AT358885T - Beamlet exposure system with loaded particles - Google Patents

Beamlet exposure system with loaded particles

Info

Publication number
AT358885T
AT358885T AT04748613T AT04748613T AT358885T AT 358885 T AT358885 T AT 358885T AT 04748613 T AT04748613 T AT 04748613T AT 04748613 T AT04748613 T AT 04748613T AT 358885 T AT358885 T AT 358885T
Authority
AT
Austria
Prior art keywords
loaded particles
beamlet exposure
beamlet
exposure
loaded
Prior art date
Application number
AT04748613T
Other languages
German (de)
Inventor
Pieter Kruit
Marco Jan-Jaco Wieland
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US47381003P priority Critical
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of AT358885T publication Critical patent/AT358885T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/045Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/043Beam blanking
    • H01J2237/0435Multi-aperture
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/045Diaphragms
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/045Diaphragms
    • H01J2237/0451Diaphragms with fixed aperture
    • H01J2237/0453Diaphragms with fixed aperture multiple apertures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/049Focusing means
    • H01J2237/0492Lens systems
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/1501Beam alignment means or procedures
AT04748613T 2003-05-28 2004-05-27 Beamlet exposure system with loaded particles AT358885T (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US47381003P true 2003-05-28 2003-05-28

Publications (1)

Publication Number Publication Date
AT358885T true AT358885T (en) 2007-04-15

Family

ID=33490650

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07075242T AT524822T (en) 2003-05-28 2004-05-27 Exposure method for rays from loaded particles
AT04748613T AT358885T (en) 2003-05-28 2004-05-27 Beamlet exposure system with loaded particles

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT07075242T AT524822T (en) 2003-05-28 2004-05-27 Exposure method for rays from loaded particles

Country Status (8)

Country Link
US (1) US7084414B2 (en)
EP (2) EP1830384B1 (en)
JP (1) JP4949843B2 (en)
KR (2) KR101175523B1 (en)
CN (1) CN100543920C (en)
AT (2) AT524822T (en)
DE (1) DE602004005704T2 (en)
WO (1) WO2004107050A2 (en)

