AT487239T - Light-emitting device and method for the production thereof - Google Patents

Light-emitting device and method for the production thereof

Info

Publication number
AT487239T
AT487239T AT03012454T AT03012454T AT487239T AT 487239 T AT487239 T AT 487239T AT 03012454 T AT03012454 T AT 03012454T AT 03012454 T AT03012454 T AT 03012454T AT 487239 T AT487239 T AT 487239T
Authority
AT
Austria
Prior art keywords
production
light
emitting device
method
emitting
Prior art date
Application number
AT03012454T
Other languages
German (de)
Inventor
Noboru Ichinose
Kiyoshi Shimamura
Yukio Kaneko
Villora Encarnacion Antonia Garcia
Kazuo Aoki
Original Assignee
Koha Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2002160630 priority Critical
Priority to JP2003137912A priority patent/JP3679097B2/en
Application filed by Koha Co Ltd filed Critical Koha Co Ltd
Publication of AT487239T publication Critical patent/AT487239T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34Edge-defined film-fed crystal-growth using dies or slits
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02425Conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02458Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/0256Selenides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02579P-type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/002Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/06102Disposition the bonding areas being at different heights
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
AT03012454T 2002-05-31 2003-05-30 Light-emitting device and method for the production thereof AT487239T (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002160630 2002-05-31
JP2003137912A JP3679097B2 (en) 2002-05-31 2003-05-15 Light emitting element

Publications (1)

Publication Number Publication Date
AT487239T true AT487239T (en) 2010-11-15

Family

ID=29422476

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03012454T AT487239T (en) 2002-05-31 2003-05-30 Light-emitting device and method for the production thereof

Country Status (9)

Country Link
US (7) US6977397B2 (en)
EP (1) EP1367657B1 (en)
JP (1) JP3679097B2 (en)
KR (1) KR100993408B1 (en)
CN (2) CN101320780B (en)
AT (1) AT487239T (en)
DE (1) DE60334754D1 (en)
HK (1) HK1063377A1 (en)
TW (1) TWI292623B (en)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4150527B2 (en) * 2002-02-27 2008-09-17 日鉱金属株式会社 Crystal production method
JP3679097B2 (en) 2002-05-31 2005-08-03 株式会社光波 Light emitting element
US7393411B2 (en) * 2003-02-24 2008-07-01 Waseda University β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
JP4754164B2 (en) 2003-08-08 2011-08-24 株式会社光波 Semiconductor layer
KR20050051920A (en) * 2003-11-28 2005-06-02 삼성전자주식회사 Flip-chip type light emitting device and method of manufacturing the same
JP2005235961A (en) * 2004-02-18 2005-09-02 Univ Waseda Method for controlling conductivity of gallium oxide series monocrystal
US7250627B2 (en) 2004-03-12 2007-07-31 Hewlett-Packard Development Company, L.P. Semiconductor device
JP4670034B2 (en) 2004-03-12 2011-04-13 学校法人早稲田大学 Ga2O3-based semiconductor layer provided with electrodes
JP4476691B2 (en) * 2004-05-13 2010-06-09 学校法人立命館 Gallium oxide single crystal composite, method for producing the same, and method for producing nitride semiconductor film using gallium oxide single crystal composite
JP4831940B2 (en) * 2004-05-24 2011-12-07 株式会社光波 Manufacturing method of semiconductor device
JP4064436B2 (en) * 2004-06-11 2008-03-19 松下電器産業株式会社 Power element
JP2006032737A (en) * 2004-07-16 2006-02-02 Koha Co Ltd Light emitting element
JP2006032739A (en) * 2004-07-16 2006-02-02 Koha Co Ltd Light emitting element
JP2006032738A (en) * 2004-07-16 2006-02-02 Koha Co Ltd Light emitting element
JP4647286B2 (en) * 2004-11-09 2011-03-09 株式会社光波 Semiconductor device and manufacturing method thereof
JP4647287B2 (en) * 2004-11-09 2011-03-09 株式会社光波 Semiconductor device
JP5159040B2 (en) * 2005-03-31 2013-03-06 株式会社光波 Method for forming low temperature growth buffer layer and method for manufacturing light emitting device
KR100691159B1 (en) * 2005-04-30 2007-03-09 삼성전기주식회사 Method For Manufacturing Gallium Nitride-Based Semiconductor Device
JP4611103B2 (en) * 2005-05-09 2011-01-12 株式会社光波 Method for producing β-Ga2O3 crystal
JP5180430B2 (en) * 2005-08-04 2013-04-10 独立行政法人物質・材料研究機構 Light emitting element
KR100691251B1 (en) * 2005-08-08 2007-03-12 성균관대학교산학협력단 emitting apparatus and thereof fabricating method
CN100418240C (en) * 2005-10-18 2008-09-10 南京大学 Method for growing InGaN/GaN quantum hydrolazium LED device structure on beta digallium trioxide substrate
US20070134833A1 (en) * 2005-12-14 2007-06-14 Toyoda Gosei Co., Ltd. Semiconductor element and method of making same
JP2007165626A (en) * 2005-12-14 2007-06-28 Koha Co Ltd Light emitting element and its manufacturing method
JP4680762B2 (en) * 2005-12-14 2011-05-11 株式会社光波 Light emitting device and manufacturing method thereof
JP2007254174A (en) * 2006-03-20 2007-10-04 Nippon Light Metal Co Ltd Gallium oxide single crystal and its manufacturing method, and nitride semiconductor substrate and its manufacturing method
JP2008016694A (en) * 2006-07-07 2008-01-24 Koha Co Ltd Method of manufacturing semiconductor device
JP2008066591A (en) * 2006-09-08 2008-03-21 Matsushita Electric Works Ltd Compound semiconductor light emitting device, illumination apparatus employing the same and manufacturing method of compound semiconductor device
JP2008098249A (en) * 2006-10-06 2008-04-24 Koha Co Ltd Light-emitting element
WO2008050479A1 (en) * 2006-10-25 2008-05-02 Stanley Electric Co., Ltd. ZnO LAYER AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
JP2008117966A (en) * 2006-11-06 2008-05-22 Koha Co Ltd Semiconductor laser and manufacturing method therefor
JP2008156141A (en) * 2006-12-21 2008-07-10 Koha Co Ltd Semiconductor substrate and method for manufacturing the same
KR101020958B1 (en) * 2008-11-17 2011-03-09 엘지이노텍 주식회사 Method for manufacturing a gallium oxide substrate, light emitting device and method for fabricating the same
JP5078039B2 (en) * 2009-01-19 2012-11-21 学校法人早稲田大学 Ga2O3 semiconductor device and method for manufacturing Ga2O3 semiconductor device
JP5378829B2 (en) * 2009-02-19 2013-12-25 住友電気工業株式会社 Method for forming epitaxial wafer and method for manufacturing semiconductor device
KR101047652B1 (en) * 2009-12-18 2011-07-07 엘지이노텍 주식회사 Light emitting device and manufacturing method
JP2011146652A (en) * 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd Laminated substrate, method of manufacturing laminated substrate, and light-emitting element
JP5493092B2 (en) * 2010-01-28 2014-05-14 並木精密宝石株式会社 Method for producing gallium oxide single crystal and gallium oxide single crystal
JP5618318B2 (en) * 2010-03-12 2014-11-05 並木精密宝石株式会社 Method and apparatus for producing gallium oxide single crystal
JP5382589B2 (en) * 2010-11-15 2014-01-08 学校法人早稲田大学 Method for controlling conductivity of Ga2O3-based single crystal
WO2012137781A1 (en) * 2011-04-08 2012-10-11 株式会社タムラ製作所 Semiconductor stacked body, method for manufacturing same, and semiconductor element
JP5692596B2 (en) * 2011-06-23 2015-04-01 学校法人早稲田大学 Method for controlling conductivity of β-Ga 2 O 3 single crystal
CN106098756B (en) * 2011-09-08 2019-12-17 株式会社田村制作所 Ga2O3Method for controlling donor concentration of monocrystal
EP2754736A4 (en) 2011-09-08 2015-06-24 Tamura Seisakusho Kk Crystal laminate structure and method for producing same
CN103782392A (en) * 2011-09-08 2014-05-07 株式会社田村制作所 Ga2O3 semiconductor element
JP5543672B2 (en) * 2011-09-08 2014-07-09 株式会社タムラ製作所 Crystal structure
