AT275761T - Semiconductor substrate and process for its manufacture - Google Patents

Semiconductor substrate and process for its manufacture

Info

Publication number
AT275761T
AT275761T AT98302187T AT98302187T AT275761T AT 275761 T AT275761 T AT 275761T AT 98302187 T AT98302187 T AT 98302187T AT 98302187 T AT98302187 T AT 98302187T AT 275761 T AT275761 T AT 275761T
Authority
AT
Austria
Prior art keywords
manufacture
process
semiconductor substrate
semiconductor
substrate
Prior art date
Application number
AT98302187T
Other languages
German (de)
Inventor
Kazuaki Ohmi
Takao Yonehara
Kiyofumi Sakaguchi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP7351997 priority Critical
Application filed by Canon Kk filed Critical Canon Kk
Publication of AT275761T publication Critical patent/AT275761T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003Characterised by the substrate
    • H01L21/2007Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
AT98302187T 1997-03-26 1998-03-24 Semiconductor substrate and process for its manufacture AT275761T (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7351997 1997-03-26

Publications (1)

Publication Number Publication Date
AT275761T true AT275761T (en) 2004-09-15

Family

ID=13520585

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98302187T AT275761T (en) 1997-03-26 1998-03-24 Semiconductor substrate and process for its manufacture

Country Status (9)

Country Link
US (1) US20030190794A1 (en)
EP (1) EP0867919B1 (en)
CN (1) CN1114936C (en)
AT (1) AT275761T (en)
AU (1) AU742371B2 (en)
CA (1) CA2233132C (en)
DE (1) DE69826053T2 (en)
SG (1) SG68033A1 (en)
TW (1) TW376585B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143628A (en) * 1997-03-27 2000-11-07 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
US20060180804A1 (en) * 2003-01-31 2006-08-17 Peter Stauss Thin-film semiconductor component and production method for said component
US8524573B2 (en) 2003-01-31 2013-09-03 Osram Opto Semiconductors Gmbh Method for separating a semiconductor layer from a substrate by irradiating with laser pulses
KR20060017771A (en) 2003-05-06 2006-02-27 캐논 가부시끼가이샤 Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
JP2004335642A (en) 2003-05-06 2004-11-25 Canon Inc Substrate and its producing process
DE102005047149A1 (en) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxial substrate, component manufactured therewith and corresponding manufacturing methods
DE102007021991B4 (en) * 2007-05-10 2015-03-26 Infineon Technologies Austria Ag A method of manufacturing a semiconductor device by forming a porous intermediate layer
KR101443580B1 (en) * 2007-05-11 2014-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
DE102009004560B3 (en) * 2009-01-14 2010-08-26 Institut Für Solarenergieforschung Gmbh Method for producing a semiconductor component, in particular a solar cell, based on a germanium thin film
DE102009004559A1 (en) * 2009-01-14 2010-07-22 Institut Für Solarenergieforschung Gmbh Method for producing a semiconductor component, in particular a solar cell, based on a semiconductor thin film with a direct semiconductor material
US8043938B2 (en) * 2009-05-14 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and SOI substrate
US9847243B2 (en) 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
US8441071B2 (en) * 2010-01-05 2013-05-14 International Business Machines Corporation Body contacted transistor with reduced parasitic capacitance
JP5926887B2 (en) * 2010-02-03 2016-05-25 株式会社半導体エネルギー研究所 Method for manufacturing SOI substrate
FR2995444B1 (en) * 2012-09-10 2016-11-25 Soitec Silicon On Insulator Method for detaching a layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3581514D1 (en) * 1984-05-29 1991-02-28 Mitsui Toatsu Chemicals Film for treatment of semiconductor wafers.
US4819387A (en) * 1987-12-16 1989-04-11 Motorola, Inc. Method of slicing semiconductor crystal
DE69331816T2 (en) * 1992-01-31 2002-08-29 Canon Kk A process for producing a semiconductor substrate
DE69628505T2 (en) * 1995-07-21 2004-05-06 Canon K.K. A semiconductive substrate and its manufacturing method
EP0797258B1 (en) * 1996-03-18 2011-07-20 Sony Corporation Method for making thin film semiconductor, solar cell, and light emitting diode
EP0840381A3 (en) * 1996-10-31 1999-08-04 Sony Corporation Thin-film semiconductor device and its manufacturing method and apparatus and thin-film semiconductor solar cell module and its manufacturing method
SG54593A1 (en) * 1996-11-15 1998-11-16 Canon Kk Method of manufacturing semiconductor article

Also Published As

Publication number Publication date
CA2233132A1 (en) 1998-09-26
SG68033A1 (en) 1999-10-19
AU5966698A (en) 1998-10-01
DE69826053T2 (en) 2005-09-29
EP0867919A3 (en) 1999-06-16
CA2233132C (en) 2002-04-02
CN1200560A (en) 1998-12-02
EP0867919A2 (en) 1998-09-30
US20030190794A1 (en) 2003-10-09
AU742371B2 (en) 2002-01-03
CN1114936C (en) 2003-07-16
KR19980080688A (en) 1998-11-25
EP0867919B1 (en) 2004-09-08
TW376585B (en) 1999-12-11
DE69826053D1 (en) 2004-10-14

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties