AT475197T - Semiconductor device and method for producing such a component - Google Patents

Semiconductor device and method for producing such a component

Info

Publication number
AT475197T
AT475197T AT05718771T AT05718771T AT475197T AT 475197 T AT475197 T AT 475197T AT 05718771 T AT05718771 T AT 05718771T AT 05718771 T AT05718771 T AT 05718771T AT 475197 T AT475197 T AT 475197T
Authority
AT
Austria
Prior art keywords
producing
component
method
semiconductor device
semiconductor
Prior art date
Application number
AT05718771T
Other languages
German (de)
Inventor
Noort Wibo Van
Petrus Magnee
Lis Nanver
Celine Detcheverry
Ramon Havens
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to EP04101769 priority Critical
Priority to EP04102908 priority
Priority to EP04103676 priority
Application filed by Nxp Bv filed Critical Nxp Bv
Priority to PCT/IB2005/051293 priority patent/WO2005104232A1/en
Publication of AT475197T publication Critical patent/AT475197T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
AT05718771T 2004-04-27 2005-04-20 Semiconductor device and method for producing such a component AT475197T (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP04101769 2004-04-27
EP04102908 2004-06-23
EP04103676 2004-07-30
PCT/IB2005/051293 WO2005104232A1 (en) 2004-04-27 2005-04-20 Semiconductor device and method of manufacturing such a device

Publications (1)

Publication Number Publication Date
AT475197T true AT475197T (en) 2010-08-15

Family

ID=34965515

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05718771T AT475197T (en) 2004-04-27 2005-04-20 Semiconductor device and method for producing such a component

Country Status (9)

Country Link
US (1) US8084829B2 (en)
EP (1) EP1743372B1 (en)
JP (1) JP2007535162A (en)
KR (1) KR101205115B1 (en)
CN (1) CN1947250B (en)
AT (1) AT475197T (en)
DE (1) DE602005022428D1 (en)
TW (1) TW200539442A (en)
WO (1) WO2005104232A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768092B2 (en) * 2005-07-20 2010-08-03 Cree Sweden Ab Semiconductor device comprising a junction having a plurality of rings
WO2007125977A1 (en) * 2006-04-27 2007-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance using the same
US7868419B1 (en) * 2007-10-18 2011-01-11 Rf Micro Devices, Inc. Linearity improvements of semiconductor substrate based radio frequency devices
JP2011119512A (en) * 2009-12-04 2011-06-16 Denso Corp Semiconductor device and method of manufacturing the same
US8492868B2 (en) * 2010-08-02 2013-07-23 International Business Machines Corporation Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
KR101905823B1 (en) 2011-07-27 2018-10-08 엘지이노텍 주식회사 Apparatus and method for fabrication wafer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3582890B2 (en) 1995-05-23 2004-10-27 株式会社日立製作所 Semiconductor device
US6680489B1 (en) * 1995-12-20 2004-01-20 Advanced Technology Materials, Inc. Amorphous silicon carbide thin film coating
KR100297703B1 (en) * 1998-02-24 2001-05-24 김덕중 Power semiconductor device adopting a SIPOS and method for forming thereof
US6356183B1 (en) * 1999-08-17 2002-03-12 United Microelectronics Corp. Method of manufacturing an inductor
US6503838B1 (en) * 1999-12-31 2003-01-07 Texas Instruments Incorporated Integrated circuit isolation of functionally distinct RF circuits
US6674131B2 (en) * 2000-06-27 2004-01-06 Matsushita Electric Industrial Co., Ltd. Semiconductor power device for high-temperature applications
SE520093C2 (en) 2000-12-13 2003-05-27 Ericsson Telefon Ab L M shielded inductor
US6737727B2 (en) * 2001-01-12 2004-05-18 International Business Machines Corporation Electronic structures with reduced capacitance
US6593185B1 (en) * 2002-05-17 2003-07-15 United Microelectronics Corp. Method of forming embedded capacitor structure applied to logic integrated circuit
JP4463482B2 (en) * 2002-07-11 2010-05-19 パナソニック株式会社 Misfet and a method of manufacturing the same
US7316014B2 (en) 2002-07-12 2008-01-01 Bsquare Corporation Application modification system and method

Also Published As

Publication number Publication date
US8084829B2 (en) 2011-12-27
EP1743372B1 (en) 2010-07-21
EP1743372A1 (en) 2007-01-17
TW200539442A (en) 2005-12-01
WO2005104232A1 (en) 2005-11-03
KR101205115B1 (en) 2012-11-26
JP2007535162A (en) 2007-11-29
CN1947250B (en) 2012-09-26
US20080173974A1 (en) 2008-07-24
DE602005022428D1 (en) 2010-09-02
CN1947250A (en) 2007-04-11
KR20070004089A (en) 2007-01-05

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties