
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3268764A (en) * 1963-01-09 1966-08-23 Westinghouse Electric Corp Radiation sensitive device
US3405298A (en) * 1965-03-04 1968-10-08 Rca Corp Photoconductive device having a target including a selenium blocking layer
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials
US3571646A (en) * 1967-07-17 1971-03-23 Tokyo Shibaura Electric Co Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride
JPS5027326B1 (enrdf_load_stackoverflow) * 1970-04-22 1975-09-06

Also Published As

Publication number Publication date
FR2159364B1 (enrdf_load_stackoverflow) 1977-07-29
GB1393914A (en) 1975-05-14
DE2254605B2 (de) 1981-06-19
CA976265A (en) 1975-10-14
IT984638B (it) 1974-11-20
FR2159364A1 (enrdf_load_stackoverflow) 1973-06-22
NL159237B (nl) 1979-01-15
DE2254605C3 (de) 1982-04-15
US3858074A (en) 1974-12-31
AU4859272A (en) 1974-02-07
NL7215094A (enrdf_load_stackoverflow) 1973-05-11
DE2254605A1 (de) 1973-05-24
BE791077A (fr) 1973-03-01

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