AT490560T - Method for producing a thin-layer transistor with an oxide semiconductor - Google Patents

Method for producing a thin-layer transistor with an oxide semiconductor

Info

Publication number
AT490560T
AT490560T AT08765059T AT08765059T AT490560T AT 490560 T AT490560 T AT 490560T AT 08765059 T AT08765059 T AT 08765059T AT 08765059 T AT08765059 T AT 08765059T AT 490560 T AT490560 T AT 490560T
Authority
AT
Austria
Prior art keywords
thin
producing
oxide semiconductor
method
layer transistor
Prior art date
Application number
AT08765059T
Other languages
German (de)
Inventor
Hideyuki Omura
Ryo Hayashi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2007145186 priority Critical
Application filed by Canon Kk filed Critical Canon Kk
Priority to PCT/JP2008/060246 priority patent/WO2008149873A1/en
Publication of AT490560T publication Critical patent/AT490560T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
AT08765059T 2007-05-31 2008-05-28 Method for producing a thin-layer transistor with an oxide semiconductor AT490560T (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007145186 2007-05-31
PCT/JP2008/060246 WO2008149873A1 (en) 2007-05-31 2008-05-28 Manufacturing method of thin film transistor using oxide semiconductor

Publications (1)

Publication Number Publication Date
AT490560T true AT490560T (en) 2010-12-15

Family

ID=39816905

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08765059T AT490560T (en) 2007-05-31 2008-05-28 Method for producing a thin-layer transistor with an oxide semiconductor

Country Status (9)

Country Link
US (1) US8193045B2 (en)
EP (1) EP2153468B1 (en)
JP (1) JP5361249B2 (en)
KR (1) KR101092483B1 (en)
CN (1) CN101681928B (en)
AT (1) AT490560T (en)
DE (1) DE602008003796D1 (en)
TW (1) TWI373142B (en)
WO (1) WO2008149873A1 (en)

