ATE453649T1 - Verfahren zur herstellung von trialkylgallium - Google Patents

Verfahren zur herstellung von trialkylgallium

Info

Publication number
ATE453649T1
ATE453649T1 AT06023755T AT06023755T ATE453649T1 AT E453649 T1 ATE453649 T1 AT E453649T1 AT 06023755 T AT06023755 T AT 06023755T AT 06023755 T AT06023755 T AT 06023755T AT E453649 T1 ATE453649 T1 AT E453649T1
Authority
AT
Austria
Prior art keywords
gallium
containing compound
producing
group
trialkyl
Prior art date
Application number
AT06023755T
Other languages
English (en)
Inventor
Hisayoshi Yanagihara
Atau Ioku
Takatoshi Mori
Hikari Mitsui
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005085050A external-priority patent/JP4774772B2/ja
Priority claimed from JP2005085048A external-priority patent/JP4774771B2/ja
Priority claimed from JP2005085047A external-priority patent/JP4774770B2/ja
Priority claimed from JP2005085052A external-priority patent/JP4774773B2/ja
Priority claimed from JP2005085053A external-priority patent/JP4774774B2/ja
Application filed by Nichia Corp filed Critical Nichia Corp
Application granted granted Critical
Publication of ATE453649T1 publication Critical patent/ATE453649T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
AT06023755T 2005-03-23 2006-03-23 Verfahren zur herstellung von trialkylgallium ATE453649T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005085050A JP4774772B2 (ja) 2005-03-23 2005-03-23 トリアルキルガリウムの製造方法
JP2005085048A JP4774771B2 (ja) 2005-03-23 2005-03-23 トリアルキルガリウムの製造方法
JP2005085047A JP4774770B2 (ja) 2005-03-23 2005-03-23 トリアルキルガリウムの製造方法
JP2005085052A JP4774773B2 (ja) 2005-03-23 2005-03-23 トリアルキルガリウムの製造方法
JP2005085053A JP4774774B2 (ja) 2005-03-23 2005-03-23 トリアルキルガリウムの製造方法

Publications (1)

Publication Number Publication Date
ATE453649T1 true ATE453649T1 (de) 2010-01-15

Family

ID=36605368

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06023755T ATE453649T1 (de) 2005-03-23 2006-03-23 Verfahren zur herstellung von trialkylgallium

Country Status (4)

