AU2001256543A1 - Horizontal acces semiconductor photo detector - Google Patents

Horizontal acces semiconductor photo detector

Info

Publication number
AU2001256543A1
AU2001256543A1 AU2001256543A AU5654301A AU2001256543A1 AU 2001256543 A1 AU2001256543 A1 AU 2001256543A1 AU 2001256543 A AU2001256543 A AU 2001256543A AU 5654301 A AU5654301 A AU 5654301A AU 2001256543 A1 AU2001256543 A1 AU 2001256543A1
Authority
AU
Australia
Prior art keywords
acces
horizontal
photo detector
semiconductor photo
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001256543A
Inventor
Roger Timothy Carline
Edward Thomas Robert Chidley
John Michael Heaton
David Charles Wilfred Herbert
Weng Yee Leong
David John Robbins
David Robert Wight
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of AU2001256543A1 publication Critical patent/AU2001256543A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System, e.g. Si-SiGe superlattices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
AU2001256543A 2000-05-20 2001-05-18 Horizontal acces semiconductor photo detector Abandoned AU2001256543A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0012167 2000-05-20
GBGB0012167.3A GB0012167D0 (en) 2000-05-20 2000-05-20 Improvements in photo detectors
PCT/GB2001/002211 WO2001090802A1 (en) 2000-05-20 2001-05-18 Horizontal acces semiconductor photo detector

Publications (1)

Publication Number Publication Date
AU2001256543A1 true AU2001256543A1 (en) 2001-12-03

Family

ID=9891957

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001256543A Abandoned AU2001256543A1 (en) 2000-05-20 2001-05-18 Horizontal acces semiconductor photo detector

Country Status (12)

Country Link
US (1) US6978067B2 (en)
EP (1) EP1292855B1 (en)
JP (1) JP2003534650A (en)
KR (1) KR100791240B1 (en)
CN (1) CN1443312A (en)
AU (1) AU2001256543A1 (en)
CA (1) CA2409935A1 (en)
DE (1) DE60101965T2 (en)
GB (1) GB0012167D0 (en)
MY (1) MY128382A (en)
TW (1) TWI242295B (en)
WO (1) WO2001090802A1 (en)

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AU2002356843A1 (en) * 2001-10-22 2003-05-06 Massachusetts Institute Of Technology Light modulation using the franz-keldysh effect
KR100495220B1 (en) * 2003-06-25 2005-06-14 삼성전기주식회사 Semiconductor Laser Diode Comprising Higher Order Mode Absorb Control Layers
US7535634B1 (en) * 2006-02-16 2009-05-19 The United States Of America As Represented By The National Aeronautics And Space Administration Optical device, system, and method of generating high angular momentum beams
US7570850B1 (en) 2006-06-19 2009-08-04 The United States Of America As Represented By The National Aeronautics And Space Administration WGM resonators for studying orbital angular momentum of a photon, and methods
US7515786B1 (en) 2006-07-21 2009-04-07 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration White-light whispering gallery mode optical resonator system and method
JP5273932B2 (en) * 2007-03-23 2013-08-28 キヤノン株式会社 Photodetection element, photodetection method, imaging element, and imaging method
US8084838B2 (en) * 2008-03-28 2011-12-27 Research Foundation Of State University Of New York Large-area PIN diode with reduced capacitance
US7720342B2 (en) * 2008-04-15 2010-05-18 Hewlett-Packard Development Company, L.P. Optical device with a graded bandgap structure and methods of making and using the same
US8515227B2 (en) * 2009-03-13 2013-08-20 Ofs Fitel, Llc Microbubble optical resonator
US8242432B2 (en) * 2009-10-23 2012-08-14 Kotura, Inc. System having light sensor with enhanced sensitivity including a multiplication layer for generating additional electrons
US8639065B2 (en) * 2010-06-18 2014-01-28 Kotura, Inc. System having avalanche effect light sensor with enhanced sensitivity
JP5653270B2 (en) * 2011-03-28 2015-01-14 株式会社東芝 Light receiving element, manufacturing method thereof, and optical transmission / reception unit
JP2012248587A (en) * 2011-05-26 2012-12-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light-receiving device
EP2581771A1 (en) * 2011-10-14 2013-04-17 Astrium Limited Resonator with reduced losses
JP2013191704A (en) * 2012-03-13 2013-09-26 Toshiba Corp Light receiving element
JP5631917B2 (en) 2012-03-29 2014-11-26 株式会社東芝 Optical transmission / reception system and optical receiving unit
US9490385B2 (en) 2012-05-29 2016-11-08 Hewlett Packard Enterprise Development Lp Devices including independently controllable absorption region and multiplication region electric fields
JP2014203895A (en) * 2013-04-02 2014-10-27 日本電信電話株式会社 Photodiode
US9377581B2 (en) 2013-05-08 2016-06-28 Mellanox Technologies Silicon Photonics Inc. Enhancing the performance of light sensors that receive light signals from an integrated waveguide
US9231131B2 (en) 2014-01-07 2016-01-05 International Business Machines Corporation Integrated photodetector waveguide structure with alignment tolerance
JP5914605B2 (en) * 2014-09-19 2016-05-11 株式会社東芝 Semiconductor photo detector
JP6622228B2 (en) * 2015-02-06 2019-12-18 技術研究組合光電子融合基盤技術研究所 Optical modulator and manufacturing method thereof
CN107430243B (en) * 2015-02-28 2020-08-14 华为技术有限公司 Optical waveguide terminating device, optical communication equipment and method for terminating optical wave
JP2016178234A (en) 2015-03-20 2016-10-06 株式会社東芝 Semiconductor light-receiving device
KR102384228B1 (en) * 2015-09-30 2022-04-07 삼성전자주식회사 Semiconductor laser resonator and Semiconductor laser device having the same
WO2017200620A2 (en) * 2016-02-29 2017-11-23 Stc.Unm Ring laser integrated with silicon-on-insulator waveguide
JP2017174838A (en) 2016-03-18 2017-09-28 株式会社東芝 Semiconductor light-receiving device
US10636818B2 (en) 2018-04-04 2020-04-28 Avago Technologies International Sales Pte. Limited Semiconductor device and sensor including a single photon avalanche diode (SPAD) structure
CN108521073B (en) * 2018-06-07 2023-11-24 江苏华兴激光科技有限公司 Microstructure on-chip light source device based on direct waveguide total reflection coupling connection and manufacturing method thereof
EP3770660A1 (en) * 2019-07-24 2021-01-27 Imec VZW A detector comprising a waveguide
CN111048606B (en) * 2019-12-25 2021-06-29 武汉邮电科学研究院有限公司 Germanium-silicon photoelectric detector with high bandwidth and high responsivity
DE102020200468A1 (en) 2020-01-16 2021-07-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung SEMICONDUCTOR LASER DIODE AND METHOD OF MANUFACTURING A SEMICONDUCTOR LASER DIODE
EP3940798A1 (en) * 2020-07-13 2022-01-19 Imec VZW Avalanche photodiode device with a curved absorption region
US20220196913A1 (en) * 2020-12-21 2022-06-23 Unm Rainforest Innovations Ring-Geometry Photodetector Designs For High-Sensitivity And High-Speed Detection Of Optical Signals For Fiber Optic And Integrated Optoelectronic Devices
CN114068736B (en) * 2021-10-18 2023-06-02 武汉光谷信息光电子创新中心有限公司 Photoelectric detector
CN114220881B (en) * 2021-12-14 2023-06-02 武汉光谷信息光电子创新中心有限公司 Photoelectric detector

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CA2068899C (en) 1991-09-17 1997-06-17 Samuel Leverte Mccall Whispering mode micro-resonator
JP3137720B2 (en) * 1992-03-06 2001-02-26 株式会社リコー Photoelectric conversion device and optical logic operation device using the same
US5878070A (en) * 1995-05-25 1999-03-02 Northwestern University Photonic wire microcavity light emitting devices
US5825799A (en) * 1995-05-25 1998-10-20 Northwestern University Microcavity semiconductor laser
US5790583A (en) * 1995-05-25 1998-08-04 Northwestern University Photonic-well Microcavity light emitting devices
KR19980018219A (en) * 1996-08-02 1998-06-05 도이 시게루 Optical measuring devices, suitable spectroscopic light source devices and photodetectors
US6633696B1 (en) * 1998-12-07 2003-10-14 California Institute Of Technology Resonant optical wave power control devices and methods

Also Published As

Publication number Publication date
US20040013367A1 (en) 2004-01-22
MY128382A (en) 2007-01-31
GB0012167D0 (en) 2000-07-12
DE60101965T2 (en) 2004-12-23
CN1443312A (en) 2003-09-17
DE60101965D1 (en) 2004-03-11
US6978067B2 (en) 2005-12-20
KR100791240B1 (en) 2008-01-03
KR20030001525A (en) 2003-01-06
JP2003534650A (en) 2003-11-18
WO2001090802A1 (en) 2001-11-29
CA2409935A1 (en) 2001-11-29
EP1292855A1 (en) 2003-03-19
TWI242295B (en) 2005-10-21
EP1292855B1 (en) 2004-02-04

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