AT539447T - Method for two-layer hdp cvd and pe-cvd coating layer in high-developed beol connecting structures - Google Patents

Method for two-layer hdp cvd and pe-cvd coating layer in high-developed beol connecting structures

Info

Publication number
AT539447T
AT539447T AT02784578T AT02784578T AT539447T AT 539447 T AT539447 T AT 539447T AT 02784578 T AT02784578 T AT 02784578T AT 02784578 T AT02784578 T AT 02784578T AT 539447 T AT539447 T AT 539447T
Authority
AT
Austria
Prior art keywords
cvd
layer
beol
pe
developed
Prior art date
Application number
AT02784578T
Other languages
German (de)
Inventor
Tze-Chiang Chen
Brett Engel
John Fitzsimmons
Terence Kane
Naftali Lustig
Ann Mcdonald
Vincent Mcgahay
Soon-Cheon Seo
Anthony Stamper
Yun Wang
Erdem Kaltalioglu
Original Assignee
Ibm
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/047,964 priority Critical patent/US20030134499A1/en
Application filed by Ibm, Infineon Technologies Ag filed Critical Ibm
Priority to PCT/US2002/037758 priority patent/WO2003060983A1/en
Publication of AT539447T publication Critical patent/AT539447T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832Multiple layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329Insulating materials
    • H01L23/53295Stacked insulating layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226Via connections in a multilevel interconnection structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
AT02784578T 2002-01-15 2002-11-22 Method for two-layer hdp cvd and pe-cvd coating layer in high-developed beol connecting structures AT539447T (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/047,964 US20030134499A1 (en) 2002-01-15 2002-01-15 Bilayer HDP CVD / PE CVD cap in advanced BEOL interconnect structures and method thereof
PCT/US2002/037758 WO2003060983A1 (en) 2002-01-15 2002-11-22 Bilayer hdp cvd / pe cvd cap in advanced beol interconnect structures and method thereof

Publications (1)

Publication Number Publication Date
AT539447T true AT539447T (en) 2012-01-15

Family

ID=21952011

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02784578T AT539447T (en) 2002-01-15 2002-11-22 Method for two-layer hdp cvd and pe-cvd coating layer in high-developed beol connecting structures

Country Status (11)

Country Link
US (3) US20030134499A1 (en)
EP (1) EP1470580B1 (en)
JP (1) JP4475629B2 (en)
KR (1) KR100569036B1 (en)
CN (1) CN100461352C (en)
AT (1) AT539447T (en)
AU (1) AU2002346512A1 (en)
IL (2) IL162435D0 (en)
MY (1) MY134796A (en)
TW (1) TWI246117B (en)
WO (1) WO2003060983A1 (en)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100389929B1 (en) * 2001-07-28 2003-07-04 삼성전자주식회사 SOI device having trench isolation and method for manufacturing the same
JP2004014841A (en) * 2002-06-07 2004-01-15 Fujitsu Ltd Semiconductor device and its manufacturing method
US6917108B2 (en) * 2002-11-14 2005-07-12 International Business Machines Corporation Reliable low-k interconnect structure with hybrid dielectric
JP4086673B2 (en) * 2003-02-04 2008-05-14 Necエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
US6873057B2 (en) * 2003-02-14 2005-03-29 United Microelectrtonics Corp. Damascene interconnect with bi-layer capping film
US7074527B2 (en) * 2003-09-23 2006-07-11 Freescale Semiconductor, Inc. Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same
US7176571B2 (en) * 2004-01-08 2007-02-13 Taiwan Semiconductor Manufacturing Company Nitride barrier layer to prevent metal (Cu) leakage issue in a dual damascene structure
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
WO2006001356A1 (en) * 2004-06-24 2006-01-05 Nec Corporation Semiconductor device and method for manufacturing same
US20060281299A1 (en) * 2004-08-18 2006-12-14 Jei-Ming Chen Method of fabricating silicon carbide-capped copper damascene interconnect
US20060040490A1 (en) * 2004-08-18 2006-02-23 Jei-Ming Chen Method of fabricating silicon carbide-capped copper damascene interconnect
US7176119B2 (en) * 2004-09-20 2007-02-13 International Business Machines Corporation Method of fabricating copper damascene and dual damascene interconnect wiring
US7405481B2 (en) * 2004-12-03 2008-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Glue layer for adhesion improvement between conductive line and etch stop layer in an integrated circuit chip
US20060138668A1 (en) * 2004-12-27 2006-06-29 Hung-Wen Su Passivation structure for semiconductor devices
US20060264042A1 (en) * 2005-05-20 2006-11-23 Texas Instruments, Incorporated Interconnect structure including a silicon oxycarbonitride layer
US7179760B2 (en) * 2005-05-27 2007-02-20 International Buisness Machines Corporation Bilayer cap structure including HDP/bHDP films for conductive metallization and method of making same
DE102005038698A1 (en) * 2005-07-08 2007-01-18 Lumitech Produktion Und Entwicklung Gmbh Optoelectronic components with adhesion promoter
US7563704B2 (en) * 2005-09-19 2009-07-21 International Business Machines Corporation Method of forming an interconnect including a dielectric cap having a tensile stress
US20070080455A1 (en) * 2005-10-11 2007-04-12 International Business Machines Corporation Semiconductors and methods of making
US20070085208A1 (en) * 2005-10-13 2007-04-19 Feng-Yu Hsu Interconnect structure
DE102005052053B4 (en) 2005-10-31 2007-12-06 Advanced Micro Devices, Inc., Sunnyvale A method of making an etch stop layer for a metallization layer having improved etch selectivity and entrapment behavior
US7253100B2 (en) * 2005-11-17 2007-08-07 International Business Machines Corporation Reducing damage to ulk dielectric during cross-linked polymer removal
US7863183B2 (en) 2006-01-18 2011-01-04 International Business Machines Corporation Method for fabricating last level copper-to-C4 connection with interfacial cap structure
US7972954B2 (en) * 2006-01-24 2011-07-05 Infineon Technologies Ag Porous silicon dielectric
US7528066B2 (en) * 2006-03-01 2009-05-05 International Business Machines Corporation Structure and method for metal integration
US20070210421A1 (en) * 2006-03-13 2007-09-13 Texas Instruments Inc. Semiconductor device fabricated using a carbon-containing film as a contact etch stop layer
US7456099B2 (en) * 2006-05-25 2008-11-25 International Business Machines Corporation Method of forming a structure for reducing lateral fringe capacitance in semiconductor devices
US20080014739A1 (en) * 2006-06-28 2008-01-17 Texas Instruments Incorporated Silicon nitride/oxygen doped silicon carbide etch stop bi-layer for improved interconnect reliability
US7459388B2 (en) * 2006-09-06 2008-12-02 Samsung Electronics Co., Ltd. Methods of forming dual-damascene interconnect structures using adhesion layers having high internal compressive stresses
US7749892B2 (en) * 2006-11-29 2010-07-06 International Business Machines Corporation Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices
JP5389352B2 (en) 2007-12-06 2014-01-15 ローム株式会社 Semiconductor device
US8212337B2 (en) * 2008-01-10 2012-07-03 International Business Machines Corporation Advanced low k cap film formation process for nano electronic devices
CN102132398B (en) * 2008-03-21 2015-01-28 哈佛学院院长等 Self-aligned barrier layers for interconnects
US8026166B2 (en) * 2008-08-12 2011-09-27 International Business Machines Corporation Interconnect structures comprising capping layers with low dielectric constants and methods of making the same
DE102008044988A1 (en) * 2008-08-29 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Use of a capping layer in metallization systems of semiconductor devices as CMP and etch stop layer
US8563095B2 (en) * 2010-03-15 2013-10-22 Applied Materials, Inc. Silicon nitride passivation layer for covering high aspect ratio features
JP2011249678A (en) * 2010-05-28 2011-12-08 Elpida Memory Inc Semiconductor device and method for manufacturing the same
CN102915952B (en) * 2011-08-04 2014-11-05 中芯国际集成电路制造(上海)有限公司 Manufacturing method for semiconductor device
CN102956539B (en) * 2011-08-17 2015-10-21 中芯国际集成电路制造(上海)有限公司 Copper interconnection structure and manufacture method thereof
CN103258779B (en) * 2012-02-17 2015-05-20 中芯国际集成电路制造(上海)有限公司 Copper interconnection structure and manufacturing method thereof
US20140183720A1 (en) * 2012-12-31 2014-07-03 International Business Machines Corporation Methods of manufacturing integrated circuits having a compressive nitride layer
WO2014149263A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Adhesion improvement between cvd dielectric film and cu substrate
CN104752332A (en) * 2013-12-31 2015-07-01 中芯国际集成电路制造(上海)有限公司 Interconnection structure and forming method thereof
US9601387B2 (en) * 2014-01-03 2017-03-21 Globalfoundries Inc. Method of making threshold voltage tuning using self-aligned contact cap
CN105336680B (en) * 2014-08-13 2020-02-11 中芯国际集成电路制造(上海)有限公司 Semiconductor device, manufacturing method thereof and electronic device
CN107492506B (en) * 2016-06-12 2020-01-03 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method
JP2017226894A (en) * 2016-06-24 2017-12-28 東京エレクトロン株式会社 Plasma film deposition method and plasma film deposition apparatus
US20180308801A1 (en) * 2017-04-20 2018-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having an extra low-k dielectric layer and method of forming the same
KR20190067455A (en) 2017-12-07 2019-06-17 삼성전자주식회사 Semiconductor device

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2654952B2 (en) 1987-10-26 1997-09-17 株式会社トーキン Rare earth permanent magnet material and the manufacturing method thereof
US6080526A (en) * 1997-03-24 2000-06-27 Alliedsignal Inc. Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
JP3463979B2 (en) * 1997-07-08 2003-11-05 富士通株式会社 Method for manufacturing semiconductor device
TW374946B (en) 1997-12-03 1999-11-21 United Microelectronics Corp Definition of structure of dielectric layer patterns and the manufacturing method
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6291334B1 (en) 1997-12-19 2001-09-18 Applied Materials, Inc. Etch stop layer for dual damascene process
US6184073B1 (en) * 1997-12-23 2001-02-06 Motorola, Inc. Process for forming a semiconductor device having an interconnect or conductive film electrically insulated from a conductive member or region
US6162583A (en) 1998-03-20 2000-12-19 Industrial Technology Research Institute Method for making intermetal dielectrics (IMD) on semiconductor integrated circuits using low dielectric constant spin-on polymers
US6265779B1 (en) * 1998-08-11 2001-07-24 International Business Machines Corporation Method and material for integration of fuorine-containing low-k dielectrics
US6218732B1 (en) 1998-09-15 2001-04-17 Texas Instruments Incorporated Copper bond pad process
US6071809A (en) 1998-09-25 2000-06-06 Rockwell Semiconductor Systems, Inc. Methods for forming high-performing dual-damascene interconnect structures
US6225210B1 (en) 1998-12-09 2001-05-01 Advanced Micro Devices, Inc. High density capping layers with improved adhesion to copper interconnects
US6153523A (en) 1998-12-09 2000-11-28 Advanced Micro Devices, Inc. Method of forming high density capping layers for copper interconnects with improved adhesion
US6255217B1 (en) 1999-01-04 2001-07-03 International Business Machines Corporation Plasma treatment to enhance inorganic dielectric adhesion to copper
TW400619B (en) 1999-03-05 2000-08-01 United Microelectronics Corp The manufacture method of dual damascene structure
US6127238A (en) 1999-03-11 2000-10-03 Chartered Semiconductor Manufacturing Ltd. Plasma enhanced chemical vapor deposited (PECVD) silicon nitride barrier layer for high density plasma chemical vapor deposited (HDP-CVD) dielectric layer
US6503818B1 (en) * 1999-04-02 2003-01-07 Taiwan Semiconductor Manufacturing Company Delamination resistant multi-layer composite dielectric layer employing low dielectric constant dielectric material
US6235633B1 (en) 1999-04-12 2001-05-22 Taiwan Semiconductor Manufacturing Company Method for making tungsten metal plugs in a polymer low-K intermetal dielectric layer using an improved two-step chemical/mechanical polishing process
US6043152A (en) 1999-05-14 2000-03-28 Taiwan Semiconductor Manufacturing Company Method to reduce metal damage in the HDP-CVD process by using a sacrificial dielectric film
JP3353743B2 (en) * 1999-05-18 2002-12-03 日本電気株式会社 Semiconductor device and manufacturing method thereof
US6274514B1 (en) * 1999-06-21 2001-08-14 Taiwan Semiconductor Manufacturing Company HDP-CVD method for forming passivation layers with enhanced adhesion
US6099701A (en) 1999-06-28 2000-08-08 Taiwan Semiconductor Manufacturing Company AlCu electromigration (EM) resistance
JP2001015480A (en) 1999-06-29 2001-01-19 Tokyo Electron Ltd Method for treating substrate
JP4554011B2 (en) 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor integrated circuit device
US6107188A (en) 1999-08-16 2000-08-22 Taiwan Semiconductor Manufacturing Company Passivation method for copper process
US6211061B1 (en) 1999-10-29 2001-04-03 Taiwan Semiconductor Manufactuirng Company Dual damascene process for carbon-based low-K materials
JP3430091B2 (en) 1999-12-01 2003-07-28 Necエレクトロニクス株式会社 Etching mask, method of forming contact hole using etching mask, and semiconductor device formed by the method
JP2001160558A (en) 1999-12-02 2001-06-12 Nec Corp Method and apparatus for manufacturing semiconductor device
US6475925B1 (en) * 2000-04-10 2002-11-05 Motorola, Inc. Reduced water adsorption for interlayer dielectric
US6441491B1 (en) * 2000-10-25 2002-08-27 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same
US6528432B1 (en) * 2000-12-05 2003-03-04 Advanced Micro Devices, Inc. H2-or H2/N2-plasma treatment to prevent organic ILD degradation
US6809398B2 (en) * 2000-12-14 2004-10-26 Actel Corporation Metal-to-metal antifuse structure and fabrication method
US6441490B1 (en) * 2000-12-18 2002-08-27 Advanced Micro Devices, Inc. Low dielectric constant stop layer for integrated circuit interconnects

Also Published As

Publication number Publication date
EP1470580A4 (en) 2005-07-20
US20030134499A1 (en) 2003-07-17
CN1672250A (en) 2005-09-21
US6914320B2 (en) 2005-07-05
KR20040074675A (en) 2004-08-25
IL162435A (en) 2008-11-26
TWI246117B (en) 2005-12-21
CN100461352C (en) 2009-02-11
US20040173907A1 (en) 2004-09-09
TW200401339A (en) 2004-01-16
US20040115873A1 (en) 2004-06-17
AU2002346512A1 (en) 2003-07-30
EP1470580A1 (en) 2004-10-27
JP2005515634A (en) 2005-05-26
WO2003060983A1 (en) 2003-07-24
EP1470580B1 (en) 2011-12-28
IL162435D0 (en) 2005-11-20
JP4475629B2 (en) 2010-06-09
US6887783B2 (en) 2005-05-03
MY134796A (en) 2007-12-31
KR100569036B1 (en) 2006-04-10

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