Families Citing this family (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5319961B2 (en) * 2008-05-30 2013-10-16 富士フイルム株式会社 Manufacturing method of semiconductor device
JP5430248B2 (en) * 2008-06-24 2014-02-26 富士フイルム株式会社 Thin film field effect transistor and display device
JP2010153802A (en) * 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
KR101642384B1 (en) 2008-12-19 2016-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing transistor
TWI549198B (en) * 2008-12-26 2016-09-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US8174021B2 (en) * 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
JP5512144B2 (en) * 2009-02-12 2014-06-04 富士フイルム株式会社 Thin film transistor and manufacturing method thereof
US8278657B2 (en) * 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
JP2010205987A (en) * 2009-03-04 2010-09-16 Sony Corp Thin film transistor, method for manufacturing the same, and display
JP5504008B2 (en) * 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 Semiconductor device
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI489628B (en) * 2009-04-02 2015-06-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
KR101287478B1 (en) * 2009-06-02 2013-07-19 엘지디스플레이 주식회사 Display device having oxide thin film transistor and method of fabricating thereof
WO2011001881A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101645146B1 (en) 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101810699B1 (en) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101805335B1 (en) 2009-06-30 2017-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic equipment
KR101476817B1 (en) * 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including transistor and manufacturing method thereof
KR101073301B1 (en) * 2009-07-15 2011-10-12 삼성모바일디스플레이주식회사 Organic Light emitting Display device and fabrication method thereof
WO2011010545A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20120051727A (en) 2009-07-31 2012-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011013523A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101913995B1 (en) 2009-07-31 2018-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011013502A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN105097946B (en) 2009-07-31 2018-05-08 株式会社半导体能源研究所 Semiconductor device and its manufacture method
TWI582951B (en) * 2009-08-07 2017-05-11 半導體能源研究所股份有限公司 Semiconductor device and phone, watch, and display device comprising the same
TWI559501B (en) * 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US8115883B2 (en) * 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027656A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
CN102498570B (en) * 2009-09-04 2016-02-10 株式会社半导体能源研究所 Light-emitting device and manufacture method thereof
KR20170046186A (en) * 2009-09-16 2017-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device
CN105448937A (en) * 2009-09-16 2016-03-30 株式会社半导体能源研究所 Transistor and display device
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
KR20190137959A (en) 2009-09-24 2019-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
CN102576677B (en) * 2009-09-24 2015-07-22 株式会社半导体能源研究所 Semiconductor element and method for manufacturing the same
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20190018030A (en) 2009-10-09 2019-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101801540B1 (en) * 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the liquid crystal display device
KR101801959B1 (en) * 2009-10-21 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the same
WO2011049230A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
CN102723364B (en) 2009-10-21 2015-02-25 株式会社半导体能源研究所 Semiconductor device
KR20120102653A (en) * 2009-10-30 2012-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101605984B1 (en) * 2009-11-06 2016-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101747158B1 (en) * 2009-11-06 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
EP3051588A1 (en) 2009-11-06 2016-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011055620A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5596963B2 (en) * 2009-11-19 2014-09-24 出光興産株式会社 Sputtering target and thin film transistor using the same
KR20120106766A (en) 2009-11-20 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011074391A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
WO2011077916A1 (en) * 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20170142998A (en) * 2009-12-25 2017-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101873730B1 (en) * 2010-01-24 2018-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011093151A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the same
CN102725842B (en) 2010-02-05 2014-12-03 株式会社半导体能源研究所 Semiconductor device
KR101600879B1 (en) * 2010-03-16 2016-03-09 삼성디스플레이 주식회사 Thin film transistor, manufacturing method thereof and display substrate using the thin film transistor
WO2011118351A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118364A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5708910B2 (en) 2010-03-30 2015-04-30 ソニー株式会社 Thin film transistor, manufacturing method thereof, and display device
DE112011101396T5 (en) * 2010-04-23 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method for the same
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101609033B1 (en) * 2010-08-07 2016-04-04 샤프 가부시키가이샤 Thin-film transistor substrate, and liquid crystal display device provided with same
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8816722B2 (en) * 2010-09-13 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Current detection circuit
US20120064665A1 (en) * 2010-09-13 2012-03-15 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus, apparatus for successive deposition, and method for manufacturing semiconductor device
TWI423346B (en) * 2010-10-26 2014-01-11 Au Optronics Corp Thin film transistor and method for fabricating the same
TWI555205B (en) * 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR101763052B1 (en) 2010-12-03 2017-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8912080B2 (en) * 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
TWI570809B (en) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI570920B (en) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TW201921684A (en) 2011-01-26 2019-06-01 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP5657434B2 (en) * 2011-03-14 2015-01-21 富士フイルム株式会社 Method for manufacturing oxide semiconductor thin film, field effect transistor, display device, and sensor
JP2012222007A (en) * 2011-04-05 2012-11-12 Dainippon Printing Co Ltd Coplanar type oxide semiconductor element and manufacturing method of the same
US9331206B2 (en) * 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
KR20130007426A (en) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US9166055B2 (en) * 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI565067B (en) * 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101875940B1 (en) * 2011-09-01 2018-07-06 엘지디스플레이 주식회사 Oxide thin film transistor and method for fabricating the same
JP5814712B2 (en) * 2011-09-15 2015-11-17 日本放送協会 Thin film device manufacturing method
SG11201505088UA (en) 2011-09-29 2015-08-28 Semiconductor Energy Lab Semiconductor device
US8728861B2 (en) 2011-10-12 2014-05-20 The United States Of America As Represented By The Secretary Of The Air Force Fabrication method for ZnO thin film transistors using etch-stop layer
CN107068765A (en) 2011-10-14 2017-08-18 株式会社半导体能源研究所 Semiconductor device
KR20130040706A (en) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing semiconductor device
JP6122275B2 (en) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 Display device
JP6076038B2 (en) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 Method for manufacturing display device
US9076871B2 (en) * 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI604609B (en) 2012-02-02 2017-11-01 半導體能源研究所股份有限公司 Semiconductor device
KR20130111873A (en) 2012-04-02 2013-10-11 단국대학교 산학협력단 Manufacturing method for a thin film transistor array panel
WO2013154195A1 (en) 2012-04-13 2013-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5759425B2 (en) * 2012-07-20 2015-08-05 株式会社神戸製鋼所 Quality evaluation method of target assembly used for forming thin film for semiconductor layer of thin film transistor
KR102006585B1 (en) 2012-11-08 2019-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Metal oxide film and method for forming metal oxide film
TWI496277B (en) * 2012-12-03 2015-08-11 Innocom Tech Shenzhen Co Ltd X-ray detector
CN103022149B (en) 2012-12-14 2015-06-10 京东方科技集团股份有限公司 Thin film transistor, array base plate, manufacturing method and display device
CN103441100B (en) * 2013-08-22 2015-05-20 合肥京东方光电科技有限公司 Display substrate and manufacturing method and display device of display substrate
KR20150073297A (en) * 2013-12-20 2015-07-01 삼성디스플레이 주식회사 Thin film transistor, display substrate having the same and method of manufacturing a display substrate
JP6227396B2 (en) * 2013-12-20 2017-11-08 株式会社ジャパンディスプレイ Thin film transistor and display device using the same
TWI660490B (en) 2014-03-13 2019-05-21 日商半導體能源研究所股份有限公司 Imaging device
KR20150122589A (en) 2014-04-23 2015-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Imaging device
DE112016000311B4 (en) 2015-01-08 2019-03-07 Mitsubishi Electric Corp. A thin film transistor substrate, a method of manufacturing a thin film transistor substrate, and a liquid crystal display
JP6240692B2 (en) * 2016-02-15 2017-11-29 株式会社ジャパンディスプレイ Display device and manufacturing method of display device
KR101872421B1 (en) * 2016-04-12 2018-06-28 충북대학교 산학협력단 Oxide semiconducting transistor, and method thereof

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255942B2 (en) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 A method for manufacturing a reverse staggered thin film transistor
JP4493741B2 (en) * 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2001217423A (en) * 2000-02-01 2001-08-10 Sony Corp Thin film semiconductor device, display and its manufacturing method
JP2001284592A (en) * 2000-03-29 2001-10-12 Sony Corp Thin-film semiconductor device and driving method therefor
US6620719B1 (en) * 2000-03-31 2003-09-16 International Business Machines Corporation Method of forming ohmic contacts using a self doping layer for thin-film transistors
WO2002016679A1 (en) * 2000-08-18 2002-02-28 Tohoku Techno Arch Co., Ltd. Polycrystalline semiconductor material and method of manufacture thereof
JP2003037268A (en) * 2001-07-24 2003-02-07 Minolta Co Ltd Semiconductor element and manufacturing method therefor
JP4090716B2 (en) * 2001-09-10 2008-05-28 シャープ株式会社 Thin film transistor and matrix display device
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
US7476936B2 (en) * 2002-04-16 2009-01-13 Sharp Kabushiki Kaisha Substrate, liquid crystal display having the substrate, and method for producing substrate
JP2004022625A (en) 2002-06-13 2004-01-22 Murata Mfg Co Ltd Manufacturing method of semiconductor device and its manufacturing method
GB0222450D0 (en) * 2002-09-27 2002-11-06 Koninkl Philips Electronics Nv Method of manufacturing an electronic device comprising a thin film transistor
TW588299B (en) * 2003-04-04 2004-05-21 Au Optronics Corp Active-matrix organic electroluminescence display device and fabricating method thereof
JP4108633B2 (en) * 2003-06-20 2008-06-25 シャープ株式会社 Thin film transistor, manufacturing method thereof, and electronic device
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7242039B2 (en) 2004-03-12 2007-07-10 Hewlett-Packard Development Company, L.P. Semiconductor device
TWI256515B (en) * 2004-04-06 2006-06-11 Quanta Display Inc Structure of LTPS-TFT and fabricating method thereof
WO2005107327A1 (en) 2004-04-30 2005-11-10 Sanyo Electric Co., Ltd. Light-emitting display
JP4541787B2 (en) 2004-07-06 2010-09-08 株式会社神戸製鋼所 Display device
JP2006100760A (en) * 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
KR100998527B1 (en) 2004-11-10 2010-12-07 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 Amorphous oxide and field effect transistor
KR100726090B1 (en) * 2004-12-30 2007-06-08 엘지.필립스 엘시디 주식회사 TFT array substrate and the fabrication method thereof
JP2006196712A (en) * 2005-01-13 2006-07-27 Toshiba Corp Manufacturing method of thin-film element
KR101100891B1 (en) * 2005-05-23 2012-01-02 삼성전자주식회사 Thin film transistor substrate and display apparatus havign the same
JP2006344849A (en) * 2005-06-10 2006-12-21 Casio Comput Co Ltd Thin film transistor
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7683370B2 (en) * 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
JP4870403B2 (en) 2005-09-02 2012-02-08 カシオ計算機株式会社 Thin film transistor manufacturing method
JP2007073558A (en) 2005-09-02 2007-03-22 Casio Comput Co Ltd Method of manufacturing thin-film transistor
JP4958253B2 (en) 2005-09-02 2012-06-20 カシオ計算機株式会社 Thin film transistor
JP4560502B2 (en) * 2005-09-06 2010-10-13 キヤノン株式会社 Field effect transistor
KR100786498B1 (en) 2005-09-27 2007-12-17 삼성에스디아이 주식회사 Transparent thin film transistor and manufacturing method thereof
EP1998374A3 (en) * 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
CN101577256B (en) * 2005-11-15 2011-07-27 株式会社半导体能源研究所 Semiconductor device and method of manufacturing the same
CN101336485B (en) * 2005-12-02 2012-09-26 出光兴产株式会社 TFT substrate and TFT substrate manufacturing method
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
TWI295855B (en) * 2006-03-03 2008-04-11 Ind Tech Res Inst Double gate thin-film transistor and method for forming the same
KR101206033B1 (en) * 2006-04-18 2012-11-28 삼성전자주식회사 Fabrication method of ZnO Thin Film and ZnO Transistor, and Thin Film Transistor adopting the same
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
KR101246024B1 (en) * 2006-07-21 2013-03-26 삼성디스플레이 주식회사 Method of manufacturing display substrate, display substrate and display device having the same
JP4785721B2 (en) * 2006-12-05 2011-10-05 キヤノン株式会社 Etching method, pattern forming method, thin film transistor manufacturing method, and etching solution
KR101146574B1 (en) * 2006-12-05 2012-05-16 캐논 가부시끼가이샤 Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
TWI478347B (en) * 2007-02-09 2015-03-21 Idemitsu Kosan Co A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device
JP2008258345A (en) * 2007-04-04 2008-10-23 Sony Corp Thin film transistor, its manufacturing method, and display unit
JP5264197B2 (en) * 2008-01-23 2013-08-14 キヤノン株式会社 Thin film transistor

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DE602008003796D1 (en) 2011-01-13
EP2153468A1 (en) 2010-02-17
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TW200915577A (en) 2009-04-01
US20100140612A1 (en) 2010-06-10
JP2009010362A (en) 2009-01-15
TWI373142B (en) 2012-09-21
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KR20100020485A (en) 2010-02-22
EP2153468B1 (en) 2010-12-01

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