AU2019101739A4 - Photocell irradiation sensor - Google Patents
Photocell irradiation sensor Download PDFInfo
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- AU2019101739A4 AU2019101739A4 AU2019101739A AU2019101739A AU2019101739A4 AU 2019101739 A4 AU2019101739 A4 AU 2019101739A4 AU 2019101739 A AU2019101739 A AU 2019101739A AU 2019101739 A AU2019101739 A AU 2019101739A AU 2019101739 A4 AU2019101739 A4 AU 2019101739A4
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- 238000005070 sampling Methods 0.000 claims abstract description 60
- 238000004146 energy storage Methods 0.000 claims abstract description 33
- 238000004891 communication Methods 0.000 claims abstract description 31
- 238000005259 measurement Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 229910052710 silicon Inorganic materials 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 52
- 239000003990 capacitor Substances 0.000 claims description 22
- QVFWZNCVPCJQOP-UHFFFAOYSA-N chloralodol Chemical compound CC(O)(C)CC(C)OC(O)C(Cl)(Cl)Cl QVFWZNCVPCJQOP-UHFFFAOYSA-N 0.000 claims description 18
- 230000001105 regulatory effect Effects 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 9
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 abstract description 15
- 230000005855 radiation Effects 0.000 description 17
- 230000006870 function Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 230000000875 corresponding effect Effects 0.000 description 10
- 238000010248 power generation Methods 0.000 description 9
- 238000012544 monitoring process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004590 computer program Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZCJJIQHVZCFSGZ-UHFFFAOYSA-N 2,8-bis(diphenylphosphoryl)dibenzothiophene Chemical class C=1C=CC=CC=1P(C=1C=C2C3=CC(=CC=C3SC2=CC=1)P(=O)(C=1C=CC=CC=1)C=1C=CC=CC=1)(=O)C1=CC=CC=C1 ZCJJIQHVZCFSGZ-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G08—SIGNALLING
- G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
- G08C17/00—Arrangements for transmitting signals characterised by the use of a wireless electrical link
- G08C17/02—Arrangements for transmitting signals characterised by the use of a wireless electrical link using a radio link
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The disclosure discloses a photocell irradiation sensor, including: a photocell selection
circuit, a master chip electrically connected to the photocell selection circuit, an
irradiation sampling circuit electrically connected to the master chip, a maximum power
tracking circuit, an energy storage circuit, and wireless communication module; the
maximum power tracking circuit is also electrically connected with the energy storage
circuit. The master chip controls the photocell selection circuit to turn on or off the
connection between the photocell and the subsequent circuit according to the "irradiation
detection" or "power supply" function to be realized. When the master chip selects the
powerr supply" function, the master chip controls the maximum power tracking circuit to
enable the photocell to work at the maximum power point to output electrical energy, and
the electrical energy is stored through the energy storage circuit, so as to facilitate power
supply for each chip; when the master chip selects the "irradiation detection" function,
the irradiation sampling circuit transmits the irradiation signal to the master chip for
measurement; the wireless communication module sends the measured irradiation value
through wireless communication.
21
Description
[0001] The disclosure relates to the field of photovoltaics, and more particularly, to a photocell irradiation sensor.
[0002] The power generation amount of the solar photovoltaic power generation system is affected by factors such as the local solar radiation, the temperature, the solar panel performance, etc., wherein the solar radiation intensity directly affects the amount of power generation, the greater the radiation intensitythe greater the power , the greater the power generation amount.
[00031 The detection of radiation intensity generally uses an irradiation sensor. The current irradiation sensor needs to transmit the irradiation value through a wired interface, which causes certain difficulties in the installation and wiring of the irradiation sensor in the photovoltaic power generation system. In addition, the use of existing radiation sensors is difficult to maintain and cannot meet the need for continuous and comprehensive monitoring. Therefore, the use of the current radiation sensor has the problems of inconvenient installation, wiring, and maintenance difficulties.
[0004] To solve at least one of the above technical problems, the present disclosure provides a flexible deployment, maintenance-free photocell irradiation sensor, which can meet the need for continuous and comprehensive monitoring of irradiation in the current intelligent photovoltaic power generation system. Specifically, the technical solution of the present disclosure is as follows:
[0005] A photocell irradiation sensor provided by the present disclosure includes:
[00061 A photocell selection circuit, a master chip electrically connected to the photocell selection circuit, an irradiation sampling circuit electrically connected to the master chip, a maximum power tracking circuit, an energy storage circuit, and a wireless communication module; the maximum power tracking circuit is also electrically connected to the energy storage circuit; wherein:
[00071 When the master chip controls the photocell selection circuit to select to connect with the irradiation sampling circuit, the irradiation sampling circuit obtains the short circuit current of the photocell and transmits the short circuit current to the master chip; the master chip calculates an irradiation value of the photocell based on the short circuit current, and sends the irradiation value of the photocell through the wireless communication module.