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US7928404B2 (en) * 2003-10-07 2011-04-19 Multibeam Corporation Variable-ratio double-deflection beam blanker
EP1766653B1 (en) * 2004-05-17 2009-08-26 Mapper Lithography Ip B.V. Charged particle beam exposure system
US7425713B2 (en) * 2005-01-14 2008-09-16 Arradiance, Inc. Synchronous raster scanning lithographic system
NL1029132C2 (en) * 2005-05-26 2006-11-28 Univ Delft Tech Device for generating parallel ray-beam parts.
US8597089B2 (en) * 2005-07-08 2013-12-03 Praxair Technology, Inc. System and method for treating live cargo such as poultry with gas
EP2270834B9 (en) * 2005-09-06 2013-07-10 Carl Zeiss SMT GmbH Particle-optical component
EP2005460A4 (en) * 2006-03-27 2010-11-24 Multibeam Systems Inc Optics for generation of high current density patterned charged particle beams
DE602007003089D1 (en) * 2006-04-03 2009-12-17 Ims Nanofabrication Ag Particle beam exposure device with total moq
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US7569834B1 (en) 2006-10-18 2009-08-04 Kla-Tencor Technologies Corporation High resolution charged particle projection lens array using magnetic elements
EP2019415B1 (en) 2007-07-24 2016-05-11 IMS Nanofabrication AG Multi-beam source
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
EP2279515B1 (en) * 2008-04-15 2011-11-30 Mapper Lithography IP B.V. Projection lens arrangement
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US7851774B2 (en) * 2008-04-25 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for direct writing to a wafer
JP5587299B2 (en) * 2008-05-23 2014-09-10 マッパー・リソグラフィー・アイピー・ビー.ブイ. Imaging system
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TW201100973A (en) 2009-02-22 2011-01-01 Mapper Lithography Ip Bv A method and arrangement for realizing a vacuum in a vacuum chamber
WO2010094719A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
CN102414777B (en) 2009-02-22 2014-12-03 迈普尔平版印刷Ip有限公司 Charged particle lithography apparatus and method of generating vacuum in vacuum chamber
WO2010094804A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Lithography machine and substrate handling arrangement
WO2010134017A1 (en) * 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Method of generating a two-level pattern for lithographic processing and pattern generator using the same
JP2012527766A (en) 2009-05-20 2012-11-08 マッパー・リソグラフィー・アイピー・ビー.ブイ. Dual pass scanning
CN102460633B (en) 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 Pattern data conversion for lithography system
EP2494578B1 (en) 2009-10-26 2016-06-15 Mapper Lithography IP B.V. Charged particle multi-beamlet lithography system, with modulation device
US8952342B2 (en) * 2009-12-17 2015-02-10 Mapper Lithography Ip B.V. Support and positioning structure, semiconductor equipment system and method for positioning
EP2633545B1 (en) * 2010-10-26 2018-01-24 Mapper Lithography IP B.V. Modulation device and charged particle multi-beamlet lithography system using the same
US8586949B2 (en) 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
EP2638560B1 (en) 2010-11-13 2017-02-22 Mapper Lithography IP B.V. Charged particle lithography system with aperture array cooling
EP2638559B1 (en) 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Charged particle beam modulator
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
CN103370655B (en) 2010-12-14 2016-03-16 迈普尔平版印刷Ip有限公司 Etching system and in this etching system the method for the treatment of substrate
JP5902201B2 (en) 2011-02-16 2016-04-13 マッパー・リソグラフィー・アイピー・ビー.ブイ. Magnetic shielding system
CN103649836B (en) 2011-04-22 2016-09-28 迈普尔平版印刷Ip有限公司 The network architecture and agreement for lithography machines cluster
TWI486723B (en) 2011-04-28 2015-06-01 Mapper Lithography Ip Bv Method of processing a substrate in a lithography system
CN103930829A (en) 2011-09-12 2014-07-16 迈普尔平版印刷Ip有限公司 Substrate processing apparatus
US20140252953A1 (en) 2011-09-28 2014-09-11 Mapper Lithography Ip B.V. Plasma generator
WO2013132064A2 (en) 2012-03-08 2013-09-12 Mapper Lithography Ip B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
EP2828708A2 (en) 2012-03-20 2015-01-28 Mapper Lithography IP B.V. Arrangement and method for transporting radicals
JP6219374B2 (en) 2012-05-14 2017-10-25 マッパー・リソグラフィー・アイピー・ビー.ブイ. Charged particle lithography system and beam generator
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
KR101945964B1 (en) 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
NL2010760C2 (en) 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
EP2816585A1 (en) * 2013-06-17 2014-12-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam system and method of operating thereof
WO2015024956A1 (en) 2013-08-23 2015-02-26 Mapper Lithography Ip B.V. Drying device for use in a lithography system
KR101722617B1 (en) 2013-11-14 2017-04-03 마퍼 리쏘그라피 아이피 비.브이. Electrode cooling arrangement
CN105874555B (en) 2013-12-30 2018-06-15 迈普尔平版印刷Ip有限公司 Cathode arrangement, electron gun and the lithography system including this electron gun
CN107111251A (en) 2014-11-14 2017-08-29 迈普尔平版印刷Ip有限公司 Loading for transfer substrate in a lithography system locks system and method
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
WO2020030483A1 (en) * 2018-08-09 2020-02-13 Asml Netherlands B.V. An apparatus for multiple charged-particle beams

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Also Published As

Publication number Publication date
KR20060036391A (en) 2006-04-28
EP1830384B1 (en) 2011-09-14
AT524822T (en) 2011-09-15
EP1627412A2 (en) 2006-02-22
US20050161621A1 (en) 2005-07-28
JP4949843B2 (en) 2012-06-13
CN1795529A (en) 2006-06-28
KR101168200B1 (en) 2012-07-25
DE602004005704D1 (en) 2007-05-16
EP1627412B1 (en) 2007-04-04
KR101175523B1 (en) 2012-08-21
EP1830384A2 (en) 2007-09-05
US7084414B2 (en) 2006-08-01
DE602004005704T2 (en) 2007-12-27
JP2007500948A (en) 2007-01-18
CN100543920C (en) 2009-09-23
WO2004107050A3 (en) 2005-04-21
KR20120025629A (en) 2012-03-15
WO2004107050A2 (en) 2004-12-09
EP1830384A3 (en) 2007-09-19

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