AT283549T - Control of the tension-proof by using gradient layers and planarization - Google Patents

Control of the tension-proof by using gradient layers and planarization

Info

Publication number
AT283549T
AT283549T AT98931529T AT98931529T AT283549T AT 283549 T AT283549 T AT 283549T AT 98931529 T AT98931529 T AT 98931529T AT 98931529 T AT98931529 T AT 98931529T AT 283549 T AT283549 T AT 283549T
Authority
AT
Austria
Prior art keywords
planarization
proof
tension
control
gradient layers
Prior art date
Application number
AT98931529T
Other languages
German (de)
Inventor
Eugene A Fitzgerald
Original Assignee
Massachusetts Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
Priority to US5060297P priority Critical
Priority to US5976597P priority
Application filed by Massachusetts Inst Technology filed Critical Massachusetts Inst Technology
Priority to PCT/US1998/013076 priority patent/WO1998059365A1/en
Publication of AT283549T publication Critical patent/AT283549T/en
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26728449&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AT283549(T) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02496Layer structure
    • H01L21/02505Layer structure consisting of more than two layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02433Crystal orientation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02441Group 14 semiconducting materials
    • H01L21/0245Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02496Layer structure
    • H01L21/02502Layer structure consisting of two layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02496Layer structure
    • H01L21/0251Graded layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/933Germanium or silicon or Ge-Si on III-V
AT98931529T 1997-06-24 1998-06-23 Control of the tension-proof by using gradient layers and planarization AT283549T (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US5060297P true 1997-06-24 1997-06-24
US5976597P true 1997-09-16 1997-09-16
PCT/US1998/013076 WO1998059365A1 (en) 1997-06-24 1998-06-23 CONTROLLING THREADING DISLOCATION DENSITIES IN Ge ON Si USING GRADED GeSi LAYERS AND PLANARIZATION

Publications (1)

Publication Number Publication Date
AT283549T true AT283549T (en) 2004-12-15

Family

ID=26728449

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98931529T AT283549T (en) 1997-06-24 1998-06-23 Control of the tension-proof by using gradient layers and planarization

Country Status (8)

Country Link
US (5) US6107653A (en)
EP (1) EP1016129B2 (en)
JP (1) JP3535527B2 (en)
KR (1) KR100400808B1 (en)
AT (1) AT283549T (en)
CA (1) CA2295069A1 (en)
DE (1) DE69827824T3 (en)
WO (1) WO1998059365A1 (en)

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EP1016129B2 (en) 2009-06-10
US6876010B1 (en) 2005-04-05
KR20010014201A (en) 2001-02-26
DE69827824T3 (en) 2009-09-03
WO1998059365A1 (en) 1998-12-30
US7081410B2 (en) 2006-07-25
EP1016129A1 (en) 2000-07-05
JP3535527B2 (en) 2004-06-07
US6291321B1 (en) 2001-09-18
US6107653A (en) 2000-08-22
JP2000513507A (en) 2000-10-10
US20040262631A1 (en) 2004-12-30
US7250359B2 (en) 2007-07-31
KR100400808B1 (en) 2003-10-08
DE69827824T2 (en) 2005-11-24
CA2295069A1 (en) 1998-12-30
EP1016129B1 (en) 2004-11-24
US20020084000A1 (en) 2002-07-04

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