AT507320T - Atomic layer deposition system and method for coating of flexible substrates - Google Patents

Atomic layer deposition system and method for coating of flexible substrates

Info

Publication number
AT507320T
AT507320T AT07759411T AT07759411T AT507320T AT 507320 T AT507320 T AT 507320T AT 07759411 T AT07759411 T AT 07759411T AT 07759411 T AT07759411 T AT 07759411T AT 507320 T AT507320 T AT 507320T
Authority
AT
Austria
Prior art keywords
coating
method
layer deposition
atomic layer
deposition system
Prior art date
Application number
AT07759411T
Other languages
German (de)
Inventor
Eric R Dickey
William A Barrow
Original Assignee
Lotus Applied Technology Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US74378606P priority Critical
Application filed by Lotus Applied Technology Llc filed Critical Lotus Applied Technology Llc
Priority to PCT/US2007/064961 priority patent/WO2007112370A1/en
Publication of AT507320T publication Critical patent/AT507320T/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • C23C16/545Apparatus specially adapted for continuous coating for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
AT07759411T 2006-03-26 2007-03-26 Atomic layer deposition system and method for coating of flexible substrates AT507320T (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US74378606P true 2006-03-26 2006-03-26
PCT/US2007/064961 WO2007112370A1 (en) 2006-03-26 2007-03-26 Atomic layer deposition system and method for coating flexible substrates

Publications (1)

Publication Number Publication Date
AT507320T true AT507320T (en) 2011-05-15

Family

ID=38541449

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07759411T AT507320T (en) 2006-03-26 2007-03-26 Atomic layer deposition system and method for coating of flexible substrates

Country Status (9)

Country Link
US (4) US8137464B2 (en)
EP (1) EP2000008B1 (en)
KR (1) KR101314708B1 (en)
CN (1) CN101406108B (en)
AT (1) AT507320T (en)
BR (1) BRPI0709199A2 (en)
DE (1) DE602007014190D1 (en)
ES (1) ES2361661T3 (en)
WO (1) WO2007112370A1 (en)

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Also Published As

Publication number Publication date
EP2000008B1 (en) 2011-04-27
ES2361661T3 (en) 2011-06-21
US20120171371A1 (en) 2012-07-05
KR20080106555A (en) 2008-12-08
WO2007112370A1 (en) 2007-10-04
US8137464B2 (en) 2012-03-20
EP2000008A1 (en) 2008-12-10
BRPI0709199A2 (en) 2011-06-28
DE602007014190D1 (en) 2011-06-09
US9469901B2 (en) 2016-10-18
US20100189900A1 (en) 2010-07-29
US20120219708A1 (en) 2012-08-30
US8202366B2 (en) 2012-06-19
CN101406108A (en) 2009-04-08
EP2000008A4 (en) 2010-05-05
CN101406108B (en) 2011-06-22
KR101314708B1 (en) 2013-10-10
US9238868B2 (en) 2016-01-19
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