[00081 when the master chip controls the photocell selection circuit to select to connect with the maximum power tracking circuit, the maximum power tracking circuit enables the photocell work at the maximum power point to output the electrical energy under the control of the drive control signal of the master chip, and the electrical energy is stored through the energy storage circuit, so as to facilitate power supply for each chip; the maximum power tracking circuit also collects a charging current and feeds back to the master chip after processing the charging current, so that the master chip adjusts the drive control signal to control the maximum power tracking circuit.
[0009] Preferably, the photocell selection circuit includes: a silicon photocell and a changeover switch electrically connected to the silicon photocell; the changeover switch inputs an output current of the silicon photocell to the irradiation sampling circuit or the maximum power tracking circuit based on a channel selection of the master chip.
[0010] Preferably, the irradiation sampling circuit includes: an operational amplifier, a short circuit current sampling resistor; a non-inverting input of the operational amplifier inputs a positive current of the silicon photocell, and the non-inverting input of the operational amplifier is grounded; an inverting input of the operational amplifier inputs a negative current of the silicon photocell; the short circuit current sampling resistor is connected in parallel between the inverting input and an output of the operational amplifier; the output of the operational amplifier inputs the outputted short circuit current to the master chip.
[0011] Preferably, the maximum power tracking circuit includes: a drive sub-circuit, a maximum power main circuit and a sampling sub-circuit; wherein the drive sub-circuit drives the maximum power main circuit to work at the maximum power point to output the electrical energy in the silicon photocell according to a PWM drive signal sent by the master chip, and the energy is stored through the energy storage circuit; the sampling sub-circuit performs sampling a charging current, and amplifies the sampled charging current to feed back to the main control chip.
[0012] Preferably, the drive sub-circuit includes a drive transistor, and the PWM drive control signal of the master chip is inputted to a base of the drive transistor through a resistor, a emitter of the drive transistor is grounded; a collector of the drive transistor is electrically connected to the maximum power main circuit to drive the maximum power main circuit.
[0013] The maximum power main circuit includes a circuit switch, a filter capacitor, a filter inductor, and a freewheel diode; wherein, a base of the circuit switch is electrically connected to the collector of the drive transistor, and an emitter of the circuit switch is electrically connected to a positive terminal of the silicon photocell through the changeover switch, and the emitter and the base of the circuit switch are electrically connected through a resistor; a collector of the circuit switch is electrically connected to the filter inductor, the other end of the filter inductor is electrically connected to the energy storage circuit; one end of the filter capacitor is electrically connected to the emitter of the circuit switch, and the other end of the filter capacitor is connected to the input of the freewheel diode, the input of the freewheel diode is electrically connected to the negative terminal of the silicon photocell through the changeover switch, and the output of the freewheel diode is electrically connected to the collector of the circuit switch.
[0014] The sampling sub-circuit includes a charging current sampling resistor and an operational amplifier; one end of the charging current sampling resistor is electrically connected to the negative terminal of the silicon photocell and the input of the freewheel diode; the other end of the charging current sampling resistor is grounded; the non-inverting input of the operational amplifier is electrically connected to the input of the freewheel diode through a bias resistor, and the other end of the bias resistor is grounded through a capacitor; the inverting input of the operational amplifier is grounded through an amplification resistor, the inverting input and the output of the operational amplifier are electrically connected through another amplification resistor, and the output of the operational amplifier as a charging current measurement point is electrically connected to the master chip.
[0015] Preferably, the energy storage circuit includes a farad capacitor and a regulated power supply chip; the positive terminal of the farad capacitor is electrically connected to the filter inductor, the negative terminal of the farad capacitor is grounded; the input of the regulated power supply chip is electrically connected to the filter inductor, and the output of the regulated power supply chip is used as a power supply output to supply power to each chip.
[0016] Preferably, the wireless communication module uses LORA communication to perform wireless communication.
[00171 Preferably, the wireless communication module comprises a LORA chip SX1276.
[0018] Preferably, the master chip is a STM32L series single-chip microcomputer.
[0019] Preferably, the master chip is a single chip microcomputer STM32L151.
