AU2003223648A8 - Wide bandgap digital radiation imaging array - Google Patents

Wide bandgap digital radiation imaging array

Info

Publication number
AU2003223648A8
AU2003223648A8 AU2003223648A AU2003223648A AU2003223648A8 AU 2003223648 A8 AU2003223648 A8 AU 2003223648A8 AU 2003223648 A AU2003223648 A AU 2003223648A AU 2003223648 A AU2003223648 A AU 2003223648A AU 2003223648 A8 AU2003223648 A8 AU 2003223648A8
Authority
AU
Australia
Prior art keywords
radiation imaging
imaging array
wide bandgap
digital radiation
digital
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003223648A
Other versions
AU2003223648A1 (en
Inventor
Peter Littrup
Gregory W Auner
Feng Zhong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wayne State University
Original Assignee
Wayne State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/125,031 external-priority patent/US6848295B2/en
Priority claimed from US10/353,755 external-priority patent/US20040144927A1/en
Application filed by Wayne State University filed Critical Wayne State University
Publication of AU2003223648A8 publication Critical patent/AU2003223648A8/en
Publication of AU2003223648A1 publication Critical patent/AU2003223648A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
AU2003223648A 2002-04-17 2003-04-16 Wide bandgap digital radiation imaging array Abandoned AU2003223648A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/125,031 2002-04-17
US10/125,031 US6848295B2 (en) 2002-04-17 2002-04-17 Acoustic wave sensor apparatus, method and system using wide bandgap materials
US10/353,755 2003-01-28
US10/353,755 US20040144927A1 (en) 2003-01-28 2003-01-28 Microsystems arrays for digital radiation imaging and signal processing and method for making microsystem arrays
PCT/US2003/011775 WO2003090445A2 (en) 2002-04-17 2003-04-16 Wide bandgap digital radiation imaging array

Publications (2)

Publication Number Publication Date
AU2003223648A8 true AU2003223648A8 (en) 2003-11-03
AU2003223648A1 AU2003223648A1 (en) 2003-11-03

Family

ID=29253994

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003223648A Abandoned AU2003223648A1 (en) 2002-04-17 2003-04-16 Wide bandgap digital radiation imaging array

Country Status (2)

Country Link
AU (1) AU2003223648A1 (en)
WO (1) WO2003090445A2 (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5464984A (en) * 1985-12-11 1995-11-07 General Imaging Corporation X-ray imaging system and solid state detector therefor
JP2686263B2 (en) * 1987-11-19 1997-12-08 株式会社日立製作所 Radiation detection element
DE68923870T2 (en) * 1988-10-28 1995-12-21 Packard Instr Bv METHOD FOR MEASURING THE RADIOACTIVITY OF A SAMPLE USING A REVERSIBLE SOLID PHASE LIQUID PHASE SCINTILLATOR.
DE69115353T2 (en) * 1990-05-30 1996-05-09 Hitachi Ltd Laser processing device and its method
US5354980A (en) * 1993-06-17 1994-10-11 Hughes Aircraft Company Segmented multiplexer for spectroscopy focal plane arrays having a plurality of groups of multiplexer cells
US5677538A (en) * 1995-07-07 1997-10-14 Trustees Of Boston University Photodetectors using III-V nitrides
US5936247A (en) * 1997-06-27 1999-08-10 General Electric Company Imaging attenuation correction mechanism
US6875975B2 (en) * 1999-12-24 2005-04-05 Bae Systems Information And Electronic Systems Integration Inc Multi-color, multi-focal plane optical detector
US6768326B2 (en) * 2001-10-01 2004-07-27 General Electric Company SiC photodiode detectors for radiation detection applications

Also Published As

Publication number Publication date
AU2003223648A1 (en) 2003-11-03
WO2003090445A2 (en) 2003-10-30
WO2003090445A3 (en) 2004-07-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase