AT44335T - Electronic matrix and methods for their production with the simultaneous or subsequent programming. - Google Patents

Electronic matrix and methods for their production with the simultaneous or subsequent programming.

Info

Publication number
AT44335T
AT44335T AT84300213T AT84300213T AT44335T AT 44335 T AT44335 T AT 44335T AT 84300213 T AT84300213 T AT 84300213T AT 84300213 T AT84300213 T AT 84300213T AT 44335 T AT44335 T AT 44335T
Authority
AT
Austria
Prior art keywords
simultaneous
production
methods
subsequent programming
electronic matrix
Prior art date
Application number
AT84300213T
Other languages
German (de)
Inventor
Robert Royce Johnson
Stanford R Ovshinsky
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US45891983A priority Critical
Priority to US06/513,997 priority patent/US4545111A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Priority to EP19840300213 priority patent/EP0117046B1/en
Publication of AT44335T publication Critical patent/AT44335T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/24Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, e.g. resistance switching non-volatile memory structures
    • H01L27/2409Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, e.g. resistance switching non-volatile memory structures comprising two-terminal selection components, e.g. diodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/24Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, e.g. resistance switching non-volatile memory structures
    • H01L27/2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/24Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, e.g. resistance switching non-volatile memory structures
    • H01L27/2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout
    • H01L27/2472Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout the switching components having a common active material layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/06Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/12Details
    • H01L45/1213Radiation or particle beam assisted switching devices, e.g. optically controlled devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/12Details
    • H01L45/122Device geometry
    • H01L45/1233Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/14Selection of switching materials
    • H01L45/141Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H01L45/144Tellurides, e.g. GeSbTe
AT84300213T 1983-01-18 1984-01-13 Electronic matrix and methods for their production with the simultaneous or subsequent programming. AT44335T (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US45891983A true 1983-01-18 1983-01-18
US06/513,997 US4545111A (en) 1983-01-18 1983-07-14 Method for making, parallel preprogramming or field programming of electronic matrix arrays
EP19840300213 EP0117046B1 (en) 1983-01-18 1984-01-13 Electronic matrix arrays and method for making, parallel preprogramming or field programming the same

Publications (1)

Publication Number Publication Date
AT44335T true AT44335T (en) 1989-07-15

Family

ID=27039156

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84300213T AT44335T (en) 1983-01-18 1984-01-13 Electronic matrix and methods for their production with the simultaneous or subsequent programming.

Country Status (10)

Country Link
US (2) US4545111A (en)
EP (1) EP0117046B1 (en)
KR (1) KR930000719B1 (en)
AT (1) AT44335T (en)
AU (1) AU561855B2 (en)
BR (1) BR8400201A (en)
CA (1) CA1212470A (en)
DE (1) DE3478836D1 (en)
IL (1) IL70716A (en)
IN (1) IN160151B (en)

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Also Published As

Publication number Publication date
BR8400201A (en) 1984-08-21
AU2240783A (en) 1984-07-19
EP0117046A2 (en) 1984-08-29
KR840007314A (en) 1984-12-06
AU561855B2 (en) 1987-05-21
DE3478836D1 (en) 1989-08-03
CA1212470A1 (en)
US4545111A (en) 1985-10-08
IL70716D0 (en) 1984-04-30
IN160151B (en) 1987-06-27
KR930000719B1 (en) 1993-01-30
EP0117046A3 (en) 1987-01-14
US4597162A (en) 1986-07-01
CA1212470A (en) 1986-10-07
EP0117046B1 (en) 1989-06-28
IL70716A (en) 1987-03-31

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