AT169350T - A method of manufacturing a transistor MOS laterally confined monocrystalline region by means of selective epitaxy and its application to manufacturing a bipolar transistor as well as a - Google Patents
A method of manufacturing a transistor MOS laterally confined monocrystalline region by means of selective epitaxy and its application to manufacturing a bipolar transistor as well as aInfo
- Publication number
- AT169350T AT169350T AT93118225T AT93118225T AT169350T AT 169350 T AT169350 T AT 169350T AT 93118225 T AT93118225 T AT 93118225T AT 93118225 T AT93118225 T AT 93118225T AT 169350 T AT169350 T AT 169350T
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- transistor
- well
- application
- means
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4240924 | 1992-12-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
AT169350T true AT169350T (en) | 1998-08-15 |
Family
ID=6474444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT93118225T AT169350T (en) | 1992-12-04 | 1993-11-10 | A method of manufacturing a transistor MOS laterally confined monocrystalline region by means of selective epitaxy and its application to manufacturing a bipolar transistor as well as a |
Country Status (4)
Country | Link |
---|---|
US (1) | US5432120A (en) |
EP (1) | EP0600276B1 (en) |
JP (1) | JPH06232061A (en) |
AT (1) | AT169350T (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0851109A (en) * | 1994-04-11 | 1996-02-20 | Texas Instr Inc <Ti> | Method for growing silicon epitaxialy in window of wafer patterned with oxide |
US6171966B1 (en) * | 1996-08-15 | 2001-01-09 | Applied Materials, Inc. | Delineation pattern for epitaxial depositions |
US6077790A (en) * | 1997-03-14 | 2000-06-20 | Micron Technology, Inc. | Etching process using a buffer layer |
DE10005442A1 (en) * | 2000-02-08 | 2001-08-16 | Infineon Technologies Ag | bipolar transistor |
EP1152462A1 (en) * | 2000-05-05 | 2001-11-07 | Infineon Technologies AG | Method of manufacturing a bipolar transistor |
DE10250204B8 (en) * | 2002-10-28 | 2008-09-11 | Infineon Technologies Ag | Method for producing collector regions of a transistor structure |
US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
EP1882268B1 (en) * | 2005-05-17 | 2016-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
WO2007014294A2 (en) | 2005-07-26 | 2007-02-01 | Amberwave Systems Corporation | Solutions integrated circuit integration of alternative active area materials |
US7638842B2 (en) | 2005-09-07 | 2009-12-29 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures on insulators |
US20070054467A1 (en) * | 2005-09-07 | 2007-03-08 | Amberwave Systems Corporation | Methods for integrating lattice-mismatched semiconductor structure on insulators |
WO2007112066A2 (en) | 2006-03-24 | 2007-10-04 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures and related methods for device fabrication |
EP2062290B1 (en) * | 2006-09-07 | 2019-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect reduction using aspect ratio trapping |
US7875958B2 (en) | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
US7799592B2 (en) | 2006-09-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-gate field-effect transistors formed by aspect ratio trapping |
US8502263B2 (en) | 2006-10-19 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitter-based devices with lattice-mismatched semiconductor structures |
WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
US8344242B2 (en) | 2007-09-07 | 2013-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-junction solar cells |
US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
EP2528087B1 (en) | 2008-09-19 | 2016-06-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of devices by epitaxial layer overgrowth |
US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
WO2010114956A1 (en) | 2009-04-02 | 2010-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices formed from a non-polar plane of a crystalline material and method of making the same |
US8603883B2 (en) | 2011-11-16 | 2013-12-10 | International Business Machines Corporation | Interface control in a bipolar junction transistor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3639186A (en) * | 1969-02-24 | 1972-02-01 | Ibm | Process for the production of finely etched patterns |
JPS577959A (en) * | 1980-06-19 | 1982-01-16 | Toshiba Corp | Semiconductor device |
US4448797A (en) * | 1981-02-04 | 1984-05-15 | Xerox Corporation | Masking techniques in chemical vapor deposition |
US4885617A (en) * | 1986-11-18 | 1989-12-05 | Siemens Aktiengesellschaft | Metal-oxide semiconductor (MOS) field effect transistor having extremely shallow source/drain zones and silicide terminal zones, and a process for producing the transistor circuit |
JPS6445165A (en) * | 1987-08-13 | 1989-02-17 | Toshiba Corp | Semiconductor device and manufacture thereof |
DE68913419T2 (en) * | 1988-03-25 | 1994-06-01 | Thomson Csf | Manufacturing process of field emission-electron sources and application for production of emitter-matrices. |
-
1993
- 1993-11-10 AT AT93118225T patent/AT169350T/en unknown
- 1993-11-10 EP EP19930118225 patent/EP0600276B1/en not_active Expired - Lifetime
- 1993-11-19 US US08/154,551 patent/US5432120A/en not_active Expired - Lifetime
- 1993-12-01 JP JP32971593A patent/JPH06232061A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0600276B1 (en) | 1998-08-05 |
US5432120A (en) | 1995-07-11 |
JPH06232061A (en) | 1994-08-19 |
EP0600276A2 (en) | 1994-06-08 |
EP0600276A3 (en) | 1996-05-01 |
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