ATE453649T1 - Verfahren zur herstellung von trialkylgallium - Google Patents
Verfahren zur herstellung von trialkylgalliumInfo
- Publication number
- ATE453649T1 ATE453649T1 AT06023755T AT06023755T ATE453649T1 AT E453649 T1 ATE453649 T1 AT E453649T1 AT 06023755 T AT06023755 T AT 06023755T AT 06023755 T AT06023755 T AT 06023755T AT E453649 T1 ATE453649 T1 AT E453649T1
- Authority
- AT
- Austria
- Prior art keywords
- gallium
- containing compound
- producing
- group
- trialkyl
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 6
- 229910052733 gallium Inorganic materials 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 125000005843 halogen group Chemical group 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract 1
- -1 nitrogen-containing compound Chemical class 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005085050A JP4774772B2 (ja) | 2005-03-23 | 2005-03-23 | トリアルキルガリウムの製造方法 |
JP2005085048A JP4774771B2 (ja) | 2005-03-23 | 2005-03-23 | トリアルキルガリウムの製造方法 |
JP2005085047A JP4774770B2 (ja) | 2005-03-23 | 2005-03-23 | トリアルキルガリウムの製造方法 |
JP2005085052A JP4774773B2 (ja) | 2005-03-23 | 2005-03-23 | トリアルキルガリウムの製造方法 |
JP2005085053A JP4774774B2 (ja) | 2005-03-23 | 2005-03-23 | トリアルキルガリウムの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE453649T1 true ATE453649T1 (de) | 2010-01-15 |
Family
ID=36605368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06023755T ATE453649T1 (de) | 2005-03-23 | 2006-03-23 | Verfahren zur herstellung von trialkylgallium |
Country Status (4)
Country | Link |
---|---|
US (2) | US7667063B2 (de) |
EP (3) | EP1705719B1 (de) |
AT (1) | ATE453649T1 (de) |
DE (2) | DE602006018814D1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4821007B2 (ja) * | 2007-03-14 | 2011-11-24 | 国立大学法人大阪大学 | Iii族元素窒化物結晶の製造方法およびiii族元素窒化物結晶 |
DE102007056643B3 (de) * | 2007-11-24 | 2009-06-04 | Leuze Electronic Gmbh & Co Kg | Optischer Sensor |
CN102020669B (zh) * | 2010-12-22 | 2013-01-09 | 江苏南大光电材料股份有限公司 | 工业化制备三甲基镓的方法 |
CN102020670B (zh) * | 2010-12-22 | 2013-01-09 | 江苏南大光电材料股份有限公司 | 工业化制备三乙基镓的方法 |
CN102127102B (zh) * | 2011-02-15 | 2014-01-15 | 江苏南大光电材料股份有限公司 | 三甲基铟的纯化装置 |
WO2012150229A1 (en) * | 2011-05-03 | 2012-11-08 | Akzo Nobel Chemicals International B.V. | Process for the preparation of trialkyl gallium |
TWI632151B (zh) | 2011-11-28 | 2018-08-11 | 烏明克股份有限兩合公司 | 第iiia族金屬的三烷基化合物之製法 |
CN102503969B (zh) * | 2011-11-30 | 2016-01-27 | 苏州普耀光电材料有限公司 | 一步法制备高纯三甲基镓的方法 |
CN102503968B (zh) * | 2011-11-30 | 2015-11-18 | 苏州普耀光电材料有限公司 | 一步法制备高纯三乙基镓的方法 |
WO2013170195A1 (en) * | 2012-05-11 | 2013-11-14 | Medicus Biosciences, Llc | Biocompatible hydrogel treatments for retinal detachment |
WO2014078263A1 (en) * | 2012-11-14 | 2014-05-22 | Dow Global Technologies Llc | Methods of producing trimethylgallium |
WO2014093419A1 (en) | 2012-12-12 | 2014-06-19 | Dow Global Technologies Llc | Production of tri-alkyl compounds of group 3a metals |
CN103204864B (zh) * | 2013-03-21 | 2015-08-26 | 苏州普耀光电材料有限公司 | 一种高纯三甲基铟的制备方法 |
KR101503491B1 (ko) | 2013-04-05 | 2015-03-18 | (주)마이크로켐 | 고수율을 갖는 트리메틸갈륨의 제조방법 |
CN103333184A (zh) * | 2013-07-05 | 2013-10-02 | 江苏南大光电材料股份有限公司 | 高效低成本生产三甲基镓的方法 |
CN106146540A (zh) * | 2015-03-26 | 2016-11-23 | 清远先导材料有限公司 | 一种三乙基镓的生产方法 |
US11673903B2 (en) | 2018-04-11 | 2023-06-13 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
US10787466B2 (en) | 2018-04-11 | 2020-09-29 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
KR20230034431A (ko) | 2018-06-21 | 2023-03-09 | 인프리아 코포레이션 | 모노알킬 주석 알콕사이드 및 이들의 가수분해 및 축합 생성물의 안정적인 용액 |
US11966158B2 (en) | 2019-01-30 | 2024-04-23 | Inpria Corporation | Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods |
US11498934B2 (en) | 2019-01-30 | 2022-11-15 | Inpria Corporation | Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods |
CN111116618B (zh) * | 2019-12-20 | 2022-06-21 | 南京奥格美化学研究所有限公司 | 制备烷基金属化合物的方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
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DE231568C (de) * | 1909-12-07 | |||
US3187061A (en) | 1962-06-13 | 1965-06-01 | Cincinnati Milling Machine Co | Organomagnesium complexes having enhanced storage stability |
SU325847A1 (ru) | 1970-01-26 | 1974-01-05 | Л. И. Захаркин, Ю. В. Юшков, В. В. Гавриленко, Л. С. Иванов, | Способ получения галлийтриалкилов |
SU388563A1 (ru) | 1971-06-04 | 1976-04-05 | Предприятие П/Я Х-5476 | Способ получени алкильных производ-ных галли |
GB2123423B (en) | 1982-06-29 | 1985-11-27 | Secr Defence | Purification of trialkyl gallium |
GB8316605D0 (en) | 1983-06-17 | 1983-07-20 | Secr Defence | Preparation of metal alkyls |
DD231568A1 (de) | 1984-12-21 | 1986-01-02 | Tech Hochschule C Schorlemmer | Verfahren zur herstellung von hochreinen galliumfrialkylen |
JPS62153293A (ja) | 1985-12-26 | 1987-07-08 | Sumitomo Chem Co Ltd | トリエチルガリウムの製造方法 |
JPH01301684A (ja) | 1988-05-30 | 1989-12-05 | Nippon Mining Co Ltd | 有機金属化合物の製造方法 |
US4904616A (en) * | 1988-07-25 | 1990-02-27 | Air Products And Chemicals, Inc. | Method of depositing arsine, antimony and phosphine substitutes |
JP2654687B2 (ja) | 1989-05-17 | 1997-09-17 | 東燃株式会社 | オレフイン重合用触媒成分 |
JPH03123784A (ja) | 1989-10-09 | 1991-05-27 | Nippon Mining Co Ltd | トリメチルガリウムの製造方法 |
JPH03127795A (ja) | 1989-10-09 | 1991-05-30 | Nippon Mining Co Ltd | アルキル金属化合物の製造方法 |
JPH0446138A (ja) | 1990-06-12 | 1992-02-17 | Hitachi Chem Co Ltd | アルデヒド基を有する芳香族基置換アルカン酸誘導体及びその製造法 |
US5248800A (en) | 1991-11-19 | 1993-09-28 | Shell Research Limited | Process for the preparation of trialkyl gallium compounds |
US6462361B1 (en) * | 1995-12-27 | 2002-10-08 | Showa Denko K.K. | GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure |
US6124500A (en) | 1998-03-09 | 2000-09-26 | Rohm And Haas Company | Process for synthesizing benzoic acids |
JP3977919B2 (ja) | 1998-04-24 | 2007-09-19 | 株式会社カネカ | グリニヤール試薬溶液又はその安定化法 |
JP2001072630A (ja) | 1999-09-07 | 2001-03-21 | Mitsubishi Chemicals Corp | ハロヒドリンの製造方法 |
JP2003055099A (ja) | 2001-08-22 | 2003-02-26 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体基板の製造方法及び窒化ガリウム系化合物半導体基板 |
JP2003335727A (ja) | 2002-05-16 | 2003-11-28 | Dainippon Ink & Chem Inc | エステル化合物の製造方法 |
-
2006
- 2006-03-22 US US11/385,687 patent/US7667063B2/en active Active
- 2006-03-23 DE DE602006018814T patent/DE602006018814D1/de active Active
- 2006-03-23 EP EP06005982A patent/EP1705719B1/de active Active
- 2006-03-23 AT AT06023755T patent/ATE453649T1/de not_active IP Right Cessation
- 2006-03-23 EP EP06023755A patent/EP1755175B1/de active Active
- 2006-03-23 DE DE602006011402T patent/DE602006011402D1/de active Active
- 2006-03-23 EP EP07022179A patent/EP1903618B1/de active Active
-
2009
- 2009-10-01 US US12/571,588 patent/US8278470B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP1903618A1 (de) | 2008-03-26 |
US8278470B2 (en) | 2012-10-02 |
DE602006011402D1 (de) | 2010-02-11 |
US7667063B2 (en) | 2010-02-23 |
EP1755175B1 (de) | 2009-12-30 |
EP1755175A1 (de) | 2007-02-21 |
US20100013055A1 (en) | 2010-01-21 |
US20060214161A1 (en) | 2006-09-28 |
EP1903618B1 (de) | 2012-01-04 |
DE602006018814D1 (de) | 2011-01-27 |
EP1705719B1 (de) | 2010-12-15 |
EP1705719A1 (de) | 2006-09-27 |
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |