AT535011T - Method for producing a semiconductor construction element with differently distinctive areas - Google Patents

Method for producing a semiconductor construction element with differently distinctive areas

Info

Publication number
AT535011T
AT535011T AT07702893T AT07702893T AT535011T AT 535011 T AT535011 T AT 535011T AT 07702893 T AT07702893 T AT 07702893T AT 07702893 T AT07702893 T AT 07702893T AT 535011 T AT535011 T AT 535011T
Authority
AT
Austria
Prior art keywords
differently
producing
method
construction element
semiconductor construction
Prior art date
Application number
AT07702893T
Other languages
German (de)
Inventor
Peter Fath
Ihor Melnyk
Original Assignee
Gp Solar Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102006003283A priority Critical patent/DE102006003283A1/en
Application filed by Gp Solar Gmbh filed Critical Gp Solar Gmbh
Priority to PCT/EP2007/000463 priority patent/WO2007082760A1/en
Publication of AT535011T publication Critical patent/AT535011T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators
AT07702893T 2006-01-23 2007-01-19 Method for producing a semiconductor construction element with differently distinctive areas AT535011T (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102006003283A DE102006003283A1 (en) 2006-01-23 2006-01-23 Fabricating method for semiconductor component e.g. solar cell, involves forming diffusion-inhibiting layer, partial removal of layer in highly doped region, formation of dopant source and diffusion of dopant from dopant source
PCT/EP2007/000463 WO2007082760A1 (en) 2006-01-23 2007-01-19 Method for fabricating a semiconductor component having regions with different levels of doping

Publications (1)

Publication Number Publication Date
AT535011T true AT535011T (en) 2011-12-15

Family

ID=37895817

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07702893T AT535011T (en) 2006-01-23 2007-01-19 Method for producing a semiconductor construction element with differently distinctive areas

Country Status (7)

Country Link
US (1) US20090017606A1 (en)
EP (1) EP1977442B1 (en)
KR (1) KR20080097413A (en)
CN (1) CN101379595B (en)
AT (1) AT535011T (en)
DE (1) DE102006003283A1 (en)
WO (1) WO2007082760A1 (en)

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KR20070099840A (en) * 2006-04-05 2007-10-10 삼성에스디아이 주식회사 Solar cell and manufacturing method of the same
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US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
US20090239363A1 (en) * 2008-03-24 2009-09-24 Honeywell International, Inc. Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes
DE102008017647A1 (en) * 2008-04-04 2009-10-29 Centrotherm Photovoltaics Technology Gmbh Process for producing a solar cell with a two-stage doping
DE102008019402A1 (en) * 2008-04-14 2009-10-15 Gebr. Schmid Gmbh & Co. Process for the selective doping of silicon and silicon substrate treated therewith
KR101008656B1 (en) 2008-05-22 2011-01-25 한국표준과학연구원 Reference material of spatial resolution for 2-dimensional dopant imaging
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
TWI371115B (en) * 2008-09-16 2012-08-21 Gintech Energy Corp One-step diffusion method for fabricating a differential doped solar cell
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
DE102008056456A1 (en) * 2008-11-07 2010-06-17 Centrotherm Photovoltaics Technology Gmbh Process for producing a solar cell with a two-stage doping
US7820532B2 (en) * 2008-12-29 2010-10-26 Honeywell International Inc. Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
JPWO2010090090A1 (en) * 2009-02-05 2012-08-09 シャープ株式会社 Semiconductor device manufacturing method and semiconductor device
DE102009008371A1 (en) * 2009-02-11 2010-08-12 Schott Solar Ag Integral process from wafer fabrication to module production for the production of wafers, solar cells and solar modules
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US20100212735A1 (en) * 2009-02-25 2010-08-26 Pin-Sheng Wang Solar cell and method for fabricating the same
DE102009021971A1 (en) * 2009-05-19 2010-11-25 Ersol Solar Energy Ag Method for manufacturing solar cell utilized for power generation, involves completely covering surface of substrates by intermediate layer or secondary product till completion of diffusion process
KR101160115B1 (en) * 2009-05-29 2012-06-26 주식회사 효성 A fabricating method of buried contact solar cell
US8138070B2 (en) * 2009-07-02 2012-03-20 Innovalight, Inc. Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles
US8420517B2 (en) * 2009-07-02 2013-04-16 Innovalight, Inc. Methods of forming a multi-doped junction with silicon-containing particles
US8163587B2 (en) 2009-07-02 2012-04-24 Innovalight, Inc. Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles
US20110003466A1 (en) * 2009-07-02 2011-01-06 Innovalight, Inc. Methods of forming a multi-doped junction with porous silicon
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8148176B2 (en) * 2009-08-20 2012-04-03 Innovalight, Inc. Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate
DE102009053543A1 (en) * 2009-11-18 2011-05-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Process for the treatment of a semiconductor structure
KR101360658B1 (en) * 2009-12-17 2014-02-14 현대중공업 주식회사 Method for forming selective emitter in a solar cell
KR101027829B1 (en) * 2010-01-18 2011-04-07 현대중공업 주식회사 Method for fabricating back contact solar cell
TWI385811B (en) * 2010-01-18 2013-02-11 Tainergy Tech Co Ltd Solar cell manufacturing method
US20110183504A1 (en) * 2010-01-25 2011-07-28 Innovalight, Inc. Methods of forming a dual-doped emitter on a substrate with an inline diffusion apparatus
WO2012012167A1 (en) 2010-06-30 2012-01-26 Innovalight, Inc Methods of forming a floating junction on a solar cell with a particle masking layer
CN101997058A (en) * 2010-09-03 2011-03-30 苏州阿特斯阳光电力科技有限公司;阿特斯(中国)投资有限公司 Method for preparing selective emitter structure of crystalline silicon solar battery
US8658454B2 (en) * 2010-09-20 2014-02-25 Sunpower Corporation Method of fabricating a solar cell
TWI431797B (en) 2010-10-19 2014-03-21 Ind Tech Res Inst Solar cell with selective emitter and fabrications thereof
DE102010060303A1 (en) * 2010-11-02 2012-05-03 Solarworld Innovations Gmbh Process for producing a solar cell
KR20120064364A (en) * 2010-12-09 2012-06-19 삼성전자주식회사 Method for manufacturing the solar cell
CN102088046A (en) * 2010-12-18 2011-06-08 广东爱康太阳能科技有限公司 Technology for manufacturing selective emitter electrode of crystalline silicon solar cell through single-step diffusion
NL2006160C2 (en) * 2011-02-08 2012-08-09 Tsc Solar B V A method of manufacturing a solar cell and a solar cell.
WO2012108766A2 (en) * 2011-02-08 2012-08-16 Tsc Solar B.V. A method of manufactering a solar cell and a solar cell
KR101724005B1 (en) 2011-04-29 2017-04-07 삼성에스디아이 주식회사 Solar cell and manufacturing method thereof
JP2013026344A (en) * 2011-07-19 2013-02-04 Hitachi Chem Co Ltd Manufacturing method of n-type diffusion layer, manufacturing method of solar cell element, and solar cell element
JP2013026343A (en) * 2011-07-19 2013-02-04 Hitachi Chem Co Ltd Manufacturing method of p-type diffusion layer, manufacturing method of solar cell element, and solar cell element
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
CN102637771A (en) * 2012-03-27 2012-08-15 山东力诺太阳能电力股份有限公司 Method for manufacturing no-dead-layer emitter of solar cell
CN102629647A (en) * 2012-05-03 2012-08-08 上海联孚新能源科技有限公司 Manufacture method of solar battery
CN102956748A (en) * 2012-11-12 2013-03-06 国电光伏(江苏)有限公司 Diffusion method for one-step formation of selective emitter of solar cell
CN103066164A (en) * 2013-01-31 2013-04-24 英利集团有限公司 N-type solar battery and manufacturing method thereof
TWI496305B (en) * 2014-01-10 2015-08-11 Motech Ind Inc Solar cell and manufacturing method thereof
CN103985785A (en) * 2014-04-24 2014-08-13 上饶光电高科技有限公司 Oxidation technology for improving photoelectric conversion efficiency of solar battery

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Also Published As

Publication number Publication date
WO2007082760A1 (en) 2007-07-26
EP1977442A1 (en) 2008-10-08
EP1977442B1 (en) 2011-11-23
CN101379595A (en) 2009-03-04
DE102006003283A1 (en) 2007-07-26
KR20080097413A (en) 2008-11-05
CN101379595B (en) 2011-05-11
US20090017606A1 (en) 2009-01-15

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