AT291776T - Ionenätz-vorrichtung und -verfahren - Google Patents

Ionenätz-vorrichtung und -verfahren

Info

Publication number
AT291776T
AT291776T AT98925778T AT98925778T AT291776T AT 291776 T AT291776 T AT 291776T AT 98925778 T AT98925778 T AT 98925778T AT 98925778 T AT98925778 T AT 98925778T AT 291776 T AT291776 T AT 291776T
Authority
AT
Austria
Prior art keywords
method
apparatus device
ion apparatus
ion
device
Prior art date
Application number
AT98925778T
Other languages
English (en)
Inventor
Jean-Pierre Briand
Original Assignee
Univ Paris Curie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR9706553A priority Critical patent/FR2764110B1/fr
Application filed by Univ Paris Curie filed Critical Univ Paris Curie
Priority to PCT/FR1998/001040 priority patent/WO1998054747A1/fr
Publication of AT291776T publication Critical patent/AT291776T/de

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/047Changing particle velocity
    • H01J2237/0475Changing particle velocity decelerating
AT98925778T 1997-05-28 1998-05-25 Ionenätz-vorrichtung und -verfahren AT291776T (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9706553A FR2764110B1 (fr) 1997-05-28 1997-05-28 Dispositif et procede de gravure par ions
PCT/FR1998/001040 WO1998054747A1 (fr) 1997-05-28 1998-05-25 Dispositif et procede de gravure par ions

Publications (1)

Publication Number Publication Date
AT291776T true AT291776T (de) 2005-04-15

Family

ID=9507337

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98925778T AT291776T (de) 1997-05-28 1998-05-25 Ionenätz-vorrichtung und -verfahren

Country Status (8)

Country Link
US (1) US6402882B1 (de)
EP (1) EP1016117B1 (de)
JP (1) JP2002500808A (de)
KR (1) KR20010013166A (de)
AT (1) AT291776T (de)
DE (1) DE69829487T2 (de)
FR (1) FR2764110B1 (de)
WO (1) WO1998054747A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2793264B1 (fr) * 1999-05-07 2001-06-15 X Ion Procede de nettoyage d'une surface de substrat de silicium et application a la fabrication de composants electroniques integres
FR2794892B1 (fr) * 1999-06-08 2003-06-27 X Ion Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre
FR2804623B1 (fr) * 2000-02-09 2002-05-03 Univ Paris Curie Procede de traitement d'une surface de diamant et surface de diamant correspondante
FR2849266A1 (fr) * 2002-12-18 2004-06-25 Gilles Borsoni Machine de traitement uniforme de surfaces d'echantillons par projection d'ions multicharges
US7015146B2 (en) * 2004-01-06 2006-03-21 International Business Machines Corporation Method of processing backside unlayering of MOSFET devices for electrical and physical characterization including a collimated ion plasma
FR2890231B1 (fr) * 2005-08-29 2009-10-09 Jean Pierre Briand Methode de fabrication de cathodes froides fonctionnant sous faibles tensions par irradiation de films minces de dlc avec des ions multicharges et surfaces emettrices correspondantes
US20090124159A1 (en) * 2007-03-02 2009-05-14 Jean Pierre Briand Method of fabrication of cold cathodes on thin diamondlike carbon films irradiated with multicharged ions and field emissive corresponding surfaces
US8657936B2 (en) * 2009-09-16 2014-02-25 Challen Sullivan Direct replacement air filter with automatic filter media advance and wireless communications
RU187849U1 (ru) * 2018-09-19 2019-03-20 Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" Устройство для определения профиля распределения плотности ионов в пучках

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0328017B2 (de) * 1981-12-18 1991-04-17 Tokyo Shibaura Electric Co
US4761199A (en) * 1985-04-10 1988-08-02 Canon Kabushiki Kaisha Shutter device for ion beam etching apparatus and such etching apparatus using same
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
US4893019A (en) * 1987-05-27 1990-01-09 Mitsubishi Denki Kabushiki Kaisha Ion current generator system for thin film formation, ion implantation, etching and sputtering
US4976843A (en) * 1990-02-02 1990-12-11 Micrion Corporation Particle beam shielding
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
JPH0816607B2 (ja) * 1990-10-30 1996-02-21 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜処理制御方法
DE4204650C1 (de) * 1992-02-15 1993-07-08 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US5462629A (en) * 1992-08-28 1995-10-31 Kawasaki Steel Corp. Surface processing apparatus using neutral beam
US5916424A (en) * 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
US6238582B1 (en) * 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method

Also Published As

Publication number Publication date
JP2002500808A (ja) 2002-01-08
WO1998054747A1 (fr) 1998-12-03
EP1016117A1 (de) 2000-07-05
KR20010013166A (ko) 2001-02-26
DE69829487T2 (de) 2006-02-09
FR2764110A1 (fr) 1998-12-04
US6402882B1 (en) 2002-06-11
FR2764110B1 (fr) 1999-08-20
EP1016117B1 (de) 2005-03-23
DE69829487D1 (de) 2005-04-28

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties