ATE419652T1 - Solarzellenstruktur mit rückkontakten und stromsammlung mittels transistoreffekt und herstellungsverfahren dafür - Google Patents
Solarzellenstruktur mit rückkontakten und stromsammlung mittels transistoreffekt und herstellungsverfahren dafürInfo
- Publication number
- ATE419652T1 ATE419652T1 AT05814585T AT05814585T ATE419652T1 AT E419652 T1 ATE419652 T1 AT E419652T1 AT 05814585 T AT05814585 T AT 05814585T AT 05814585 T AT05814585 T AT 05814585T AT E419652 T1 ATE419652 T1 AT E419652T1
- Authority
- AT
- Austria
- Prior art keywords
- solar cell
- bipolar transistors
- cell structure
- production method
- current collection
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 239000000969 carrier Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES200402629A ES2253106B1 (es) | 2004-11-02 | 2004-11-02 | Estructura de celula solar con contactos posteriores y coleccion de corriente por efecto transistor y procedimiento para su fabricacion. |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE419652T1 true ATE419652T1 (de) | 2009-01-15 |
Family
ID=36336235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05814585T ATE419652T1 (de) | 2004-11-02 | 2005-11-02 | Solarzellenstruktur mit rückkontakten und stromsammlung mittels transistoreffekt und herstellungsverfahren dafür |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080092950A1 (de) |
EP (1) | EP1826825B1 (de) |
AT (1) | ATE419652T1 (de) |
DE (1) | DE602005012146D1 (de) |
ES (2) | ES2253106B1 (de) |
WO (1) | WO2006051132A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2357596B8 (es) | 2009-10-14 | 2012-10-30 | Universidad Del Pais Vasco-Euskal Herriko Unibertsitatea | Dispositivo fotovoltaico y panel fotovoltaico. |
NL2006933C2 (en) * | 2011-06-14 | 2012-12-17 | Stichting Energie | Photo-voltaic cell. |
TWI504279B (zh) | 2011-12-01 | 2015-10-11 | Ind Tech Res Inst | Mems音波感測器及其製造方法 |
ES2645479B1 (es) | 2016-06-03 | 2018-11-05 | Universidad Del País Vasco / Euskal Herriko Unibertsitatea | Célula fotovoltaica, panel fotovoltaico y método de fabricación de células fotovoltaicas |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4665277A (en) * | 1986-03-11 | 1987-05-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Floating emitter solar cell |
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
JP3070489B2 (ja) * | 1996-10-09 | 2000-07-31 | トヨタ自動車株式会社 | 集光型太陽電池素子 |
DE10016972A1 (de) * | 2000-04-06 | 2001-10-25 | Angew Solarenergie Ase Gmbh | Solarzelle |
DE10142481A1 (de) * | 2001-08-31 | 2003-03-27 | Rudolf Hezel | Solarzelle sowie Verfahren zur Herstellung einer solchen |
US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
-
2004
- 2004-11-02 ES ES200402629A patent/ES2253106B1/es active Active
-
2005
- 2005-11-02 US US11/666,841 patent/US20080092950A1/en not_active Abandoned
- 2005-11-02 ES ES05814585T patent/ES2322383T3/es active Active
- 2005-11-02 AT AT05814585T patent/ATE419652T1/de not_active IP Right Cessation
- 2005-11-02 DE DE602005012146T patent/DE602005012146D1/de active Active
- 2005-11-02 WO PCT/ES2005/000588 patent/WO2006051132A1/es active Application Filing
- 2005-11-02 EP EP05814585A patent/EP1826825B1/de not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
EP1826825A1 (de) | 2007-08-29 |
ES2253106B1 (es) | 2007-07-16 |
WO2006051132A1 (es) | 2006-05-18 |
US20080092950A1 (en) | 2008-04-24 |
ES2322383T3 (es) | 2009-06-19 |
EP1826825B1 (de) | 2008-12-31 |
DE602005012146D1 (de) | 2009-02-12 |
ES2253106A1 (es) | 2006-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE553501T1 (de) | Photovoltaische zelle | |
TW200635058A (en) | Back junction solar cell and process for producing the same | |
ATE467909T1 (de) | Solarzelle und herstellungsverfahren | |
WO2008013604A3 (en) | Solar cell with reduced base diffusion area | |
MY151543A (en) | Monolithic integration of nonplanar solar cells | |
TW200802996A (en) | Semiconductor device and method of manufacturing semiconductor device | |
WO2008040273A3 (de) | Lokale heterostrukturkontakte | |
WO2010025391A3 (en) | Integrated photodiode for semiconductor substrates | |
WO2007149969A3 (en) | Frameless photovoltaic module | |
MX2015007998A (es) | Emisor híbrido de celda solar con contacto posterior. | |
EP1798778A3 (de) | Integrierte Dünnfilm-Solarzelle und Verfahren zu ihrer Herstellung | |
EP2356689A4 (de) | Solarzelle mit rückseitigem weg für den kontakt zur emitterschicht | |
WO2010126570A3 (en) | Bifacial solar cells with back surface doping | |
WO2003019694A3 (de) | Lösungen polymerer halbleiter | |
DE50014824D1 (de) | Solarzelle mit einer Schutzdiode und ihr Herstellungsverfahren | |
TW200642116A (en) | Avalanch photo diode | |
ATE419652T1 (de) | Solarzellenstruktur mit rückkontakten und stromsammlung mittels transistoreffekt und herstellungsverfahren dafür | |
TW200640004A (en) | Solid-state imaging device and method for manufacturing the same | |
US20160283011A1 (en) | Color filter substrate, display panel and touch display device | |
TW200635057A (en) | Back junction solar cell and process for producing the same | |
WO2010013956A3 (en) | Solar cell, method of manufacturing the same, and solar cell module | |
JP2002289825A5 (de) | ||
WO2008088019A1 (ja) | バイポーラ型半導体素子 | |
EP1909329A4 (de) | Halbleiterbauelement | |
WO2009022592A1 (ja) | ソフトリカバリーダイオード |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |