AT459106T - Light-emitting components with current blocking structures and method for producing light-emitting components with current blocking structures - Google Patents

Light-emitting components with current blocking structures and method for producing light-emitting components with current blocking structures

Info

Publication number
AT459106T
AT459106T AT05763653T AT05763653T AT459106T AT 459106 T AT459106 T AT 459106T AT 05763653 T AT05763653 T AT 05763653T AT 05763653 T AT05763653 T AT 05763653T AT 459106 T AT459106 T AT 459106T
Authority
AT
Austria
Prior art keywords
current blocking
emitting components
blocking structures
light
method
Prior art date
Application number
AT05763653T
Other languages
German (de)
Inventor
Kevin Haberern
Michael Bergmann
Van Mieczkowski
David Emerson
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/881,814 priority Critical patent/US20060002442A1/en
Application filed by Cree Inc filed Critical Cree Inc
Priority to PCT/US2005/010868 priority patent/WO2006011936A2/en
Publication of AT459106T publication Critical patent/AT459106T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0421Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054Methods of obtaining the confinement
    • H01S5/2059Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054Methods of obtaining the confinement
    • H01S5/2059Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
AT05763653T 2004-06-30 2005-03-30 Light-emitting components with current blocking structures and method for producing light-emitting components with current blocking structures AT459106T (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/881,814 US20060002442A1 (en) 2004-06-30 2004-06-30 Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
PCT/US2005/010868 WO2006011936A2 (en) 2004-06-30 2005-03-30 Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures

Publications (1)

Publication Number Publication Date
AT459106T true AT459106T (en) 2010-03-15

Family

ID=35513875

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05763653T AT459106T (en) 2004-06-30 2005-03-30 Light-emitting components with current blocking structures and method for producing light-emitting components with current blocking structures

Country Status (11)

Country Link
US (2) US20060002442A1 (en)
EP (1) EP1766697B1 (en)
JP (3) JP4904261B2 (en)
KR (2) KR101418190B1 (en)
CN (2) CN101714606A (en)
AT (1) AT459106T (en)
CA (1) CA2567794A1 (en)
DE (1) DE602005019569D1 (en)
MY (1) MY143633A (en)
TW (2) TWI451589B (en)
WO (1) WO2006011936A2 (en)

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Also Published As

Publication number Publication date
WO2006011936A2 (en) 2006-02-02
JP2012054570A (en) 2012-03-15
US20070145392A1 (en) 2007-06-28
EP1766697A2 (en) 2007-03-28
JP4904261B2 (en) 2012-03-28
US20060002442A1 (en) 2006-01-05
WO2006011936A3 (en) 2006-12-07
JP5009841B2 (en) 2012-08-22
KR20120079172A (en) 2012-07-11
TW200605402A (en) 2006-02-01
CN1977398A (en) 2007-06-06
CN101714606A (en) 2010-05-26
DE602005019569D1 (en) 2010-04-08
TWI451589B (en) 2014-09-01
MY143633A (en) 2011-06-15
JP2008505483A (en) 2008-02-21
CA2567794A1 (en) 2006-02-02
KR20130050372A (en) 2013-05-15
KR101418224B1 (en) 2014-07-10
TWI506811B (en) 2015-11-01
TW201403856A (en) 2014-01-16
JP2008153705A (en) 2008-07-03
KR101418190B1 (en) 2014-07-10
EP1766697B1 (en) 2010-02-24

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