AT511206T - Ladungsträgerteilchenstrahlsystem - Google Patents

Ladungsträgerteilchenstrahlsystem

Info

Publication number
AT511206T
AT511206T AT05075600T AT05075600T AT511206T AT 511206 T AT511206 T AT 511206T AT 05075600 T AT05075600 T AT 05075600T AT 05075600 T AT05075600 T AT 05075600T AT 511206 T AT511206 T AT 511206T
Authority
AT
Austria
Prior art keywords
ladungsträgerteilchenstrahlsystem
Prior art date
Application number
AT05075600T
Other languages
German (de)
Inventor
Diane K Stewart
Ralph W Knowles
Brian T Kimball
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
Priority to US10/801,981 priority Critical patent/US6979822B1/en
Application filed by Fei Co filed Critical Fei Co
Publication of AT511206T publication Critical patent/AT511206T/en
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34838899&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AT511206(T) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004Charge control of objects or beams
    • H01J2237/0041Neutralising arrangements
    • H01J2237/0044Neutralising arrangements of objects being observed or treated
    • H01J2237/0045Neutralising arrangements of objects being observed or treated using secondary electrons
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31735Direct-write microstructures
    • H01J2237/31737Direct-write microstructures using ions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31742Etching microareas for repairing masks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31793Problems associated with lithography
    • H01J2237/31798Problems associated with lithography detecting pattern defects
AT05075600T 2002-09-18 2005-03-11 Ladungsträgerteilchenstrahlsystem AT511206T (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/801,981 US6979822B1 (en) 2002-09-18 2004-03-16 Charged particle beam system

Publications (1)

Publication Number Publication Date
AT511206T true AT511206T (en) 2011-06-15

Family

ID=34838899

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05075600T AT511206T (en) 2002-09-18 2005-03-11 Ladungsträgerteilchenstrahlsystem

Country Status (4)

Country Link
US (1) US6979822B1 (en)
EP (1) EP1577927B1 (en)
JP (1) JP5586118B2 (en)
AT (1) AT511206T (en)

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PL207238B1 (en) * 2003-10-14 2010-11-30 Politechnika Wrocławska System for detection of secondary and backward scattered electrons for use in scanning electron microscope
GB2411763B (en) * 2004-03-05 2009-02-18 Thermo Electron Corp Flood gun for charge neutralization
US7232997B2 (en) * 2004-04-15 2007-06-19 Nawotec Gmbh Apparatus and method for investigating or modifying a surface with a beam of charged particles
JP5078232B2 (en) * 2005-04-26 2012-11-21 エスアイアイ・ナノテクノロジー株式会社 Composite charged particle beam apparatus and irradiation positioning method therefor
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP4801996B2 (en) * 2006-01-05 2011-10-26 株式会社ニューフレアテクノロジー Sample moving mechanism and charged particle beam drawing apparatus
JP2007212398A (en) * 2006-02-13 2007-08-23 Toshiba Corp Device and method for inspecting substrate
DE602006015768D1 (en) 2006-02-23 2010-09-09 Integrated Circuit Testing Particle beam device with ozone source
JP5053359B2 (en) * 2006-03-31 2012-10-17 エフ・イ−・アイ・カンパニー Improved detector for charged particle beam instruments
TWI311328B (en) * 2006-05-11 2009-06-21 Nat Central Universit Electron microscopy , methods to determine the contact point and the contact of the probe
WO2008006110A2 (en) 2006-07-07 2008-01-10 Sri International Liquid metal wetting of micro-fabricated charged particle emission structures
JP4988308B2 (en) * 2006-11-07 2012-08-01 株式会社日立ハイテクノロジーズ Gas amplification type detector and electron beam application apparatus using the same
WO2008098084A1 (en) * 2007-02-06 2008-08-14 Fei Company High pressure charged particle beam system
JP4691529B2 (en) * 2007-07-20 2011-06-01 株式会社日立ハイテクノロジーズ Charged particle beam apparatus and sample processing observation method
JP5102580B2 (en) * 2007-10-18 2012-12-19 株式会社日立ハイテクノロジーズ Charged particle beam application equipment
US7791020B2 (en) * 2008-03-31 2010-09-07 Fei Company Multistage gas cascade amplifier
JP5246916B2 (en) * 2008-04-16 2013-07-24 ギガフォトン株式会社 Ion recovery apparatus and method in EUV light generator
JP5179253B2 (en) * 2008-05-16 2013-04-10 株式会社日立ハイテクノロジーズ Electrode unit and charged particle beam apparatus
WO2010006067A2 (en) * 2008-07-09 2010-01-14 Fei Company Method and apparatus for laser machining
DE102008040426B4 (en) * 2008-07-15 2015-12-24 Carl Zeiss Microscopy Gmbh Method for examining a surface of an object
DE102008064856B3 (en) * 2008-07-15 2017-07-13 Carl Zeiss Microscopy Gmbh Device for examining a surface of an object
DE102008041815A1 (en) 2008-09-04 2010-04-15 Carl Zeiss Nts Gmbh Method for analyzing a sample
US8299432B2 (en) * 2008-11-04 2012-10-30 Fei Company Scanning transmission electron microscope using gas amplification
JP5352262B2 (en) 2009-02-06 2013-11-27 株式会社日立ハイテクノロジーズ Charged particle beam equipment
US9113540B2 (en) 2010-02-19 2015-08-18 Gigaphoton Inc. System and method for generating extreme ultraviolet light
US9265136B2 (en) 2010-02-19 2016-02-16 Gigaphoton Inc. System and method for generating extreme ultraviolet light
JP2012009497A (en) * 2010-06-22 2012-01-12 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of microscopic structure
US9679741B2 (en) 2010-11-09 2017-06-13 Fei Company Environmental cell for charged particle beam system
KR20130126684A (en) 2011-03-04 2013-11-20 가부시키가이샤 히다치 하이테크놀로지즈 Electron-microscope sample holder and sample-observation method
US8476004B2 (en) 2011-06-27 2013-07-02 United Microelectronics Corp. Method for forming photoresist patterns
JP6224710B2 (en) * 2012-07-30 2017-11-01 エフ・イ−・アイ・カンパニー Environment-controlled SEM gas injection system
US8701052B1 (en) 2013-01-23 2014-04-15 United Microelectronics Corp. Method of optical proximity correction in combination with double patterning technique
US8627242B1 (en) 2013-01-30 2014-01-07 United Microelectronics Corp. Method for making photomask layout
US9230812B2 (en) 2013-05-22 2016-01-05 United Microelectronics Corp. Method for forming semiconductor structure having opening
US9478390B2 (en) 2014-06-30 2016-10-25 Fei Company Integrated light optics and gas delivery in a charged particle lens
US9715724B2 (en) 2014-07-29 2017-07-25 Applied Materials Israel Ltd. Registration of CAD data with SEM images
EP3249676B1 (en) 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality

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US4601211A (en) * 1984-12-12 1986-07-22 The Perkin-Elmer Corporation Multi-port valve in a gas collection system and method of using same
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JPH02236939A (en) * 1989-03-09 1990-09-19 Nikon Corp Scanning type electron microscope
JPH03194838A (en) * 1989-12-22 1991-08-26 Sumitomo Metal Ind Ltd Antistatic method and antistatic device used in same method
JP3038901B2 (en) * 1990-11-26 2000-05-08 株式会社ニコン Environmentally controlled scanning electron microscope
JPH05174768A (en) 1991-02-26 1993-07-13 Nikon Corp Scanning electron microscope of environment control type
JP3730263B2 (en) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーションKla Instruments Corporation Apparatus and method for automatic substrate inspection using charged particle beam
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US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
WO1999005506A1 (en) * 1997-07-22 1999-02-04 Hitachi, Ltd. Method and apparatus for preparing samples
AU748781B2 (en) * 1997-12-08 2002-06-13 Fei Company Environmental SEM with a magnetic field for improved secondary electron detection
JP4084427B2 (en) * 1997-12-08 2008-04-30 エフ イー アイ カンパニ Environmentally controlled SEM using multipole field for improved secondary electron detection
EP1068630B1 (en) * 1998-03-10 2005-07-20 Erik Essers Scanning electron microscope
US6525317B1 (en) * 1998-12-30 2003-02-25 Micron Technology Inc. Reduction of charging effect and carbon deposition caused by electron beam devices
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CZ20022105A3 (en) 2002-06-17 2004-02-18 Tescan, S. R. O. Detector of secondary electrons used particularly in a raster electron microscope
JP2004031207A (en) * 2002-06-27 2004-01-29 Canon Inc Electron beam irradiation equipment and scanning electron microscope apparatus

Also Published As

Publication number Publication date
EP1577927B1 (en) 2011-05-25
JP2005268224A (en) 2005-09-29
EP1577927A2 (en) 2005-09-21
JP5586118B2 (en) 2014-09-10
US6979822B1 (en) 2005-12-27
EP1577927A3 (en) 2008-11-26
US20050279934A1 (en) 2005-12-22

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Legal Events

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