[0020] The present disclosure includes at least one of the following technical effects:
[0021] (1) The photocell irradiation sensor of the present disclosure is simple to install and does not require operation and maintenance. The photocell (such as a silicon photocell) can be used as both a detection component and a power supply component. The design of two in one fully exploits the potential of the silicon photocell device. The circuit cooperates to make the irradiation sensor of this solution have the ability of self-power supply, can operate as an independent individual for a long time (can work in the field for a long time), and can be networked with other sensors to to form a sensor network to comprehensively monitor the irradiation of photovoltaic power plants and power generation.
[0022] (2) The photocell irradiation sensor of the present disclosure uses a wireless communication module to transmit the detected irradiation value. Therefore, the photocell irradiation sensor can be flexibly deployed to solve the problem of inconvenient installation and wiring. Further, the wireless transmission module can use a LoRa chip for wireless transmission. Due to the ultra-low power consumption of LoRa, in particular, silicon photocells are very advantageous for solar radiation detection. At the same time, LoRa wireless transmission can arbitrarily deploy the radiation sensor of this solution flexibly, which is particularly beneficial to the application scenarios of double-sided photovoltaic modules that require multi-point irradiation monitoring.
[0023] In order to more clearly explain the technical solutions in the embodiments of the present disclosure, the drawings required in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure. Those skilled in the art can obtain other drawings based on these drawings without paying any creative labor.
[0024] FIG. 1 is a circuit connection block diagram illustrating of an embodiment of a photocell irradiation sensor according to the present disclosure;
[0025] FIG. 2 is a circuit connection block diagram illustrating another embodiment of the photocell irradiation sensor according to the present disclosure;
[0026] FIG. 3 is a circuit connection block diagram illustrating of another embodiment of the photocell irradiation sensor according to the present disclosure;
[00271 FIG. 4 is a circuit connection diagram illustrating another embodiment of the photocell irradiation sensor according to the present disclosure;
[0028] FIG. 5 is a schematic diagram illustrating connection of pins of the master chip in another embodiment of the photocell irradiation sensor according to the present disclosure.
[00291 In the following description, for the purpose of illustration rather than limitation, specific details such as specific system structures and technologies are proposed to thoroughly understand the embodiments of the present application. However, those skilled in the art should understand that the present application can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary details.
[00301 It should be understood that when used in this specification and the appended claims, the term "comprising" indicates the presence of described features, integers, steps, operations, elements, and/or components, but does not exclude one or more other presence or addition of features, integers, steps, operations, elements, components, and/or assemblies.
[0031] In order to make the drawings simple, the figures only show the parts related to the present disclosure, they do not represent the actual structure of the product. In addition, in order to make the drawing concise and easy to understand, in some drawings, components having the same structure or function are only schematically drawn, or only one of them is marked. Herein, "one" not only means "only this one", but also can mean "more than one".
[0032] It should also be further understood that the term "and/or" used in the specification of the present application and the appended claims refers to any and all possible combinations of one or more of the associated listed items and includes these combinations.
[00331 In order to more clearly explain the embodiments of the present disclosure or the technical solutions in the prior art, the specific embodiments of the present disclosure will be described below with reference to the drawings. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those skilled in the art, without paying any creative labor, other drawings can also be obtained from these drawings and obtained other implementations.
[0034] An embodiment of a photocell irradiation sensor provided by the present disclosure is shown in FIG. 1 and includes:
[00351 A photocell selection circuit 10, a master chip 20 electrically connected to the photocell selection circuit 10, and an irradiation sampling circuit 30 electrically connected to the master chip 20, a maximum power tracking circuit 40, an energy storage circuit 50, and a wireless communication module 60; the maximum power tracking circuit 40 is also electrically connected to the energy storage circuit 50; wherein:
[0036] When the master chip 20 controls the photocell selection circuit 10 to select to connect with the irradiation sampling circuit 30, the irradiation sampling circuit 30 obtains the short circuit current of the photocell and transmits the short circuit current to the master chip 30; the master chip 20 calculates an irradiation value of the photocell based on the short circuit current, and sends the irradiation value of the photocell through the wireless communication module 60.
[00371 When the master chip 20 controls the photocell selection circuit 10 to select to connect with the maximum power tracking circuit 40, the maximum power tracking circuit 40 enables the photocell work to output the electrical energy at at the position of a maximum power point under the control of the drive control signal of the master chip 20, and the electrical energy is stored through the energy storage circuit 50, so as to facilitate power supply for each chip; the maximum power tracking circuit 40 also collects a charging current and feeds back to the master chip 20 after processing the charging current, so that the master chip 20 adjusts the drive control signal to control the maximum power tracking circuit 40.
[00381 The photocells, also called solar cells, directly convert sunlight into electricity. Therefore, the characteristic of the photocell is that it can convert a large amount of light energy absorbed by the earth from solar radiation into electrical energy. It is a semiconductor element that generates electromotive force under the irradiation of light. There are many types of photocells, commonly used are selenium photocells, silicon photocells, and thallium sulfide, silver sulfide photocells.
[00391 In the embodiment, the photocell selection circuit 10 is used to provide the photocell current; and whether the photocell current is supplied to the maximum power tracking circuit 40 or the irradiation sampling circuit 30 is controlled according to the selection of the master chip 20. Specifically, if it is desired to realize the function of irradiation detection through the photocell irradiation sensor, then the master chip 20 controls the photocell selection circuit 10 and the irradiation sampling circuit 30 to be turned on, then the photocell selection circuit 10 converts the current of the photocell the irradiation sampling circuit 30, and then the irradiation sampling circuit 30 obtains the short circuit current of the photocell, and calculates the corresponding irradiation value through the master chip 20 (the short circuit current is proportional to the irradiation, and the irradiation value can be obtained according to the corresponding relationship), and finally the calculated irradiation value can be transmitted through the wireless communication module 60, and transmitting the irradiation value through the wireless communication module 60 can make the photocell irradiation sensor of this solution arbitrarily deployed flexibly, especially beneficial for the application scenarios of double-sided photovoltaic modules that require multi-point irradiation monitoring; if you work in the field, you can choose to self-power through the photocell in the gap of the radiation detection. Specifically, the master chip 20 controls the photocell selection circuit 10 to turn off with the irradiation sampling circuit 30, and the maximum power tracking circuit 40 is selected to be turned on. In this way, the maximum power tracking circuit 40 enables the photocell to work at the maximum power point under the control of the drive control signal of the master chip 20, the electrical energy is stored through the energy storage circuit 50, so as to facilitate power supply for each chip.
[0040] In the embodiment, on the one hand, the wireless communication module transmits the irradiation value through wireless communication, so that the irradiation sensor of this solution can be flexibly deployed, especially for the application of double-sided photovoltaic modules that require multi-point irradiation monitoring. On the other hand, the photocell is both a detection component and a power supply component. The two-in-one design fully exploits the potential of the photocell device and works in conjunction with the corresponding circuit, so that the radiation sensor of this solution has self-power supply capability and can work in the field for a long time.
[0041] In another embodiment of the present disclosure, based on the foregoing embodiment, the photocell selection circuit 10, as shown in FIG. 2, includes: a silicon photocell 11 and a changeover switch K1 electrically connected to the silicon photocell 11; the changeover switch K1 inputs the output current of the silicon photocell 11 to the irradiation sampling circuit 30 or the maximum power tracking circuit 40 according to the channel selection of the master chip 20.
[0042] The silicon photocell 11 is generally installed on the upper surface of the irradiation sensor, and the front face is directed toward the sun to receive sunlight. The silicon photocell 11 is connected to the changeover switch KI, and the master chip 20 controls the changeover switch K1 to turn on or off the connection between the silicon photocell 11 and the subsequent circuit according to the "detection" or "power supply" function to be implemented. That is to say, the master chip 20 realizes the radiation detection or power supply function according to the current needs, and guides the silicon photocell 11 to the corresponding circuit through the changeover switch KI, and is connected to the radiation sampling circuit 30 when measuring the radiation, and is connected to the maximum power tracking circuit 40 when the power is supplied. Preferably, the changeover switch K1 can select the DPDT analog switch MAX20327.
[00431 The maximum power tracking circuit 40, as shown in FIG. 3, includes: a drive sub-circuit 41, a maximum power main circuit 42 and a sampling sub-circuit 43; wherein: the drive sub-circuit 41 drives the maximum power main circuit 42 to work at the maximum power point to output the electrical energy in the silicon photocell 11 according to a PWM drive signal sent by the master chip 20, and the energy is stored through the energy storage circuit 50. In other words, the drive sub-circuit 41 drives the maximum power main circuit 42 to work according to the PWM drive signal sent by the single chip microcomputer 20; the maximum-power main circuit makes the silicon photocell 11 work at the maximum power according to the drive signal of the drive sub-circuit, and convert the solar power acquired by the silicon photocell 11 into direct current to charge the energy storage circuit 50; the sampling sub-circuit 43 samples the charging current and amplifies the sampled charging current and feeds it back to the master chip 20.
