AU2019255506B2 - Solar cells having junctions retracted from cleaved edges - Google Patents

Solar cells having junctions retracted from cleaved edges Download PDF

Info

Publication number
AU2019255506B2
AU2019255506B2 AU2019255506A AU2019255506A AU2019255506B2 AU 2019255506 B2 AU2019255506 B2 AU 2019255506B2 AU 2019255506 A AU2019255506 A AU 2019255506A AU 2019255506 A AU2019255506 A AU 2019255506A AU 2019255506 B2 AU2019255506 B2 AU 2019255506B2
Authority
AU
Australia
Prior art keywords
substrate
solar cell
emitter region
solar
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
AU2019255506A
Other languages
English (en)
Other versions
AU2019255506A1 (en
Inventor
David Jacob
Yafu LIN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maxeon Solar Pte Ltd
Original Assignee
Maxeon Solar Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maxeon Solar Pte Ltd filed Critical Maxeon Solar Pte Ltd
Publication of AU2019255506A1 publication Critical patent/AU2019255506A1/en
Assigned to Maxeon Solar Pte. Ltd. reassignment Maxeon Solar Pte. Ltd. Request for Assignment Assignors: SUNPOWER CORPORATION
Application granted granted Critical
Publication of AU2019255506B2 publication Critical patent/AU2019255506B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
AU2019255506A 2018-04-16 2019-04-11 Solar cells having junctions retracted from cleaved edges Active AU2019255506B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862658443P 2018-04-16 2018-04-16
US62/658,443 2018-04-16
PCT/US2019/027005 WO2019204119A1 (en) 2018-04-16 2019-04-11 Solar cells having junctions retracted from cleaved edges
US16/381,482 US11515441B2 (en) 2018-04-16 2019-04-11 Solar cells having junctions retracted from cleaved edges
US16/381,482 2019-04-11

Publications (2)

Publication Number Publication Date
AU2019255506A1 AU2019255506A1 (en) 2020-04-02
AU2019255506B2 true AU2019255506B2 (en) 2024-11-07

Family

ID=68161921

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2019255506A Active AU2019255506B2 (en) 2018-04-16 2019-04-11 Solar cells having junctions retracted from cleaved edges

Country Status (6)

Country Link
US (2) US11515441B2 (https=)
EP (1) EP3782206A4 (https=)
JP (2) JP2021520056A (https=)
CN (1) CN111448672B (https=)
AU (1) AU2019255506B2 (https=)
WO (1) WO2019204119A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI888529B (zh) 2020-04-09 2025-07-01 日商鐘化股份有限公司 太陽電池模組
US11764315B2 (en) 2020-09-16 2023-09-19 Maxeon Solar Pte. Ltd. Solar cell separation with edge coating
CN119836054A (zh) * 2024-12-27 2025-04-15 隆基绿能科技股份有限公司 一种太阳能电池、光伏组件和太阳能电池的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130153025A1 (en) * 2010-08-27 2013-06-20 Universität Konstanz Method for producing a solar cell having a textured front face and corresponding solar cell
WO2015183827A2 (en) * 2014-05-27 2015-12-03 Cogenra Solar, Inc. Shingled solar cell module
US20160133779A1 (en) * 2013-05-29 2016-05-12 Kaneka Corporation Method for manufacturing crystalline silicon-based solar cell and method for manufacturing crystalline silicon-based solar cell module

