AU2003239475A1 - Schottky barrier cmos device and method - Google Patents

Schottky barrier cmos device and method

Info

Publication number
AU2003239475A1
AU2003239475A1 AU2003239475A AU2003239475A AU2003239475A1 AU 2003239475 A1 AU2003239475 A1 AU 2003239475A1 AU 2003239475 A AU2003239475 A AU 2003239475A AU 2003239475 A AU2003239475 A AU 2003239475A AU 2003239475 A1 AU2003239475 A1 AU 2003239475A1
Authority
AU
Australia
Prior art keywords
schottky barrier
cmos device
barrier cmos
schottky
cmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003239475A
Inventor
John M. Larson
John P. Snyder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spinnaker Semiconductor Inc
Original Assignee
Spinnaker Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/215,447 external-priority patent/US6949787B2/en
Priority claimed from US10/236,685 external-priority patent/US6744103B2/en
Priority claimed from US10/342,590 external-priority patent/US6784035B2/en
Application filed by Spinnaker Semiconductor Inc filed Critical Spinnaker Semiconductor Inc
Publication of AU2003239475A1 publication Critical patent/AU2003239475A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
AU2003239475A 2002-05-16 2003-05-16 Schottky barrier cmos device and method Abandoned AU2003239475A1 (en)

Applications Claiming Priority (27)

Application Number Priority Date Filing Date Title
US38123902P 2002-05-16 2002-05-16
US38865902P 2002-05-16 2002-05-16
US38116202P 2002-05-16 2002-05-16
US38123602P 2002-05-16 2002-05-16
US38132102P 2002-05-16 2002-05-16
US38123802P 2002-05-16 2002-05-16
US38123702P 2002-05-16 2002-05-16
US38132002P 2002-05-16 2002-05-16
US38124002P 2002-05-16 2002-05-16
US60/381,320 2002-05-16
US60/381,236 2002-05-16
US60/381,239 2002-05-16
US60/381,240 2002-05-16
US60/381,162 2002-05-16
US60/381,237 2002-05-16
US60/381,321 2002-05-16
US60/388,659 2002-05-16
US60/381,238 2002-05-16
US10/215,447 US6949787B2 (en) 2001-08-10 2002-08-09 Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
US10/215,447 2002-08-09
US10/236,685 US6744103B2 (en) 1999-12-16 2002-09-06 Short-channel schottky-barrier MOSFET device and manufacturing method
US10/236,685 2002-09-06
US10/342,590 US6784035B2 (en) 2002-01-23 2003-01-15 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
US10/342,590 2003-01-15
US44571103P 2003-02-07 2003-02-07
US60/445,711 2003-02-07
PCT/US2003/015367 WO2003098693A2 (en) 2002-05-16 2003-05-16 Schottky barrier cmos device and method

Publications (1)

Publication Number Publication Date
AU2003239475A1 true AU2003239475A1 (en) 2003-12-02

Family

ID=29554653

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003239475A Abandoned AU2003239475A1 (en) 2002-05-16 2003-05-16 Schottky barrier cmos device and method

Country Status (5)

Country Link
EP (1) EP1506579A2 (en)
JP (1) JP2006514424A (en)
CN (1) CN1669145A (en)
AU (1) AU2003239475A1 (en)
WO (1) WO2003098693A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5108408B2 (en) * 2007-07-26 2012-12-26 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
CN101510528B (en) * 2009-04-02 2011-09-28 英属维京群岛商节能元件股份有限公司 P-N junction diode structure of metal oxide semiconductor and method for producing the same
CN101533804B (en) * 2009-04-02 2011-09-14 英属维京群岛商节能元件股份有限公司 A metal oxide semiconductor P-N junction schootky diode structure and the production method thereof
JP2011049500A (en) * 2009-08-28 2011-03-10 Sharp Corp Method of manufacturing semiconductor device
KR102201101B1 (en) 2015-07-29 2021-01-11 서킷 시드, 엘엘씨 Complementary current field effect transistor element and amplifier
CN110581175A (en) * 2019-07-26 2019-12-17 中国科学院微电子研究所 PMOS transistor, preparation method of PMOS transistor and electronic equipment
CN113972220B (en) * 2021-09-27 2024-03-15 沈阳工业大学 High-integration central bidirectional Schottky junction type single-tube inverter and manufacturing method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE8101994L (en) * 1981-03-27 1982-09-28 Tove Per Arne ELECTRONIC CIRCUIT WITH SCHOTTKY FIELD TRANSISTOR WITH CONTACT ELEMENT WITH DIFFERENT SCHOTTKY BARRIER HEAD
JPS58223362A (en) * 1982-06-21 1983-12-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US4513309A (en) * 1982-11-03 1985-04-23 Westinghouse Electric Corp. Prevention of latch-up in CMOS integrated circuits using Schottky diodes
JPS63168046A (en) * 1986-12-29 1988-07-12 Nec Corp Cmos device
US5250834A (en) * 1991-09-19 1993-10-05 International Business Machines Corporation Silicide interconnection with schottky barrier diode isolation
JPH0697109A (en) * 1992-09-16 1994-04-08 Fujitsu Ltd Semiconductor device
US5665993A (en) * 1994-09-29 1997-09-09 Texas Instruments Incorporated Integrated circuit including a FET device and Schottky diode
JP3378512B2 (en) * 1998-10-16 2003-02-17 株式会社東芝 Semiconductor device
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts

Also Published As

Publication number Publication date
WO2003098693A2 (en) 2003-11-27
EP1506579A2 (en) 2005-02-16
CN1669145A (en) 2005-09-14
JP2006514424A (en) 2006-04-27
WO2003098693A3 (en) 2004-10-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase