AT555503T - Field effect transistor and method for the production thereof - Google Patents

Field effect transistor and method for the production thereof

Info

Publication number
AT555503T
AT555503T AT09012657T AT09012657T AT555503T AT 555503 T AT555503 T AT 555503T AT 09012657 T AT09012657 T AT 09012657T AT 09012657 T AT09012657 T AT 09012657T AT 555503 T AT555503 T AT 555503T
Authority
AT
Austria
Prior art keywords
production
method
field effect
effect transistor
transistor
Prior art date
Application number
AT09012657T
Other languages
German (de)
Inventor
Tatsuya Iwasaki
Naho Itagaki
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2008261878A priority Critical patent/JP5430113B2/en
Application filed by Canon Kk filed Critical Canon Kk
Publication of AT555503T publication Critical patent/AT555503T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
AT09012657T 2008-10-08 2009-10-06 Field effect transistor and method for the production thereof AT555503T (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008261878A JP5430113B2 (en) 2008-10-08 2008-10-08 Field effect transistor and manufacturing method thereof

Publications (1)

Publication Number Publication Date
AT555503T true AT555503T (en) 2012-05-15

Family

ID=41445710

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09012657T AT555503T (en) 2008-10-08 2009-10-06 Field effect transistor and method for the production thereof

Country Status (6)

Country Link
US (1) US8164090B2 (en)
EP (1) EP2175493B1 (en)
JP (1) JP5430113B2 (en)
KR (1) KR101224943B1 (en)
CN (1) CN101719514B (en)
AT (1) AT555503T (en)

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Also Published As

Publication number Publication date
CN101719514A (en) 2010-06-02
US8164090B2 (en) 2012-04-24
EP2175493A1 (en) 2010-04-14
KR101224943B1 (en) 2013-01-22
KR20100039806A (en) 2010-04-16
JP5430113B2 (en) 2014-02-26
EP2175493B1 (en) 2012-04-25
JP2010093070A (en) 2010-04-22
US20100084655A1 (en) 2010-04-08
CN101719514B (en) 2012-06-27

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