AU2001236511A1 - Micro-electromechanical structure resonator, method of making, and method of using - Google Patents
Micro-electromechanical structure resonator, method of making, and method of usingInfo
- Publication number
- AU2001236511A1 AU2001236511A1 AU2001236511A AU3651101A AU2001236511A1 AU 2001236511 A1 AU2001236511 A1 AU 2001236511A1 AU 2001236511 A AU2001236511 A AU 2001236511A AU 3651101 A AU3651101 A AU 3651101A AU 2001236511 A1 AU2001236511 A1 AU 2001236511A1
- Authority
- AU
- Australia
- Prior art keywords
- micro
- making
- electromechanical structure
- structure resonator
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
- H03H3/0077—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients by tuning of resonance frequency
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B21/00—Head arrangements not specific to the method of recording or reproducing
- G11B21/16—Supporting the heads; Supporting the sockets for plug-in heads
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/4806—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives
- G11B5/484—Integrated arm assemblies, e.g. formed by material deposition or by etching from single piece of metal or by lamination of materials forming a single arm/suspension/head unit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2463—Clamped-clamped beam resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02283—Vibrating means
- H03H2009/0233—Vibrating means comprising perforations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09507228 | 2000-02-18 | ||
US09/507,228 US6445106B1 (en) | 2000-02-18 | 2000-02-18 | Micro-electromechanical structure resonator, method of making, and method of using |
PCT/US2001/002203 WO2001061846A1 (en) | 2000-02-18 | 2001-01-22 | Micro-electromechanical structure resonator, method of making, and method of using |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001236511A1 true AU2001236511A1 (en) | 2001-08-27 |
Family
ID=24017770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001236511A Abandoned AU2001236511A1 (en) | 2000-02-18 | 2001-01-22 | Micro-electromechanical structure resonator, method of making, and method of using |
Country Status (4)
Country | Link |
---|---|
US (2) | US6445106B1 (en) |
EP (1) | EP1260019B1 (en) |
AU (1) | AU2001236511A1 (en) |
WO (1) | WO2001061846A1 (en) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7071520B2 (en) * | 2000-08-23 | 2006-07-04 | Reflectivity, Inc | MEMS with flexible portions made of novel materials |
US7057246B2 (en) * | 2000-08-23 | 2006-06-06 | Reflectivity, Inc | Transition metal dielectric alloy materials for MEMS |
US7057251B2 (en) * | 2001-07-20 | 2006-06-06 | Reflectivity, Inc | MEMS device made of transition metal-dielectric oxide materials |
US6632698B2 (en) * | 2001-08-07 | 2003-10-14 | Hewlett-Packard Development Company, L.P. | Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS |
US6531668B1 (en) * | 2001-08-30 | 2003-03-11 | Intel Corporation | High-speed MEMS switch with high-resonance-frequency beam |
US6630871B2 (en) * | 2001-09-28 | 2003-10-07 | Intel Corporation | Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator |
US6714007B2 (en) * | 2002-01-18 | 2004-03-30 | Honeywell International Inc. | Optically powered resonant integrated microstructure magnetic field gradient sensor |
US7701022B2 (en) * | 2002-05-01 | 2010-04-20 | Rohm Co., Ltd. | Semiconductor device and method of producing the same |
US6835589B2 (en) * | 2002-11-14 | 2004-12-28 | International Business Machines Corporation | Three-dimensional integrated CMOS-MEMS device and process for making the same |
US7245897B2 (en) * | 2003-03-10 | 2007-07-17 | Intel Corporation | Using an electroacoustic resonator |
US6987432B2 (en) * | 2003-04-16 | 2006-01-17 | Robert Bosch Gmbh | Temperature compensation for silicon MEMS resonator |
US6876283B1 (en) * | 2003-07-11 | 2005-04-05 | Iowa State University Research Foundation, Inc. | Tapered-width micro-cantilevers and micro-bridges |
US7183622B2 (en) * | 2004-06-30 | 2007-02-27 | Intel Corporation | Module integrating MEMS and passive components |
FR2883560A1 (en) * | 2005-03-24 | 2006-09-29 | St Microelectronics Sa | ELECTROMECHANICAL MICROSYSTEM COMPRISING A BEAM DEFORMING BY FLEXION |
US7268463B2 (en) * | 2005-07-28 | 2007-09-11 | Freescale Semiconductor, Inc. | Stress release mechanism in MEMS device and method of making same |
US7612423B2 (en) * | 2005-08-31 | 2009-11-03 | Teledyne Scientific & Imaging, Llc | Signal-carrying flexure structure for micro-electromechanical devices |
US20070235501A1 (en) * | 2006-03-29 | 2007-10-11 | John Heck | Self-packaging MEMS device |
US7859365B2 (en) * | 2006-12-13 | 2010-12-28 | Georgia Tech Research Corporation | Low frequency process-variation-insensitive temperature-stable micromechanical resonators |
US7777596B2 (en) * | 2007-12-18 | 2010-08-17 | Robert Bosch Gmbh | MEMS resonator structure and method |
US8476809B2 (en) * | 2008-04-29 | 2013-07-02 | Sand 9, Inc. | Microelectromechanical systems (MEMS) resonators and related apparatus and methods |
US8704315B2 (en) * | 2008-06-26 | 2014-04-22 | Cornell University | CMOS integrated micromechanical resonators and methods for fabricating the same |
US7888843B2 (en) * | 2008-09-10 | 2011-02-15 | Georgia Tech Research Corporation | Thin-film piezoelectric-on-insulator resonators having perforated resonator bodies therein |
US7939990B2 (en) * | 2009-01-30 | 2011-05-10 | Integrated Device Technology, Inc. | Thin-film bulk acoustic resonators having perforated bodies that provide reduced susceptibility to process-induced lateral dimension variations |
US20100194246A1 (en) * | 2009-01-30 | 2010-08-05 | Integrated Device Technology, Inc. | Thin-Film Bulk Acoustic Resonators Having Reduced Susceptibility to Process-Induced Material Thickness Variations |
US8887571B2 (en) | 2009-03-31 | 2014-11-18 | Siemens Aktiengesellschaft | Vibrating micromechanical system having beam-shaped element |
US8381378B2 (en) * | 2009-06-19 | 2013-02-26 | Georgia Tech Research Corporation | Methods of forming micromechanical resonators having high density trench arrays therein that provide passive temperature compensation |
US8106724B1 (en) | 2009-07-23 | 2012-01-31 | Integrated Device Technologies, Inc. | Thin-film bulk acoustic resonators having perforated resonator body supports that enhance quality factor |
US8865497B2 (en) * | 2010-06-25 | 2014-10-21 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
US8501515B1 (en) | 2011-02-25 | 2013-08-06 | Integrated Device Technology Inc. | Methods of forming micro-electromechanical resonators using passive compensation techniques |
US8610336B1 (en) | 2011-09-30 | 2013-12-17 | Integrated Device Technology Inc | Microelectromechanical resonators having resistive heating elements therein configured to provide frequency tuning through convective heating of resonator bodies |
CN107592089B (en) * | 2017-09-14 | 2020-04-21 | 东南大学 | Low thermoelastic damping cantilever micro-beam resonator with through hole structure |
DE102018219546B3 (en) * | 2018-11-15 | 2019-09-12 | Robert Bosch Gmbh | Micromechanical component |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4381672A (en) * | 1981-03-04 | 1983-05-03 | The Bendix Corporation | Vibrating beam rotation sensor |
JPS60180203A (en) | 1984-02-27 | 1985-09-14 | Tdk Corp | Dielectric resonator and its manufacture |
US5061049A (en) | 1984-08-31 | 1991-10-29 | Texas Instruments Incorporated | Spatial light modulator and method |
US4614119A (en) * | 1985-03-08 | 1986-09-30 | The Foxboro Company | Resonant hollow beam and method |
US4764244A (en) * | 1985-06-11 | 1988-08-16 | The Foxboro Company | Resonant sensor and method of making same |
JPS63299605A (en) | 1987-05-29 | 1988-12-07 | Murata Mfg Co Ltd | Manufacture of dielectric resonator |
JP2547869B2 (en) | 1988-11-09 | 1996-10-23 | キヤノン株式会社 | PROBE UNIT, METHOD FOR DRIVING THE PROBE, AND SCANNING TUNNEL CURRENT DETECTION DEVICE HAVING THE PROBE UNIT |
JPH0723631B2 (en) | 1988-11-18 | 1995-03-15 | 株式会社ノザワ | Method for manufacturing resonator type soundproof panel |
JP3030574B2 (en) | 1990-08-16 | 2000-04-10 | キヤノン株式会社 | Micro-displacement information detecting probe element, scanning tunnel microscope, atomic force microscope, and information processing apparatus using the same |
US5314572A (en) | 1990-08-17 | 1994-05-24 | Analog Devices, Inc. | Method for fabricating microstructures |
JP2910807B2 (en) | 1991-10-25 | 1999-06-23 | 株式会社村田製作所 | Dielectric resonator device, dielectric filter, and method of manufacturing the same |
AU5869994A (en) * | 1992-12-11 | 1994-07-04 | Regents Of The University Of California, The | Microelectromechanical signal processors |
US5417115A (en) * | 1993-07-23 | 1995-05-23 | Honeywell Inc. | Dielectrically isolated resonant microsensors |
US5658698A (en) * | 1994-01-31 | 1997-08-19 | Canon Kabushiki Kaisha | Microstructure, process for manufacturing thereof and devices incorporating the same |
KR950024146A (en) | 1994-01-31 | 1995-08-21 | 모리시타 요이찌 | Information recording and reproducing apparatus and information recording and reproducing method |
JPH08222911A (en) | 1995-02-17 | 1996-08-30 | Toko Inc | Manufacture of dielectric filter and dielectric resonator |
JPH08329538A (en) * | 1995-05-30 | 1996-12-13 | Hewlett Packard Co <Hp> | Probe device |
US6557419B1 (en) | 1996-12-31 | 2003-05-06 | Honeywell International Inc. | Zero TCF thin film resonator |
US5808210A (en) * | 1996-12-31 | 1998-09-15 | Honeywell Inc. | Thin film resonant microbeam absolute pressure sensor |
US5914553A (en) * | 1997-06-16 | 1999-06-22 | Cornell Research Foundation, Inc. | Multistable tunable micromechanical resonators |
US6249073B1 (en) | 1999-01-14 | 2001-06-19 | The Regents Of The University Of Michigan | Device including a micromechanical resonator having an operating frequency and method of extending same |
US6269698B1 (en) * | 1999-03-25 | 2001-08-07 | Alliedsignal Inc. | Vibrating beam force sensor |
US6367914B1 (en) * | 1999-04-15 | 2002-04-09 | Ricoh Company, Ltd. | Electrostatic ink-jet head and method of production of the same |
JP2001026105A (en) * | 1999-07-15 | 2001-01-30 | Ricoh Co Ltd | Ink jet head |
US6263736B1 (en) * | 1999-09-24 | 2001-07-24 | Ut-Battelle, Llc | Electrostatically tunable resonance frequency beam utilizing a stress-sensitive film |
-
2000
- 2000-02-18 US US09/507,228 patent/US6445106B1/en not_active Expired - Lifetime
-
2001
- 2001-01-22 AU AU2001236511A patent/AU2001236511A1/en not_active Abandoned
- 2001-01-22 WO PCT/US2001/002203 patent/WO2001061846A1/en active Application Filing
- 2001-01-22 EP EP01908666.9A patent/EP1260019B1/en not_active Expired - Lifetime
-
2002
- 2002-01-09 US US10/046,128 patent/US6479921B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6479921B2 (en) | 2002-11-12 |
US6445106B1 (en) | 2002-09-03 |
WO2001061846A1 (en) | 2001-08-23 |
EP1260019A1 (en) | 2002-11-27 |
US20020096967A1 (en) | 2002-07-25 |
EP1260019B1 (en) | 2016-11-30 |
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