Country Link
US (2) US7667063B2 (de)
EP (3) EP1705719B1 (de)
AT (1) ATE453649T1 (de)
DE (2) DE602006018814D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4821007B2 (ja) * 2007-03-14 2011-11-24 国立大学法人大阪大学 Ｉｉｉ族元素窒化物結晶の製造方法およびｉｉｉ族元素窒化物結晶
DE102007056643B3 (de) * 2007-11-24 2009-06-04 Leuze Electronic Gmbh & Co Kg Optischer Sensor
CN102020669B (zh) * 2010-12-22 2013-01-09 江苏南大光电材料股份有限公司 工业化制备三甲基镓的方法
CN102020670B (zh) * 2010-12-22 2013-01-09 江苏南大光电材料股份有限公司 工业化制备三乙基镓的方法
CN102127102B (zh) * 2011-02-15 2014-01-15 江苏南大光电材料股份有限公司 三甲基铟的纯化装置
WO2012150229A1 (en) * 2011-05-03 2012-11-08 Akzo Nobel Chemicals International B.V. Process for the preparation of trialkyl gallium
TWI632151B (zh) 2011-11-28 2018-08-11 烏明克股份有限兩合公司 第iiia族金屬的三烷基化合物之製法
CN102503969B (zh) * 2011-11-30 2016-01-27 苏州普耀光电材料有限公司 一步法制备高纯三甲基镓的方法
CN102503968B (zh) * 2011-11-30 2015-11-18 苏州普耀光电材料有限公司 一步法制备高纯三乙基镓的方法
WO2013170195A1 (en) * 2012-05-11 2013-11-14 Medicus Biosciences, Llc Biocompatible hydrogel treatments for retinal detachment
WO2014078263A1 (en) * 2012-11-14 2014-05-22 Dow Global Technologies Llc Methods of producing trimethylgallium
WO2014093419A1 (en) 2012-12-12 2014-06-19 Dow Global Technologies Llc Production of tri-alkyl compounds of group 3a metals
CN103204864B (zh) * 2013-03-21 2015-08-26 苏州普耀光电材料有限公司 一种高纯三甲基铟的制备方法
KR101503491B1 (ko) 2013-04-05 2015-03-18 (주)마이크로켐 고수율을 갖는 트리메틸갈륨의 제조방법
CN103333184A (zh) * 2013-07-05 2013-10-02 江苏南大光电材料股份有限公司 高效低成本生产三甲基镓的方法
CN106146540A (zh) * 2015-03-26 2016-11-23 清远先导材料有限公司 一种三乙基镓的生产方法
US11673903B2 (en) 2018-04-11 2023-06-13 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US10787466B2 (en) 2018-04-11 2020-09-29 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
KR20230034431A (ko) 2018-06-21 2023-03-09 인프리아 코포레이션 모노알킬 주석 알콕사이드 및 이들의 가수분해 및 축합 생성물의 안정적인 용액
US11966158B2 (en) 2019-01-30 2024-04-23 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods
US11498934B2 (en) 2019-01-30 2022-11-15 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods
CN111116618B (zh) * 2019-12-20 2022-06-21 南京奥格美化学研究所有限公司 制备烷基金属化合物的方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE231568C (de) * 1909-12-07
US3187061A (en) 1962-06-13 1965-06-01 Cincinnati Milling Machine Co Organomagnesium complexes having enhanced storage stability
SU325847A1 (ru) 1970-01-26 1974-01-05 Л. И. Захаркин, Ю. В. Юшков, В. В. Гавриленко, Л. С. Иванов, Способ получения галлийтриалкилов
SU388563A1 (ru) 1971-06-04 1976-04-05 Предприятие П/Я Х-5476 Способ получени алкильных производ-ных галли
GB2123423B (en) 1982-06-29 1985-11-27 Secr Defence Purification of trialkyl gallium
GB8316605D0 (en) 1983-06-17 1983-07-20 Secr Defence Preparation of metal alkyls
DD231568A1 (de) 1984-12-21 1986-01-02 Tech Hochschule C Schorlemmer Verfahren zur herstellung von hochreinen galliumfrialkylen
JPS62153293A (ja) 1985-12-26 1987-07-08 Sumitomo Chem Co Ltd トリエチルガリウムの製造方法
JPH01301684A (ja) 1988-05-30 1989-12-05 Nippon Mining Co Ltd 有機金属化合物の製造方法
US4904616A (en) * 1988-07-25 1990-02-27 Air Products And Chemicals, Inc. Method of depositing arsine, antimony and phosphine substitutes
JP2654687B2 (ja) 1989-05-17 1997-09-17 東燃株式会社 オレフイン重合用触媒成分
JPH03123784A (ja) 1989-10-09 1991-05-27 Nippon Mining Co Ltd トリメチルガリウムの製造方法
JPH03127795A (ja) 1989-10-09 1991-05-30 Nippon Mining Co Ltd アルキル金属化合物の製造方法
JPH0446138A (ja) 1990-06-12 1992-02-17 Hitachi Chem Co Ltd アルデヒド基を有する芳香族基置換アルカン酸誘導体及びその製造法
US5248800A (en) 1991-11-19 1993-09-28 Shell Research Limited Process for the preparation of trialkyl gallium compounds
US6462361B1 (en) * 1995-12-27 2002-10-08 Showa Denko K.K. GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure
US6124500A (en) 1998-03-09 2000-09-26 Rohm And Haas Company Process for synthesizing benzoic acids
JP3977919B2 (ja) 1998-04-24 2007-09-19 株式会社カネカ グリニヤール試薬溶液又はその安定化法
JP2001072630A (ja) 1999-09-07 2001-03-21 Mitsubishi Chemicals Corp ハロヒドリンの製造方法
JP2003055099A (ja) 2001-08-22 2003-02-26 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体基板の製造方法及び窒化ガリウム系化合物半導体基板
JP2003335727A (ja) 2002-05-16 2003-11-28 Dainippon Ink & Chem Inc エステル化合物の製造方法