JP5857337B2 (en) * 2011-09-21 2016-02-10 並木精密宝石株式会社 Gallium oxide substrate and manufacturing method thereof
JP5864998B2 (en) * 2011-10-11 2016-02-17 株式会社タムラ製作所 Method for growing β-Ga 2 O 3 single crystal
JP2013086976A (en) * 2011-10-13 2013-05-13 Tamura Seisakusho Co Ltd Method for producing crystal laminated structure
JP2013089616A (en) * 2011-10-13 2013-05-13 Tamura Seisakusho Co Ltd Crystalline laminate structure and manufacturing method thereof
WO2013054916A1 (en) * 2011-10-13 2013-04-18 株式会社タムラ製作所 Crystal layered structure and method for manufacturing same, and semiconductor element
JP5879102B2 (en) * 2011-11-15 2016-03-08 株式会社タムラ製作所 Method for producing β-Ga2O3 single crystal
JP5491483B2 (en) * 2011-11-15 2014-05-14 株式会社タムラ製作所 Method for growing β-Ga 2 O 3 single crystal
JP5891028B2 (en) * 2011-12-16 2016-03-22 株式会社タムラ製作所 Method for producing Ga2O3-based substrate
CN102534758A (en) * 2012-01-20 2012-07-04 上海中电振华晶体技术有限公司 Growth method and growth device for bar-shaped sapphire crystals
JP6097989B2 (en) * 2012-04-24 2017-03-22 並木精密宝石株式会社 Gallium oxide single crystal and gallium oxide single crystal substrate
JP2013237591A (en) * 2012-05-16 2013-11-28 Namiki Precision Jewel Co Ltd Gallium oxide melt, gallium oxide single crystal, gallium oxide substrate, and method for producing gallium oxide single crystal
EP2851458A4 (en) * 2012-05-16 2015-12-09 Namiki Precision Jewel Co Ltd Monocrystalline gallium oxide and monocrystalline gallium oxide substrate
JP6085764B2 (en) * 2012-05-23 2017-03-01 並木精密宝石株式会社 Gallium oxide single crystal and gallium oxide single crystal substrate
JP5799354B2 (en) * 2012-08-23 2015-10-21 学校法人早稲田大学 Ga2O3 semiconductor device
JP5756075B2 (en) * 2012-11-07 2015-07-29 株式会社タムラ製作所 Method for growing β-Ga 2 O 3 single crystal
JP6142357B2 (en) * 2013-03-01 2017-06-07 株式会社タムラ製作所 Method for controlling donor concentration of Ga2O3-based single crystal and method for forming ohmic contact
JP5788925B2 (en) * 2013-04-04 2015-10-07 株式会社タムラ製作所 Method for growing β-Ga 2 O 3 single crystal
JP5865867B2 (en) * 2013-05-13 2016-02-17 株式会社タムラ製作所 Method for growing β-Ga 2 O 3 single crystal and method for producing β-Ga 2 O 3 single crystal substrate
JP5836999B2 (en) 2013-05-14 2015-12-24 株式会社タムラ製作所 Method for growing β-Ga 2 O 3 single crystal and method for producing β-Ga 2 O 3 single crystal substrate
JP2015163567A (en) * 2014-02-28 2015-09-10 株式会社タムラ製作所 Semiconductor multilayer structure, and semiconductor element
WO2015135817A1 (en) * 2014-03-13 2015-09-17 Koninklijke Philips N.V. Filament for lighting device
US20170137965A1 (en) * 2014-07-02 2017-05-18 Tamura Corporation Gallium oxide substrate
JP2015008317A (en) * 2014-08-20 2015-01-15 学校法人早稲田大学 Ga2O3 SEMICONDUCTOR SUBSTRATE STRUCTURE
JP6403057B2 (en) * 2014-10-21 2018-10-10 国立大学法人信州大学 Method and apparatus for producing β-Ga2O3 crystal
JP6402079B2 (en) * 2015-09-02 2018-10-10 株式会社タムラ製作所 Method for producing β-Ga2O3 single crystal substrate
CN106978626A (en) * 2016-01-15 2017-07-25 中国科学院上海硅酸盐研究所 Mix germanium gallium oxide electrically conducting transparent semiconductor monocrystal and preparation method thereof
JP2017193466A (en) 2016-04-21 2017-10-26 国立大学法人信州大学 Manufacturing apparatus for gallium oxide crystal and manufacturing method for gallium oxide crystal
CN109097833A (en) * 2018-11-12 2018-12-28 孟静 The preparation facilities of large size silicon-carbide monocrystalline plate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0782088A (en) * 1993-09-17 1995-03-28 Shinkosha:Kk Method for growing single crystal
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
JP3890930B2 (en) 1995-03-29 2007-03-07 日亜化学工業株式会社 Nitride semiconductor light emitting device
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
US6218207B1 (en) * 1998-05-29 2001-04-17 Mitsushita Electronics Corporation Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same
WO1999066565A1 (en) * 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
US6291085B1 (en) * 1998-08-03 2001-09-18 The Curators Of The University Of Missouri Zinc oxide films containing P-type dopant and process for preparing same
JP4174913B2 (en) * 1999-06-04 2008-11-05 昭和電工株式会社 Group III nitride semiconductor light emitting device
CN1123937C (en) * 1999-07-28 2003-10-08 光磊科技股份有限公司 Blue-light LED using sapphire as substrate and its making technology
JP4547746B2 (en) 1999-12-01 2010-09-22 ソニー株式会社 Method for producing crystal of nitride III-V compound
JP2001338886A (en) * 2000-03-24 2001-12-07 Ngk Insulators Ltd Semiconductor device, its manufacturing method and substrate for semiconductor device used for the same
CN1095505C (en) * 2000-03-30 2002-12-04 天津市环欧半导体材料技术有限公司 Vertical pulling and zone melting process of producing monocrystalline silicon
JP4083396B2 (en) * 2000-07-10 2008-04-30 裕道 太田 Ultraviolet transparent conductive film and manufacturing method thereof
TW541723B (en) 2001-04-27 2003-07-11 Shinetsu Handotai Kk Method for manufacturing light-emitting element
JP4232363B2 (en) 2001-08-30 2009-03-04 信越半導体株式会社 ZnO-based semiconductor light emitting device
JP4465941B2 (en) * 2001-11-22 2010-05-26 富士ゼロックス株式会社 UV detector
JP3679097B2 (en) 2002-05-31 2005-08-03 株式会社光波 Light emitting element
JP4630986B2 (en) 2003-02-24 2011-02-09 学校法人早稲田大学 β-Ga2O3-based single crystal growth method
US7393411B2 (en) 2003-02-24 2008-07-01 Waseda University β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
JP4565062B2 (en) 2003-03-12 2010-10-20 学校法人早稲田大学 Thin film single crystal growth method
DE60325458D1 (en) 2003-04-18 2009-02-05 St Microelectronics Srl Electronic component with transition and integrated with the component power device

Also Published As

Publication number Publication date
CN100405618C (en) 2008-07-23
JP2004056098A (en) 2004-02-19
US7319249B2 (en) 2008-01-15
HK1063377A1 (en) 2008-12-24
US20080237607A1 (en) 2008-10-02
US20140306237A1 (en) 2014-10-16
US9117974B2 (en) 2015-08-25
US20060001031A1 (en) 2006-01-05
US20040007708A1 (en) 2004-01-15
TWI292623B (en) 2008-01-11
CN101320780A (en) 2008-12-10
US7608472B2 (en) 2009-10-27
KR20030094031A (en) 2003-12-11
US8791466B2 (en) 2014-07-29
CN1474466A (en) 2004-02-11
DE60334754D1 (en) 2010-12-16
JP3679097B2 (en) 2005-08-03
US20130248902A1 (en) 2013-09-26
EP1367657A3 (en) 2008-04-30
US7629615B2 (en) 2009-12-08
EP1367657A2 (en) 2003-12-03
US6977397B2 (en) 2005-12-20
US8450747B2 (en) 2013-05-28
US20100038652A1 (en) 2010-02-18
KR100993408B1 (en) 2010-11-09
US20080070337A1 (en) 2008-03-20
TW200406915A (en) 2004-05-01
CN101320780B (en) 2010-06-16
EP1367657B1 (en) 2010-11-03

Similar Documents

Publication Publication Date Title
DE60323873D1 (en) Traditional manufacturing method
DE60330066D1 (en) Drill and method for its manufacture
DE60324376D1 (en) Semiconductor component and method for its production
DE60318230D1 (en) Method for multiphotone photosensibilization
DE60313602D1 (en) N-iPHENYL (PIPERIDIN-2-YL) METHYLENEZOMID DERIVATIVES, METHOD FOR THE PRODUCTION THEREOF AND THEIR THERAPEUTIC APPLICATION
GB2396734B (en) Organic electroluminescent device and manufacturing method for the same
DE60318693D1 (en) Transcutane portal device
DE60321367D1 (en) Electronic transmission / inductivity device and method for the production thereof
DE60307623D1 (en) Pflanzenzucht device
DE60312457D1 (en) Composite film and method and device for its production
DE60318876D1 (en) Electroluminating device
DE60219690D1 (en) Electroluminescent device
DE60318583D1 (en) N-äphenyl (piperidin-2-yl) methylubenzamide derivatives, method for the production thereof and their therapeutic use
DE60305105D1 (en) Aluminum-coated component and method for its production
FR2831764B1 (en) Organic electroluminescent device and method for manufacturing the same
DE60232278D1 (en) Method and devices for regulating the reason
DE60336059D1 (en) Method for use thereof
DE60118795D1 (en) Adhesive and method for the production thereof
DE60335743D1 (en) Compounds and method for increasing the neurogenesis
DE50304579D1 (en) Bipolar plate and method for the production thereof
DE60329103D1 (en) Lifting and method for the application
DE50303413D1 (en) Fastening means and method for its production
DE50302478D1 (en) Electrode and a method for the production thereof
FR2844277B1 (en) L-aminoacid-producing bacterium and process for producing the l-aminoacide
DE602004025922D1 (en) Illustration device and illustrative process

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties