AT275761T - Semiconductor substrate and process for its manufacture - Google Patents
Semiconductor substrate and process for its manufactureInfo
- Publication number
- AT275761T AT275761T AT98302187T AT98302187T AT275761T AT 275761 T AT275761 T AT 275761T AT 98302187 T AT98302187 T AT 98302187T AT 98302187 T AT98302187 T AT 98302187T AT 275761 T AT275761 T AT 275761T
- Authority
- AT
- Austria
- Prior art keywords
- manufacture
- process
- semiconductor substrate
- semiconductor
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7351997 | 1997-03-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT275761T true AT275761T (en) | 2004-09-15 |
Family
ID=13520585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98302187T AT275761T (en) | 1997-03-26 | 1998-03-24 | Semiconductor substrate and process for its manufacture |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20030190794A1 (en) |
| EP (1) | EP0867919B1 (en) |
| CN (1) | CN1114936C (en) |
| AT (1) | AT275761T (en) |
| AU (1) | AU742371B2 (en) |
| CA (1) | CA2233132C (en) |
| DE (1) | DE69826053T2 (en) |
| SG (1) | SG68033A1 (en) |
| TW (1) | TW376585B (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143628A (en) * | 1997-03-27 | 2000-11-07 | Canon Kabushiki Kaisha | Semiconductor substrate and method of manufacturing the same |
| US8507361B2 (en) | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
| TWI226139B (en) | 2002-01-31 | 2005-01-01 | Osram Opto Semiconductors Gmbh | Method to manufacture a semiconductor-component |
| US20060180804A1 (en) * | 2003-01-31 | 2006-08-17 | Peter Stauss | Thin-film semiconductor component and production method for said component |
| US8524573B2 (en) | 2003-01-31 | 2013-09-03 | Osram Opto Semiconductors Gmbh | Method for separating a semiconductor layer from a substrate by irradiating with laser pulses |
| KR20060017771A (en) | 2003-05-06 | 2006-02-27 | 캐논 가부시끼가이샤 | Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
| JP2004335642A (en) | 2003-05-06 | 2004-11-25 | Canon Inc | Substrate and its producing process |
| DE102005047149A1 (en) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Epitaxial substrate, component manufactured therewith and corresponding manufacturing methods |
| DE102007021991B4 (en) * | 2007-05-10 | 2015-03-26 | Infineon Technologies Austria Ag | A method of manufacturing a semiconductor device by forming a porous intermediate layer |
| KR101443580B1 (en) * | 2007-05-11 | 2014-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
| DE102009004560B3 (en) * | 2009-01-14 | 2010-08-26 | Institut Für Solarenergieforschung Gmbh | Method for producing a semiconductor component, in particular a solar cell, based on a germanium thin film |
| DE102009004559A1 (en) * | 2009-01-14 | 2010-07-22 | Institut Für Solarenergieforschung Gmbh | Method for producing a semiconductor component, in particular a solar cell, based on a semiconductor thin film with a direct semiconductor material |
| US8043938B2 (en) * | 2009-05-14 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate and SOI substrate |
| US9847243B2 (en) | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
| US8441071B2 (en) * | 2010-01-05 | 2013-05-14 | International Business Machines Corporation | Body contacted transistor with reduced parasitic capacitance |
| JP5926887B2 (en) * | 2010-02-03 | 2016-05-25 | 株式会社半導体エネルギー研究所 | Method for manufacturing SOI substrate |
| FR2995444B1 (en) * | 2012-09-10 | 2016-11-25 | Soitec Silicon On Insulator | Method for detaching a layer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3581514D1 (en) * | 1984-05-29 | 1991-02-28 | Mitsui Toatsu Chemicals | Film for treatment of semiconductor wafers. |
| US4819387A (en) * | 1987-12-16 | 1989-04-11 | Motorola, Inc. | Method of slicing semiconductor crystal |
| DE69331816T2 (en) * | 1992-01-31 | 2002-08-29 | Canon Kk | A process for producing a semiconductor substrate |
| DE69628505T2 (en) * | 1995-07-21 | 2004-05-06 | Canon K.K. | A semiconductive substrate and its manufacturing method |
| EP0797258B1 (en) * | 1996-03-18 | 2011-07-20 | Sony Corporation | Method for making thin film semiconductor, solar cell, and light emitting diode |
| EP0840381A3 (en) * | 1996-10-31 | 1999-08-04 | Sony Corporation | Thin-film semiconductor device and its manufacturing method and apparatus and thin-film semiconductor solar cell module and its manufacturing method |
| SG54593A1 (en) * | 1996-11-15 | 1998-11-16 | Canon Kk | Method of manufacturing semiconductor article |
-
1998
- 1998-03-24 AT AT98302187T patent/AT275761T/en not_active IP Right Cessation
- 1998-03-24 EP EP19980302187 patent/EP0867919B1/en not_active Expired - Lifetime
- 1998-03-24 TW TW087104398A patent/TW376585B/en not_active IP Right Cessation
- 1998-03-24 DE DE69826053T patent/DE69826053T2/en not_active Expired - Lifetime
- 1998-03-25 SG SG1998000614A patent/SG68033A1/en unknown
- 1998-03-25 US US09/047,338 patent/US20030190794A1/en not_active Abandoned
- 1998-03-25 CA CA 2233132 patent/CA2233132C/en not_active Expired - Fee Related
- 1998-03-26 CN CN 98114894 patent/CN1114936C/en not_active IP Right Cessation
- 1998-03-26 AU AU59666/98A patent/AU742371B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CA2233132A1 (en) | 1998-09-26 |
| SG68033A1 (en) | 1999-10-19 |
| AU5966698A (en) | 1998-10-01 |
| DE69826053T2 (en) | 2005-09-29 |
| EP0867919A3 (en) | 1999-06-16 |
| CA2233132C (en) | 2002-04-02 |
| CN1200560A (en) | 1998-12-02 |
| EP0867919A2 (en) | 1998-09-30 |
| US20030190794A1 (en) | 2003-10-09 |
| AU742371B2 (en) | 2002-01-03 |
| CN1114936C (en) | 2003-07-16 |
| KR19980080688A (en) | 1998-11-25 |
| EP0867919B1 (en) | 2004-09-08 |
| TW376585B (en) | 1999-12-11 |
| DE69826053D1 (en) | 2004-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |