ATE502397T1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
ATE502397T1
ATE502397T1 AT08807057T AT08807057T ATE502397T1 AT E502397 T1 ATE502397 T1 AT E502397T1 AT 08807057 T AT08807057 T AT 08807057T AT 08807057 T AT08807057 T AT 08807057T AT E502397 T1 ATE502397 T1 AT E502397T1
Authority
AT
Austria
Prior art keywords
semiconductor substrate
ceramic plate
insulating ceramic
stress buffer
stress
Prior art date
Application number
AT08807057T
Other languages
English (en)
Inventor
Fumihiko Gejima
Hiroki Sakamoto
Original Assignee
Nissan Motor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor filed Critical Nissan Motor
Application granted granted Critical
Publication of ATE502397T1 publication Critical patent/ATE502397T1/de

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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
AT08807057T 2007-09-14 2008-09-08 Halbleiterbauelement ATE502397T1 (de)

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JP2007240073 2007-09-14
JP2008124703A JP5115318B2 (ja) 2007-09-14 2008-05-12 半導体装置
PCT/IB2008/002370 WO2009034454A2 (en) 2007-09-14 2008-09-08 Semiconductor device

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EP2892074B1 (de) * 2012-08-31 2018-01-03 Mitsubishi Materials Corporation Strommodulsubstrat und strommodul
JP2015002305A (ja) * 2013-06-18 2015-01-05 三菱電機株式会社 半導体装置
JP6354467B2 (ja) * 2014-09-01 2018-07-11 株式会社デンソー 半導体装置
JP6451257B2 (ja) * 2014-11-21 2019-01-16 富士電機株式会社 半導体装置
US11094661B2 (en) * 2015-11-16 2021-08-17 Kabushiki Kaisha Toyota Chuo Kenkyusho Bonded structure and method of manufacturing the same
US10418295B2 (en) 2016-01-28 2019-09-17 Mitsubishi Electric Corporation Power module
US11114387B2 (en) 2017-02-15 2021-09-07 Industrial Technology Research Institute Electronic packaging structure
US11495517B2 (en) * 2017-09-15 2022-11-08 Finar Module Sagl Packaging method and joint technology for an electronic device
JP6808067B2 (ja) * 2017-10-30 2021-01-06 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
JP7025948B2 (ja) * 2018-02-13 2022-02-25 ローム株式会社 半導体装置および半導体装置の製造方法

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JPS60257141A (ja) 1984-06-01 1985-12-18 Hitachi Ltd 半導体装置
JPH05175378A (ja) * 1991-12-26 1993-07-13 Hitachi Ltd 半導体装置
EP0661748A1 (de) * 1993-12-28 1995-07-05 Hitachi, Ltd. Halbleitervorrichtung
JPH07221265A (ja) * 1994-01-28 1995-08-18 Hitachi Ltd パワー半導体モジュール
JP2002231883A (ja) 2001-01-31 2002-08-16 Hitachi Ltd パワー半導体モジュールおよびそれを用いた電力変換装置
JP3928488B2 (ja) 2002-06-04 2007-06-13 富士電機デバイステクノロジー株式会社 半導体装置およびその製造方法
JP2004063655A (ja) * 2002-07-26 2004-02-26 Toyota Industries Corp 放熱システム、放熱方法、熱緩衝部材、半導体モジュール、ヒートスプレッダおよび基板
JP2006269848A (ja) 2005-03-25 2006-10-05 Hitachi Ltd 半導体装置

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US8125088B2 (en) 2012-02-28
EP2188835A2 (de) 2010-05-26
JP5115318B2 (ja) 2013-01-09
WO2009034454A2 (en) 2009-03-19
US20110309512A1 (en) 2011-12-22
WO2009034454A3 (en) 2009-06-25
JP2009088476A (ja) 2009-04-23

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