AU2003209622A1 - Pixel sensor array and method of manufacture thereof - Google Patents

Pixel sensor array and method of manufacture thereof

Info

Publication number
AU2003209622A1
AU2003209622A1 AU2003209622A AU2003209622A AU2003209622A1 AU 2003209622 A1 AU2003209622 A1 AU 2003209622A1 AU 2003209622 A AU2003209622 A AU 2003209622A AU 2003209622 A AU2003209622 A AU 2003209622A AU 2003209622 A1 AU2003209622 A1 AU 2003209622A1
Authority
AU
Australia
Prior art keywords
wafer
sensor input
electrically conductive
conductive via
sensor array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003209622A
Other languages
English (en)
Inventor
Einar Nygard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interon AS
Original Assignee
Interon AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IL148463A external-priority patent/IL148463A/en
Priority claimed from IL15086702A external-priority patent/IL150867A0/xx
Application filed by Interon AS filed Critical Interon AS
Publication of AU2003209622A1 publication Critical patent/AU2003209622A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
AU2003209622A 2002-03-03 2003-02-18 Pixel sensor array and method of manufacture thereof Abandoned AU2003209622A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IL148463 2002-03-03
IL148463A IL148463A (en) 2002-03-03 2002-03-03 Pixel sensor array and method of manufacture thereof
IL150867 2002-07-23
IL15086702A IL150867A0 (en) 2002-07-23 2002-07-23 Pixel sensor array and method of manufacture thereof
PCT/IL2003/000125 WO2003083944A1 (en) 2002-03-03 2003-02-18 Pixel sensor array and method of manufacture thereof

Publications (1)

Publication Number Publication Date
AU2003209622A1 true AU2003209622A1 (en) 2003-10-13

Family

ID=28676547

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003209622A Abandoned AU2003209622A1 (en) 2002-03-03 2003-02-18 Pixel sensor array and method of manufacture thereof

Country Status (7)

Country Link
US (1) US7132637B2 (https=)
EP (1) EP1483790B1 (https=)
JP (1) JP2005520346A (https=)
AT (1) ATE338345T1 (https=)
AU (1) AU2003209622A1 (https=)
DE (1) DE60307994T2 (https=)
WO (1) WO2003083944A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179345A (ja) * 2002-11-26 2004-06-24 Fujitsu Ltd 半導体用基板シート材及びその製造方法、及び基板シート材を用いたモールド方法及び半導体装置の製造方法
IL158345A0 (en) * 2003-10-09 2004-05-12 Interon As Pixel detector and method of manufacture and assembly thereof
GB2449853B (en) 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
EP2461347A1 (en) 2010-12-06 2012-06-06 Fei Company Detector system for transmission electron microscope
DE102011101835A1 (de) * 2011-05-16 2012-11-22 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
WO2013068912A1 (en) * 2011-11-08 2013-05-16 Koninklijke Philips Electronics N.V. Seamless tiling to build a large detector
US9357972B2 (en) 2012-07-17 2016-06-07 Cyber Medical Imaging, Inc. Intraoral radiographic sensors with cables having increased user comfort and methods of using the same
DE102013206407B3 (de) * 2013-04-11 2014-03-06 Siemens Aktiengesellschaft Sensorchip, computertomographischer Detektor diesen aufweisend und Herstellungsverfahren dafür
DE102013206404B3 (de) * 2013-04-11 2014-03-06 Siemens Aktiengesellschaft Sensorchip, computertomographischer Detektor diesen aufweisend, sowie ein Herstellungsverfahren und ein Betriebsverfahren dafür
US11335721B2 (en) * 2013-11-06 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor device with shielding layer
WO2018191725A1 (en) * 2017-04-14 2018-10-18 Paradromics, Inc. Low-area, low-power neural recording circuit, and method of training the same
US12019035B2 (en) 2021-07-16 2024-06-25 Rapiscan Holdings, Inc. Material detection in x-ray security screening

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020080A (en) * 1974-07-01 1977-04-26 Eastman Kodak Company Oxadiazolylphenyl aromatic ester compounds and their use as ultraviolet stabilizer in organic compositions
US4104674A (en) * 1977-02-07 1978-08-01 Honeywell Inc. Double sided hybrid mosaic focal plane
US4547792A (en) 1980-06-19 1985-10-15 Rockwell International Corporation Selective access array integrated circuit
JPS61128564A (ja) 1984-11-28 1986-06-16 Fujitsu Ltd 半導体装置
DE3633181C2 (de) * 1986-09-30 1998-12-10 Siemens Ag Reflexlichtschranke
JPH085566Y2 (ja) * 1989-07-12 1996-02-14 オリンパス光学工業株式会社 固体撮像装置
DE69013104T2 (de) 1989-07-29 1995-03-23 Shimadzu Corp., Kyoto Halbleiterstrahlungsbilddetektor und sein Herstellungsverfahren.
JP3077034B2 (ja) * 1990-07-25 2000-08-14 セイコーインスツルメンツ株式会社 半導体イメージセンサ装置
JPH05110048A (ja) 1991-10-14 1993-04-30 Mitsubishi Electric Corp 光−電子集積回路
US5734201A (en) * 1993-11-09 1998-03-31 Motorola, Inc. Low profile semiconductor device with like-sized chip and mounting substrate
BR9510290A (pt) * 1994-12-23 1997-11-11 Digirad Câmera de raios gama semicondutores e sistema médico de formação de imagens
JPH08316450A (ja) * 1995-05-17 1996-11-29 Hitachi Ltd 積層型固体撮像素子及びその製造方法
US5998292A (en) * 1997-11-12 1999-12-07 International Business Machines Corporation Method for making three dimensional circuit integration
JP3545247B2 (ja) * 1998-04-27 2004-07-21 シャープ株式会社 二次元画像検出器
US6586812B1 (en) * 1999-04-13 2003-07-01 Agilent Technologies, Inc. Isolation of alpha silicon diode sensors through ion implantation
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US6852566B2 (en) * 2003-03-12 2005-02-08 Taiwan Semiconductor Manufacturing Co., Ltd Self-aligned rear electrode for diode array element

Also Published As

Publication number Publication date
US7132637B2 (en) 2006-11-07
US20050121598A1 (en) 2005-06-09
EP1483790A1 (en) 2004-12-08
JP2005520346A (ja) 2005-07-07
ATE338345T1 (de) 2006-09-15
WO2003083944A1 (en) 2003-10-09
DE60307994D1 (de) 2006-10-12
DE60307994T2 (de) 2007-05-10
EP1483790B1 (en) 2006-08-30

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase