AT541309T - System for modifying small structures - Google Patents

System for modifying small structures

Info

Publication number
AT541309T
AT541309T AT05075796T AT05075796T AT541309T AT 541309 T AT541309 T AT 541309T AT 05075796 T AT05075796 T AT 05075796T AT 05075796 T AT05075796 T AT 05075796T AT 541309 T AT541309 T AT 541309T
Authority
AT
Austria
Prior art keywords
system
small structures
modifying small
modifying
structures
Prior art date
Application number
AT05075796T
Other languages
German (de)
Inventor
George Y Gu
Neil J Bassom
Thomas J Gannon
Kun Liu
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US56170104P priority Critical
Priority to US11/081,934 priority patent/US7674706B2/en
Application filed by Fei Co filed Critical Fei Co
Publication of AT541309T publication Critical patent/AT541309T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/66Electroplating: Baths therefor from melts
    • C25D3/665Electroplating: Baths therefor from melts from ionic liquids
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/14Etching locally
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
AT05075796T 2004-04-13 2005-04-07 System for modifying small structures AT541309T (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US56170104P true 2004-04-13 2004-04-13
US11/081,934 US7674706B2 (en) 2004-04-13 2005-03-16 System for modifying small structures using localized charge transfer mechanism to remove or deposit material

Publications (1)

Publication Number Publication Date
AT541309T true AT541309T (en) 2012-01-15

Family

ID=34938141

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05075796T AT541309T (en) 2004-04-13 2005-04-07 System for modifying small structures

Country Status (6)

Country Link
US (2) US7674706B2 (en)
EP (1) EP1610377B1 (en)
JP (1) JP5285833B2 (en)
KR (3) KR20060092786A (en)
AT (1) AT541309T (en)
TW (2) TWI411043B (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880144B2 (en) * 2006-01-20 2011-02-01 Juridical Foundation Osaka Industrial Promotion Organization c/o Mydome Osaka Liquid medium for preventing charge-up in electron microscope and method of observing sample using the same
CN102124553A (en) * 2006-08-01 2011-07-13 Nxp股份有限公司 Process for fabricating an integrated electronic circuit incorporating a process requiring a voltage threshold between a metal layer and a substrate
JP5181105B2 (en) * 2007-03-02 2013-04-10 株式会社日立ハイテクサイエンス Method for forming corrected wiring of integrated circuit
US8278220B2 (en) * 2008-08-08 2012-10-02 Fei Company Method to direct pattern metals on a substrate
EP2199434A1 (en) 2008-12-19 2010-06-23 FEI Company Method for forming microscopic structures on a substrate
US8377722B2 (en) * 2010-02-10 2013-02-19 International Business Machines Corporation Methods of forming structures with a focused ion beam for use in atomic force probing and structures for use in atomic force probing
US8853078B2 (en) 2011-01-30 2014-10-07 Fei Company Method of depositing material
US9090973B2 (en) 2011-01-31 2015-07-28 Fei Company Beam-induced deposition of low-resistivity material
US8986409B2 (en) 2011-06-30 2015-03-24 Saint-Gobain Ceramics & Plastics, Inc. Abrasive articles including abrasive particles of silicon nitride
EP2739770A4 (en) * 2011-08-02 2015-06-03 Massachusetts Inst Technology Tuning nano-scale grain size distribution in multilayered alloys electrodeposited using ionic solutions, including a1-mn and similar alloys
US9255339B2 (en) 2011-09-19 2016-02-09 Fei Company Localized, in-vacuum modification of small structures
EP2760639A4 (en) 2011-09-26 2015-09-30 Saint Gobain Ceramics Abrasive articles including abrasive particulate materials, coated abrasives using the abrasive particulate materials and methods of forming
KR20170100672A (en) 2011-12-30 2017-09-04 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Shaped abrasive particle and method of forming same
US8840696B2 (en) 2012-01-10 2014-09-23 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particles having particular shapes and methods of forming such particles
CA2860755C (en) 2012-01-10 2018-01-30 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particles having complex shapes and methods of forming same
EP2852473A4 (en) 2012-05-23 2016-05-25 Saint Gobain Ceramics Shaped abrasive particles and methods of forming same
KR20150023034A (en) 2012-06-29 2015-03-04 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Abrasive particles having particular shapes and methods of forming such particles
CN104822494B (en) 2012-10-15 2017-11-28 圣戈班磨料磨具有限公司 The method of abrasive particle and this particle of formation with given shape
JP2014107469A (en) * 2012-11-29 2014-06-09 Tokyo Electron Ltd Semiconductor device manufacturing method and manufacturing apparatus
US9044781B2 (en) 2012-12-04 2015-06-02 Fei Company Microfluidics delivery systems
EP2938459A4 (en) 2012-12-31 2016-12-28 Saint-Gobain Ceram & Plastics Inc Particulate materials and methods of forming same
JP6155384B2 (en) 2013-03-29 2017-06-28 サンーゴバン アブレイシブズ,インコーポレイティド Abrasive particles having a particular shape and method for forming such particles
TW201502263A (en) 2013-06-28 2015-01-16 Saint Gobain Ceramics Abrasive article including shaped abrasive particles
JP2016538149A (en) 2013-09-30 2016-12-08 サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド Shaped abrasive particles and method for forming shaped abrasive particles
WO2015065518A1 (en) * 2013-11-04 2015-05-07 Aerojet Rocketdyne, Inc. Ground based systems and methods for testing reaction thrusters
CN106029301B (en) 2013-12-31 2018-09-18 圣戈班磨料磨具有限公司 Abrasive article including shaping abrasive grain
US9771507B2 (en) 2014-01-31 2017-09-26 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particle including dopant material and method of forming same
KR101884178B1 (en) 2014-04-14 2018-08-02 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Abrasive article including shaped abrasive particles
WO2015184355A1 (en) 2014-05-30 2015-12-03 Saint-Gobain Abrasives, Inc. Method of using an abrasive article including shaped abrasive particles
US9707529B2 (en) 2014-12-23 2017-07-18 Saint-Gobain Ceramics & Plastics, Inc. Composite shaped abrasive particles and method of forming same
US9914864B2 (en) 2014-12-23 2018-03-13 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particles and method of forming same
US9676981B2 (en) 2014-12-24 2017-06-13 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particle fractions and method of forming same
EP3043372B1 (en) * 2015-01-12 2017-01-04 Fei Company Method of modifying a sample surface layer from a microscopic sample
TWI634200B (en) 2015-03-31 2018-09-01 聖高拜磨料有限公司 Fixed abrasive articles and methods of forming same
CN107636109A (en) 2015-03-31 2018-01-26 圣戈班磨料磨具有限公司 Fixed abrasive articles and its forming method

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3408274A (en) * 1965-07-29 1968-10-29 Du Pont Electrolytic method of adjusting the resistance of palladium glaze resistors
DE1812130C3 (en) * 1968-12-02 1975-01-16 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm
JPS62281349A (en) * 1986-05-29 1987-12-07 Seiko Instr & Electronics Ltd Formation of metallic pattern film and apparatus therefor
JPS63210845A (en) * 1987-02-27 1988-09-01 Hitachi Ltd Method for correcting faulty part
JP2733244B2 (en) * 1988-04-07 1998-03-30 株式会社日立製作所 Wiring formation method
US4952290A (en) * 1989-03-16 1990-08-28 Amp Incorporated Waste water treatment and recovery system
US5104684A (en) * 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
JP3332439B2 (en) * 1993-01-26 2002-10-07 株式会社東芝 Analytical sample preparation apparatus and methods of use thereof
JP3254048B2 (en) 1993-06-30 2002-02-04 セイコーインスツルメンツ株式会社 Metal pattern film forming process
WO1996000803A1 (en) * 1994-06-28 1996-01-11 Fei Company Charged particle deposition of electrically insulating films
JP3523346B2 (en) * 1994-11-11 2004-04-26 株式会社ルネサステクノロジ Wiring correction method in semiconductor device
JP4176159B2 (en) * 1997-12-08 2008-11-05 エフ イー アイ カンパニ Environmentally controlled SEM using magnetic field for improved secondary electron detection
CA2348002A1 (en) * 1998-10-27 2000-05-04 Malcolm W. Mcgeoch Biological ion channels in nanofabricated detectors
JP2000232078A (en) * 1999-02-10 2000-08-22 Toshiba Corp Plating method and apparatus
US6319831B1 (en) * 1999-03-18 2001-11-20 Taiwan Semiconductor Manufacturing Company Gap filling by two-step plating
JP3541931B2 (en) * 1999-05-17 2004-07-14 富士ゼロックス株式会社 Electrodeposition film forming method, electrode forming method and electrodeposition film forming apparatus
GB9930719D0 (en) * 1999-12-24 2000-02-16 Central Research Lab Ltd Apparatus for and method of making electrical measurements on an object in a m edium
US6867448B1 (en) * 2000-08-31 2005-03-15 Micron Technology, Inc. Electro-mechanically polished structure
US6693358B2 (en) * 2000-10-23 2004-02-17 Matsushita Electric Industrial Co., Ltd. Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device
US20020074494A1 (en) * 2000-12-15 2002-06-20 Lundquist Theodore R. Precise, in-situ endpoint detection for charged particle beam processing
JP2002217287A (en) * 2001-01-17 2002-08-02 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof
US6696360B2 (en) * 2001-03-15 2004-02-24 Micron Technology, Inc. Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
US6670717B2 (en) * 2001-10-15 2003-12-30 International Business Machines Corporation Structure and method for charge sensitive electrical devices
KR100465063B1 (en) * 2002-04-01 2005-01-06 주식회사 하이닉스반도체 Method for manufacturing metal interconnection layer of semiconductor device
US6974768B1 (en) * 2003-01-15 2005-12-13 Novellus Systems, Inc. Methods of providing an adhesion layer for adhesion of barrier and/or seed layers to dielectric films
JP2004221449A (en) * 2003-01-17 2004-08-05 Sumitomo Bakelite Co Ltd Multilayer wiring board and its manufacturing method
US7087927B1 (en) * 2003-07-22 2006-08-08 National Semiconductor Corporation Semiconductor die with an editing structure

Also Published As

Publication number Publication date
EP1610377A3 (en) 2009-04-29
TWI493625B (en) 2015-07-21
US20100151679A1 (en) 2010-06-17
US7674706B2 (en) 2010-03-09
KR20060092786A (en) 2006-08-23
KR101290681B1 (en) 2013-07-31
TW200608492A (en) 2006-03-01
JP2005303319A (en) 2005-10-27
JP5285833B2 (en) 2013-09-11
US20050227484A1 (en) 2005-10-13
KR20130032889A (en) 2013-04-02
KR20120002503A (en) 2012-01-05
US8163641B2 (en) 2012-04-24
EP1610377B1 (en) 2012-01-11
EP1610377A2 (en) 2005-12-28
TW201342479A (en) 2013-10-16
KR101290561B1 (en) 2013-08-07
TWI411043B (en) 2013-10-01

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