[0044] The maximum power tracking circuit 40 works in conjunction with the master chip 20, which is equivalent to a Maximum Power Point Tracking (MPPT) controller, which can detect the generated voltage of the solar panel in real time and track the highest voltage and current value (VI), allowing the system to charge the energy storage device with maximum power output. The output power of the photocell is related to the working voltage of the MPPT controller. Only when working at the most suitable voltage, its output power will have a unique maximum value. The MPPT controller will track the maximum power point in the solar panel in real time to exert the maximum efficiency of the solar panel. Through maximum power tracking, more power can be output, thereby improving charging efficiency. Theoretically, the solar power generation system using MPPT controller will increase the efficiency by 50% compared with the traditional one.
[0045] The maximum power tracking circuit 40 detects the DC voltage and output current of the main loop, and then calculates the output power of the silicon photocell 11 through the master chip 20, and realizes the tracking of the maximum power point. The master chip 20 changes the current by changing the duty ratio of the drive signal, so that the disturbance of the current is generated. At the same time, the output current and voltage of the photocell will also change accordingly. By measuring the change of the output power and voltage of the photocell before and after the disturbance, the direction of the disturbance in the next cycle is determined. When the disturbance direction is correct, the output power of the silicon photocell 11 increases. Disturbance is continued in the same direction in the next cycle, otherwise, disturbance is in the opposite direction, so the disturbance and observation are repeated to make the output of the silicon photocell 11 reach the maximum power point.
[00461 The irradiation sampling circuit 30, as shown in FIG. 4, includes: an operational amplifier M1, a short circuit current sampling resistor Ra; the non-inverting input of the operational amplifier M1 inputs the positive current of the silicon photocell 11, and the non-inverting input of the operational amplifier M1 is grounded; the inverting input of the operational amplifier M1 inputs the negative current of the silicon photocell 11; the short circuit current sampling resistor Ra is connected in parallel between the inverting input and the output of the operational amplifier M1; the output of the operational amplifier M1 inputs the outputted short circuit current to the master chip 20.
[00471 The circuit connection between the operational amplifier M Iand the silicon photocell 11 can bring out the short circuit current of the silicon photocell 11, the short circuit current flows through the short circuit current sampling resistor Ra, and an output voltage proportional to the short circuit current is obtained at the short circuit current output point D. The master chip 20 obtains the voltage value through AD sampling, the short circuit currentis calculated, and the short circuit current is proportional to the irradiation, and then the irradiation value is obtained according to the corresponding relationship. Then, the master chip 20 transmits the calculated irradiation value through the wireless communication module 60.
[00481 Preferably, the maximum power tracking circuit 40 is specifically shown in FIG. 4, wherein the drive sub-circuit includes a drive transistor Si, and the PWM drive control signal (P point input) of the master chip 20 is inputted the base of the drive transistor Si through a resistor RI and the emitter of the drive transistor S is grounded; the collector of the drive transistor Si is electrically connected to the maximum power main circuit to drive the maximum power main circuit.
[0049] The maximum power main circuit includes a circuit switch S2, a filter capacitor C1, a filter inductor LI, and a freewheel diode Qi; wherein the base of the circuit switch S2 is electrically connected to the collector of the drive transistor Si, the emitter of the circuit switch S2 is electrically connected to the positive terminal of the silicon battery IIthrough the changeover switch Ki, and the emitter and base of the circuit switch S2 are electrically connected through a resistor R2; The collector of the circuit switch S2 is electrically connected to the filter inductor LI, and the other end of the filter inductor LI is electrically connected to the energy storage circuit 50; one end of the filter capacitor Ci is electrically connected to the emitter of the circuit switch S2, the other end of the filter capacitor Ci is electrically connected to the input of the freewheel diode Qi, and the input of the freewheel diode Qi is electrically connected to the negative terminal of the silicon photocell 11 through the changeover switch K1 , the output of the freewheel diode Qi is electrically connected to the collector of the circuit switch S2.
[0050] The sampling sub-circuit includes a charging current sampling resistor Rb and an operational amplifier M2; one end of the charging current sampling resistor Rb is electrically connected to the negative terminal of the silicon photocell I Iand the input of the freewheel diode Q1; the other end of the charging current sampling resistor Rb is grounded; the non-inverting input of the operational amplifier M2 is electrically connected to the input of the freewheel diode Qi through a bias resistor R3, and the other end of the bias resistor R3 is grounded through a capacitor C3; the inverting input of the operational amplifier M2 is grounded through an amplification resistor R4, the inverting input and the output of the operational amplifier M2 are electrically connected through another amplification resistor R5, and The output of the operational amplifier M2 is electrically connected to the master chip 20 as a charging current measurement point F.
[0051] The energy storage circuit 50 includes a farad capacitor Cf and a regulated power supply chip LDO; the positive terminal of the farad capacitor Cf is electrically connected to the filter inductor LI, the negative terminal of the farad capacitor Cf is grounded; the input end of the regulated power supply chip LDO is electrically connected to the filter inductor LI, and the output of the regulated power supply chip LDO serves as a power supply output end to supply power to each chip.
[0052] In the embodiment, in order to enable the silicon photocell 11 to work at the maximum power point to maximize the output of electrical energy. The maximum power tracking circuit is a DC to DC conversion circuit. The master chip 20 measures the charging current at point F (point F is the charging current measurement point) while adjusting the PWM duty ratio input at point P, and according to the magnitude of the charging current, the adjustment direction of the PWM duty ratio of the drive signal input at point P (PWM drive control signal input point) is determined. If the current becomes larger, continue to adjust, if it becomes smaller, adjust in the opposite direction, forming a closed loop control to maximize the charging current and power. The charging current is sampled by the charging current sampling resistor Rb and amplified by the operational amplifier M2, and the output of the operational amplifier is connected to the AD interface of the master chip 20 to obtain the charging current value by AD sampling. The stable voltage output of the LDO power chip supplies power to the master chip 20 and the operational amplifier.
[00531 Preferably, the wireless communication module 60 uses the LORA communication method to perform wireless communication. Through wireless communication based on LoRa spread spectrum, the MCU (master control chip) transmits the irradiation data. Further, the wireless communication module 60 includes a LORA chip 20SX1276, and the RF frequency can be set according to the frequency allowed in different countries of the world. Due to the ultra-low power consumption of LoRa, the silicon photocell 11 is advantageous for solar radiation detection. LoRa wireless transmission can arbitrarily deploy the radiation sensor of this solution flexibly, especially for the application scenarios of double-sided photovoltaic modules that require multi-point radiation monitoring.
[0054] In the above embodiment, the irradiation sampling circuit 30 is electrically connected to the master chip 20, and transmits the irradiation signal to the master chip 20 for measurement; the LoRa chip is electrically connected to the master chip 20, and the irradiation value is sent by the master chip 20 through LoRa. The maximum power tracking circuit 40 is electrically connected to the energy storage circuit 50, and the energy storage circuit 50 supplies power to other components. The maximum power tracking circuit 40 is electrically connected to the energy storage circuit 50, the electrical energy is stored through the energy storage circuit 50, and the energy storage circuit 50 supplies power to other components.
[0055] The master chip 20 in any of the above embodiments may use the STM32L series of single chip microcomputers. Preferably, the master chip 20 implements the entire detection, control and communication functions, and the STM32L series ultra-low power single chip microcomputer STM32L51 based on the ARM Cortex-M3 core is used, which is suitable for battery-powered applications. The schematic diagram of its connection with each circuit is shown in FIG. 5.:
[0056] (1) Regarding the electrical connection between the master chip and the wireless communication module: the master chip STM32L51 and the LoRa chip SX1276 are electrically connected through corresponding pins. The specific connection pins are shown in FIG. 5, which will not be repeated here.
[00571 (2) Regarding the electrical connection between the master chip and the irradiation sampling circuit: the pin ADO of the master chip STM32L151 is electrically connected to the short circuit current measurement point D at the output of the irradiation sampling circuit for receiving the short circuit current of the photocell collected by the irradiation sampling circuit, so as to obtain the irradiation value through corresponding calculation, and send the irradiation value through LoRa chip SX1276.
[0058] (3) Regarding the electrical connection between the master chip and the maximum power tracking circuit: the pin AD1 of the master chip STM32L151 is electrically connected to the charging current measurement point F of the maximum power tracking circuit to receive the charging current fed back by the maximum power tracking circuit. Therefore, the master chip STM32L151 adjusts the PWM drive control signal of the maximum power tracking circuit according to the feedback charging current, so that the maximum power tracking circuit is at the maximum power position to output the electrical energy, and the electrical energy is stored through the energy storage circuit, which can supply power to each chip component. The pin TIM2_CH1 of the master chip STM32L151 is electrically connected to the PWM drive input point P of the maximum power tracking circuit, and is used to input the PWM drive control signal to the maximum power tracking circuit. By adjusting the duty cycle of the PWM drive, the photocell is operated at the maximum power point to maximize the output of the electrical energy.
[0059] (4) Regarding the electrical connection between the master chip and the photocell selection circuit: the pin GPIO of the master chip STM32L151 is electrically connected to the channel selection input point T of the changeover switch in the photocell selection circuit, and after the changeover switch receives the channel selection signal of the master chip STM32L151, the photocell is switched to the corresponding circuit to complete the corresponding "irradiation detection" or "power supply" function.
[0060] (5) Regarding the electrical connection between the master chip and the energy storage circuit, not shown in FIG. 5, the photocell irradiation sensor of the present disclosure can realize the long-term field work because it has a self-powered function. The electrical energy stored in the energy storage circuit can supply power to each chip component, and the power input pin of the master chip STM32L151 can be electrically connected to the energy storage circuit to obtain corresponding electrical energy.
[0061] In the photocell irradiation sensor in the embodiment, if the photocell uses a silicon photocell, the silicon photocell irradiation sensor has a LoRa wireless transmission function, an irradiation detection function, and a self-powered function. Data is transmitted based on the wireless communication method, which solves the problem of inconvenient installation and wiring. In order to avoid maintenance and realize the ability to self-power and store electrical energy, the working mechanism of the silicon photocell as a "detection" element and as a "power supply" element is designed into one, and the two functions are switched by a changeover switch. Since the short circuit current of silicon photocells is positively correlated with irradiation, an "irradiation sampling circuit" is designed. This circuit obtains the short circuit current of silicon photocells, the short circuit current is amplified and is sent to the master chip for sampling to calculate the irradiation value. In the sampling gap, the silicon photocell works as a power supply element, and a "maximum power tracking circuit" is designed, which can maximize the power generation capability of the silicon photocell to provide as much power as possible. "Farad capacitor Cf" stores the electrical energy generated by the silicon photocell and supplies power to other chips after being stabilized by the regulated power supply chip LDO. Since LoRa has the characteristics of low power consumption, the master chip also operates at low power consumption, and the entire system power consumption will also be relatively low, the master chip as the control core controls to achieve the above functions.
[0062] The present disclosure is described with reference to flowcharts and/or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present disclosure. It should be understood that each flow and/or block in the flowchart and/or block diagram and a combination of the flow and/or block in the flowchart and/or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, special-purpose computer, embedded processing machine, or other programmable data processing device to produce a machine, that enables the instructions to be implemented by the execution of the processor of the computer or other programmable data processing device, realizing the functions specified in one block/several blocks of the flowcharts or specified functions in one/several blocks.
[00631 These computer program instructions may also be stored in a computer readable memory that can guide a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture including an instruction device, the instruction device realizes the function specified in one flow or multiple flows in the flowchart and/or one block or multiple blocks in block diagram.
[0064] These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operating steps are performed on the computer or other programmable device to produce computer-implemented processing, the instructions executed on the computer or other programmable device thus provide the steps for implementing the functions specified in one flow or multiple flows in the flowchart and/or one block or multiple blocks in block diagram.
[0065] Although the preferred embodiments of the present disclosure have been described, those skilled in the art can make additional changes and modifications to these embodiments once they learn the basic inventive concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present disclosure.
[0066] Obviously, those skilled in the art can make various modifications and variations to the present disclosure without departing from the spirit and scope of the present disclosure. In this way, if these modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and equivalent technologies thereof, the present disclosure is also intended to include these modifications and variations.
Claims (10)
- What is claimed is: 1. A photocell irradiation sensor, comprising:a photocell selection circuit, a master chip electrically connected to the photocellselection circuit, an irradiation sampling circuit electrically connected to the master chip,a maximum power tracking circuit, an energy storage circuit, and a wirelesscommunication module; the maximum power tracking circuit is also electricallyconnected to the energy storage circuit; wherein:when the master chip controls the photocell selection circuit to select to connectwith the irradiation sampling circuit, the irradiation sampling circuit obtains the shortcircuit current of the photocell and transmits the short circuit current to the master chip;the master chip calculates an irradiation value of the photocell based on the short circuitcurrent, and sends the irradiation value of the photocell through the wirelesscommunication module;when the master chip controls the photocell selection circuit to select to connectwith the maximum power tracking circuit, the maximum power tracking circuit enablesthe photocell work at a maximum power point to output the electrical energy under thecontrol of the drive control signal of the master chip, and the electrical energy is storedthrough the energy storage circuit, so as to facilitate power supply for each chip; themaximum power tracking circuit also collects a charging current and feeds back to themaster chip after processing the charging current, so that the master chip adjusts the drivecontrol signal to control the maximum power tracking circuit.
- 2. The photocell irradiation sensor according to claim 1, wherein the photocellselection circuit comprises: a silicon photocell and a changeover switch electricallyconnected to the silicon photocell; the changeover switch inputs an output current of thesilicon photocell to the irradiation sampling circuit or the maximum power trackingcircuit based on a channel selection of the master chip.
- 3. The photocell irradiation sensor according to claim 2, wherein the irradiationsampling circuit comprises: an operational amplifier, a short circuit current samplingresistor; a non-inverting input of the operational amplifier inputs a positive current of thesilicon photocell, and the non-inverting input of the operational amplifier is grounded; aninverting input of the operational amplifier inputs a negative current of the siliconphotocell; the short circuit current sampling resistor is connected in parallel between theinverting input and an output of the operational amplifier; the output of the operationalamplifier inputs the outputted short circuit current to the master chip.
- 4. The photocell irradiation sensor according to claim 2, wherein the maximumpower tracking circuit comprises: a drive sub-circuit, a maximum power main circuit anda sampling sub-circuit; wherein:the drive sub-circuit drives the maximum power main circuit to work at themaximum power point to output the electrical energy in the silicon photocell according toa PWM drive signal sent by the master chip, and the energy is stored through the energystorage circuit; the sampling sub-circuit performs sampling a charging current, andamplifies the sampled charging current to feed back to the main control chip.
- 5. The photocell irradiation sensor according to claim 4, wherein the drivesub-circuit comprises a drive transistor, and the PWM drive control signal of the masterchip is inputted to a base of the drive transistor through a resistor, a emitter of the drivetransistor is grounded; a collector of the drive transistor is electrically connected to themaximum power main circuit to drive the maximum power main circuit;the maximum power main circuit comprises a circuit switch, a filter capacitor, afilter inductor, and a freewheel diode; wherein, a base of the circuit switch is electricallyconnected to the collector of the drive transistor, and an emitter of the circuit switch iselectrically connected to a positive terminal of the silicon photocell through thechangeover switch, and the emitter and the base of the circuit switch are electricallyconnected through a resistor; a collector of the circuit switch is electrically connected to the filter inductor, the other end of the filter inductor is electrically connected to the energy storage circuit; one end of the filter capacitor is electrically connected to the emitter of the circuit switch, and the other end of the filter capacitor is connected to the input of the freewheel diode, the input of the freewheel diode is electrically connected to the negative terminal of the silicon photocell through the changeover switch, and the output of the freewheel diode is electrically connected to the collector of the circuit switch; the sampling sub-circuit comprises a charging current sampling resistor and an operational amplifier; one end of the charging current sampling resistor is electrically connected to the negative terminal of the silicon photocell and the input of the freewheel diode; the other end of the charging current sampling resistor is grounded; the non-inverting input of the operational amplifier is electrically connected to the input of the freewheel diode through a bias resistor, and the other end of the bias resistor is grounded through a capacitor; the inverting input of the operational amplifier is grounded through an amplification resistor, the inverting input and the output of the operational amplifier are electrically connected through another amplification resistor, and the output of the operational amplifier as a charging current measurement point is electrically connected to the master chip.
- 6. The photocell irradiation sensor according to claim 5, wherein the energy storage circuit comprises a farad capacitor and a regulated power supply chip; the positive terminal of the farad capacitor is electrically connected to the filter inductor, the negative terminal of the farad capacitor is grounded; the input of the regulated power supply chip is electrically connected to the filter inductor, and the output of the regulated power supply chip is used as a power supply output to supply power to each chip.
- 7. The photocell irradiation sensor according to claim 1, wherein the wireless communication module uses LORA communication to perform wireless communication.
- 8. The photocell irradiation sensor according to claim 7, wherein the wireless communication module comprises a LORA chip SX1276.
- 9. The photocell irradiation sensor according to claim 1, wherein the master chip is aSTM32L series single-chip microcomputer.
- 10. The photocell irradiation sensor according to any one of claims 1 to 9, whereinthe master chip is a single chip microcomputer STM32L151.FIG. 1 DrawingsFIG. 3 FIG. 2FIG. 5 FIG. 4
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