Also Published As

Publication number Publication date
EP1903618A1 (de) 2008-03-26
US8278470B2 (en) 2012-10-02
DE602006011402D1 (de) 2010-02-11
US7667063B2 (en) 2010-02-23
EP1755175B1 (de) 2009-12-30
EP1755175A1 (de) 2007-02-21
US20100013055A1 (en) 2010-01-21
US20060214161A1 (en) 2006-09-28
EP1903618B1 (de) 2012-01-04
DE602006018814D1 (de) 2011-01-27
EP1705719B1 (de) 2010-12-15
EP1705719A1 (de) 2006-09-27

Similar Documents

Publication Publication Date Title
ATE453649T1 (de) Verfahren zur herstellung von trialkylgallium
AR054097A1 (es) Sintesis de ester terc-butilico de acido (5-bromo-4-metilpiridin-3-ilmetil)-etilcarbamico
ATE518972T1 (de) Silanzusammensetzung, verfahren zum herstellen eines siliziumfilms und einer solarzelle
ATE533775T1 (de) Verfahren zur herstellung von 17-vinyl-triflaten als intermediate
ATE497769T1 (de) Verfahren zur herstellung von ibandronat
DE50305141D1 (de) Verfahren zur herstellung von metallkomplexen
ATE517096T1 (de) Verfahren zur herstellung von aminopyrimidinen
EA200700064A1 (ru) Способ получения эфиров 4,4-дифтор-3-оксобутановой кислоты
ATE314380T1 (de) Verfahren zur herstellung von aminoalkylsilanen
ATE402185T1 (de) Verfahren für fluorcytidinderivate
ATE207055T1 (de) Verfahren zur herstellung von 4-aryl-3- hydroxymethyl-piperidinen
EA200700767A1 (ru) Способ получения пиразолов
HUP0201357A2 (hu) Aszimmetrikus rézkomplex, előállítása, és eljárás ciklopropánkarbonsav-észter-származékok előállítására felhasználásával
ATE405947T1 (de) Verfahren zur herstellung vonn substraten für epitakitisches wachstum
DE50208395D1 (de) Verfahren zur Herstellung von Aminoalkylsilanen
DE69920186D1 (de) Verfahren zur herstellung von cyclopropylacetylen
DE602004013365D1 (de) Verfahren zur modifizierung eines fluorpolymersubstrats und dadurch erhaltene verbundgegenstände
DE602004030091D1 (de) Verfahren zur reduktiven deshalogenierung
ATE363460T1 (de) Verfahren zur herstellung von fluorhalogenalkanen
ATE528358T1 (de) Verfahren zur herstellung einer azoverbindung
ATE202080T1 (de) Verfahren zur herstellung von 2-cyanobiphenyl verbindungen
RU2008145046A (ru) Производное 2-алкенил-3-аминотиофена и способ его получения
DE59509183D1 (de) Verfahren zur herstellung von n,n'-verbrückten bis-tetramethylpiperidinyl-verbindungen
ATE461169T1 (de) Verfahren zur inhibierung der verfärbung von methylenbisanilinverbindungen
DE602005004278D1 (de) Arylpyrrol mit antitubulinwirkung, arylfulran- und arylthiopenderivate, verfahren zur herstellung und verwendung als antimitotikum

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties