AT499705T - Fotodiode and manufacturing method therefor - Google Patents

Fotodiode and manufacturing method therefor

Info

Publication number
AT499705T
AT499705T AT05728685T AT05728685T AT499705T AT 499705 T AT499705 T AT 499705T AT 05728685 T AT05728685 T AT 05728685T AT 05728685 T AT05728685 T AT 05728685T AT 499705 T AT499705 T AT 499705T
Authority
AT
Austria
Prior art keywords
fotodiode
manufacturing method
method therefor
therefor
manufacturing
Prior art date
Application number
AT05728685T
Other languages
German (de)
Inventor
Keishi Oohashi
Tsutomu Ishi
Toshio Baba
Junichi Fujikata
Kikuo Makita
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004111403 priority Critical
Application filed by Nec Corp filed Critical Nec Corp
Priority to PCT/JP2005/006660 priority patent/WO2005098966A1/en
Publication of AT499705T publication Critical patent/AT499705T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
AT05728685T 2004-04-05 2005-04-05 Fotodiode and manufacturing method therefor AT499705T (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004111403 2004-04-05
PCT/JP2005/006660 WO2005098966A1 (en) 2004-04-05 2005-04-05 Photodiode and method for manufacturing same

Publications (1)

Publication Number Publication Date
AT499705T true AT499705T (en) 2011-03-15

Family

ID=35125369

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05728685T AT499705T (en) 2004-04-05 2005-04-05 Fotodiode and manufacturing method therefor

Country Status (8)

Country Link
US (2) US7728366B2 (en)
EP (1) EP1737047B1 (en)
JP (1) JP4336765B2 (en)
KR (1) KR100853067B1 (en)
CN (1) CN1965414B (en)
AT (1) AT499705T (en)
DE (1) DE602005026507D1 (en)
WO (1) WO2005098966A1 (en)

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US8417070B2 (en) * 2009-09-30 2013-04-09 Intel Corporation Waveguide coupled surface plasmon polarition photo detector
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JP5433609B2 (en) * 2011-03-03 2014-03-05 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
KR101293443B1 (en) 2011-08-05 2013-08-05 한양대학교 산학협력단 Photonic Device of using Surface Plasmon
CN102290481B (en) * 2011-09-01 2012-10-31 中国科学院半导体研究所 Silicon detector structure with wide spectral response range and production method thereof
US8941203B2 (en) * 2012-03-01 2015-01-27 Raytheon Company Photodetector with surface plasmon resonance
US9425341B2 (en) * 2012-10-08 2016-08-23 Agency For Science, Technology And Research P-I-N photodiode with dopant diffusion barrier layer
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CN104518835B (en) * 2013-10-08 2019-07-23 中兴通讯股份有限公司 A kind of reception device of visible light communication mimo system
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Also Published As

Publication number Publication date
US20070194357A1 (en) 2007-08-23
CN1965414B (en) 2010-09-29
KR100853067B1 (en) 2008-08-19
KR20070004900A (en) 2007-01-09
US20090176327A1 (en) 2009-07-09
US7883911B2 (en) 2011-02-08
US7728366B2 (en) 2010-06-01
JPWO2005098966A1 (en) 2008-03-06
EP1737047A4 (en) 2008-02-20
EP1737047B1 (en) 2011-02-23
EP1737047A1 (en) 2006-12-27
WO2005098966A1 (en) 2005-10-20
CN1965414A (en) 2007-05-16
JP4336765B2 (en) 2009-09-30
DE602005026507D1 (en) 2011-04-07

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