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
US6297126B1 (en) 1999-07-12 2001-10-02 Chartered Semiconductor Manufacturing Ltd. Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts
US6333457B1 (en) 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
CN101743640B (zh) * 2007-07-26 2012-12-19 康斯坦茨大学 具有回蚀刻发射极的硅太阳能电池的制造方法和相应的太阳能电池
KR20090091562A (ko) * 2008-02-25 2009-08-28 엘지전자 주식회사 태양전지 및 그 제조방법
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
KR101139458B1 (ko) * 2009-06-18 2012-04-30 엘지전자 주식회사 태양전지 및 그 제조방법
KR101032624B1 (ko) * 2009-06-22 2011-05-06 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101130197B1 (ko) * 2009-09-28 2012-03-30 엘지전자 주식회사 태양전지 모듈 및 그 제조 방법
KR20120026813A (ko) * 2010-09-10 2012-03-20 삼성전기주식회사 도전성 전극 구조물의 형성 방법 및 이를 포함하는 태양 전지의 제조 방법, 그리고 상기 태양 전지의 제조 방법에 의해 제조된 태양 전지
KR101699300B1 (ko) * 2010-09-27 2017-01-24 엘지전자 주식회사 태양전지 및 이의 제조 방법
US8859322B2 (en) * 2012-03-19 2014-10-14 Rec Solar Pte. Ltd. Cell and module processing of semiconductor wafers for back-contacted solar photovoltaic module
KR101381844B1 (ko) * 2012-04-24 2014-04-24 에스티엑스 솔라주식회사 양면형 태양전지 제조방법
DE112012006278T5 (de) * 2012-04-25 2015-03-05 Mitsubishi Electric Corporation Solarzelle, Verfahren zur Herstellung einer Solarzelle und Solarzellenmodul
US20140238478A1 (en) * 2013-02-28 2014-08-28 Suniva, Inc. Back junction solar cell with enhanced emitter layer
CN103258881B (zh) * 2013-05-07 2015-11-11 宁波山迪光能技术有限公司 薄膜太阳能电池板及其制备方法
EP4105858A1 (en) 2014-05-27 2022-12-21 Maxeon Solar Pte. Ltd. Shingled solar cell module
US20150380581A1 (en) * 2014-06-27 2015-12-31 Michael C. Johnson Passivation of light-receiving surfaces of solar cells with crystalline silicon
KR102366935B1 (ko) * 2014-08-07 2022-02-23 엘지전자 주식회사 태양 전지 및 이를 포함하는 태양 전지 모듈
US20160284917A1 (en) * 2015-03-27 2016-09-29 Seung Bum Rim Passivation Layer for Solar Cells
JP2016213284A (ja) * 2015-05-01 2016-12-15 東洋アルミニウム株式会社 Ｐｅｒｃ型太陽電池用アルミニウムペースト組成物
KR101846445B1 (ko) * 2016-10-13 2018-04-06 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130153025A1 (en) * 2010-08-27 2013-06-20 Universität Konstanz Method for producing a solar cell having a textured front face and corresponding solar cell
US20160133779A1 (en) * 2013-05-29 2016-05-12 Kaneka Corporation Method for manufacturing crystalline silicon-based solar cell and method for manufacturing crystalline silicon-based solar cell module
WO2015183827A2 (en) * 2014-05-27 2015-12-03 Cogenra Solar, Inc. Shingled solar cell module

Also Published As

Publication number Publication date
EP3782206A1 (en) 2021-02-24
US20190319144A1 (en) 2019-10-17
JP2024109947A (ja) 2024-08-14
US20230044021A1 (en) 2023-02-09
EP3782206A4 (en) 2021-05-19
CN111448672B (zh) 2025-01-14
JP2021520056A (ja) 2021-08-12
CN111448672A (zh) 2020-07-24
US11515441B2 (en) 2022-11-29
WO2019204119A1 (en) 2019-10-24
AU2019255506A1 (en) 2020-04-02

Similar Documents

Publication Publication Date Title
US7759158B2 (en) Scalable photovoltaic cell and solar panel manufacturing with improved wiring
US10230011B2 (en) Shingled array solar cells and method of manufacturing solar modules including the same
EP2911206B1 (en) Solar cell module and method for manufacturing the same
US7498508B2 (en) High voltage solar cell and solar cell module
US20140124013A1 (en) High efficiency configuration for solar cell string
EP2917940B1 (en) High efficiency configuration for solar cell string
US20230044021A1 (en) Solar cells having junctions retracted from cleaved edges
US12183840B2 (en) Solar cell and solar cell module
EP2323168A1 (en) Integrated thin film solar cell
WO2024083174A1 (en) Anti-shading photovoltaic cell assembly and assembling method of the same
US20210126153A1 (en) Busbar-less shingled array solar cells and methods of manufacturing solar modules
US20210313479A1 (en) High Power Density Solar Module and Methods of Fabrication
HK40108781A (en) High efficiency configuration for solar cell string
KR20150062792A (ko) 태양 전지 모듈 및 태양 전지

Legal Events

Date Code Title Description
PC1 Assignment before grant (sect. 113)

Owner name: MAXEON SOLAR PTE. LTD.

Free format text: FORMER APPLICANT(S): SUNPOWER CORPORATION

FGA Letters patent sealed or granted (standard patent)