AT483249T - Nitride semiconductor component and method for the production thereof - Google Patents

Nitride semiconductor component and method for the production thereof

Info

Publication number
AT483249T
AT483249T AT07726466T AT07726466T AT483249T AT 483249 T AT483249 T AT 483249T AT 07726466 T AT07726466 T AT 07726466T AT 07726466 T AT07726466 T AT 07726466T AT 483249 T AT483249 T AT 483249T
Authority
AT
Austria
Prior art keywords
production
method
nitride semiconductor
semiconductor component
component
Prior art date
Application number
AT07726466T
Other languages
German (de)
Inventor
Armin Dadgar
Alois Krost
Original Assignee
Azzurro Semiconductors Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US77645706P priority Critical
Priority to DE200610008929 priority patent/DE102006008929A1/en
Application filed by Azzurro Semiconductors Ag filed Critical Azzurro Semiconductors Ag
Priority to PCT/EP2007/051708 priority patent/WO2007096405A1/en
Publication of AT483249T publication Critical patent/AT483249T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02458Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02496Layer structure
    • H01L21/02505Layer structure consisting of more than two layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647Lateral overgrowth
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0079Processes for devices with an active region comprising only III-V compounds wafer bonding or at least partial removal of the growth substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
AT07726466T 2006-02-23 2007-02-22 Nitride semiconductor component and method for the production thereof AT483249T (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US77645706P true 2006-02-23 2006-02-23
DE200610008929 DE102006008929A1 (en) 2006-02-23 2006-02-23 Layer structure production for nitride semiconductor component on silicon surface, involves preparation of substrate having silicon surface on which nitride nucleation layer is deposited with masking layer
PCT/EP2007/051708 WO2007096405A1 (en) 2006-02-23 2007-02-22 Nitride semiconductor component and method for the production thereof

Publications (1)

Publication Number Publication Date
AT483249T true AT483249T (en) 2010-10-15

Family

ID=38020245

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07726466T AT483249T (en) 2006-02-23 2007-02-22 Nitride semiconductor component and method for the production thereof

Country Status (10)

Country Link
EP (2) EP2112699A3 (en)
JP (4) JP5393158B2 (en)
KR (4) KR101693849B1 (en)
CN (1) CN102064091B (en)
AT (1) AT483249T (en)
DE (1) DE502007005172D1 (en)
HK (1) HK1116922A1 (en)
MY (1) MY149325A (en)
SG (2) SG170031A1 (en)
WO (1) WO2007096405A1 (en)

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US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
KR101081169B1 (en) * 2010-04-05 2011-11-07 엘지이노텍 주식회사 Light emitting device and method for fabricating the same, light emitting device package, lighting system
US8692261B2 (en) 2010-05-19 2014-04-08 Koninklijke Philips N.V. Light emitting device grown on a relaxed layer
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
WO2011162715A1 (en) * 2010-06-24 2011-12-29 Glo Ab Substrate with buffer layer for oriented nanowire growth
WO2012035135A1 (en) * 2010-09-19 2012-03-22 Osram Opto Semiconductors Gmbh Semiconductor chip and method for producing the same
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US20120292648A1 (en) * 2011-05-16 2012-11-22 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
US9012921B2 (en) * 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8664679B2 (en) * 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
DE102011114671A1 (en) 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
DE102011114670A1 (en) * 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
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US9136430B2 (en) 2012-08-09 2015-09-15 Samsung Electronics Co., Ltd. Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
US8946773B2 (en) 2012-08-09 2015-02-03 Samsung Electronics Co., Ltd. Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure
JP5421442B1 (en) 2012-09-26 2014-02-19 株式会社東芝 Nitride semiconductor wafer, nitride semiconductor device, and method of manufacturing nitride semiconductor wafer
DE102012217631A1 (en) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Optoelectronic component with a layer structure
JP5944301B2 (en) * 2012-11-19 2016-07-05 株式会社東芝 Manufacturing method of semiconductor light emitting device
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JP5460831B1 (en) 2012-11-22 2014-04-02 株式会社東芝 Semiconductor light emitting device
JP6270536B2 (en) 2013-06-27 2018-01-31 株式会社東芝 Nitride semiconductor device, nitride semiconductor wafer, and method of forming nitride semiconductor layer
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Also Published As

Publication number Publication date
DE502007005172D1 (en) 2010-11-11
JP2013219391A (en) 2013-10-24
CN102064091B (en) 2013-03-20
EP2112699A3 (en) 2009-12-30
CN102064091A (en) 2011-05-18
HK1116922A1 (en) 2010-12-17
WO2007096405A1 (en) 2007-08-30
EP1875523B1 (en) 2010-09-29
EP2112699A2 (en) 2009-10-28
EP1875523A1 (en) 2008-01-09
KR20080104014A (en) 2008-11-28
SG10201405004WA (en) 2014-10-30
KR20100017895A (en) 2010-02-16
JP5393158B2 (en) 2014-01-22
MY149325A (en) 2013-08-30
JP2011233936A (en) 2011-11-17
JP2015216378A (en) 2015-12-03
JP2009527913A (en) 2009-07-30
KR20150123294A (en) 2015-11-03
SG170031A1 (en) 2011-04-29
KR20150123293A (en) 2015-11-03
KR101693849B1 (en) 2017-01-06

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