AT544182T - Field effect transistor of the fin type - Google Patents

Field effect transistor of the fin type

Info

Publication number
AT544182T
AT544182T AT06788172T AT06788172T AT544182T AT 544182 T AT544182 T AT 544182T AT 06788172 T AT06788172 T AT 06788172T AT 06788172 T AT06788172 T AT 06788172T AT 544182 T AT544182 T AT 544182T
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
fin type
fin
type
Prior art date
Application number
AT06788172T
Other languages
German (de)
Inventor
Edward Nowak
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US11/161,442 priority Critical patent/US7348642B2/en
Application filed by Ibm filed Critical Ibm
Priority to PCT/US2006/028465 priority patent/WO2007019023A2/en
Publication of AT544182T publication Critical patent/AT544182T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/785Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/66818Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/785Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7856Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with an non-uniform gate, e.g. varying doping structure, shape or composition on different sides of the fin, or different gate insulator thickness or composition on opposing fin sides
AT06788172T 2005-08-03 2006-07-21 Field effect transistor of the fin type AT544182T (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/161,442 US7348642B2 (en) 2005-08-03 2005-08-03 Fin-type field effect transistor
PCT/US2006/028465 WO2007019023A2 (en) 2005-08-03 2006-07-21 Fin-type field effect transistor

Publications (1)

Publication Number Publication Date
AT544182T true AT544182T (en) 2012-02-15

Family

ID=37716900

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06788172T AT544182T (en) 2005-08-03 2006-07-21 Field effect transistor of the fin type

Country Status (8)

Country Link
US (4) US7348642B2 (en)
EP (1) EP1920467B1 (en)
JP (1) JP5220604B2 (en)
KR (1) KR101027173B1 (en)
CN (1) CN101443912B (en)
AT (1) AT544182T (en)
TW (1) TWI397999B (en)
WO (1) WO2007019023A2 (en)

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Also Published As

Publication number Publication date
EP1920467A2 (en) 2008-05-14
TW200717805A (en) 2007-05-01
WO2007019023A2 (en) 2007-02-15
TWI397999B (en) 2013-06-01
US8129773B2 (en) 2012-03-06
CN101443912A (en) 2009-05-27
KR20080030110A (en) 2008-04-03
US8524547B2 (en) 2013-09-03
US20080087968A1 (en) 2008-04-17
EP1920467A4 (en) 2011-03-02
KR101027173B1 (en) 2011-04-05
US20070029624A1 (en) 2007-02-08
EP1920467B1 (en) 2012-02-01
JP5220604B2 (en) 2013-06-26
US7348642B2 (en) 2008-03-25
US20080124868A1 (en) 2008-05-29
US8106439B2 (en) 2012-01-31
WO2007019023A3 (en) 2008-11-13
CN101443912B (en) 2011-03-23
JP2009503893A (en) 2009-01-29
US20120129304A1 (en) 2012-05-24

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