AT169350T - A method of manufacturing a transistor MOS laterally confined monocrystalline region by means of selective epitaxy and its application to manufacturing a bipolar transistor as well as a - Google Patents

A method of manufacturing a transistor MOS laterally confined monocrystalline region by means of selective epitaxy and its application to manufacturing a bipolar transistor as well as a

Info

Publication number
AT169350T
AT169350T AT93118225T AT93118225T AT169350T AT 169350 T AT169350 T AT 169350T AT 93118225 T AT93118225 T AT 93118225T AT 93118225 T AT93118225 T AT 93118225T AT 169350 T AT169350 T AT 169350T
Authority
AT
Austria
Prior art keywords
manufacturing
transistor
well
application
means
Prior art date
Application number
AT93118225T
Other languages
German (de)
Inventor
Thomas F Dr Meister
Reinhard Dr Stengl
- Bldg
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE4240924 priority Critical
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of AT169350T publication Critical patent/AT169350T/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66272Silicon vertical transistors
    • H01L29/66287Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/04Pattern deposit, e.g. by using masks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66651Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
AT93118225T 1992-12-04 1993-11-10 A method of manufacturing a transistor MOS laterally confined monocrystalline region by means of selective epitaxy and its application to manufacturing a bipolar transistor as well as a AT169350T (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE4240924 1992-12-04

Publications (1)

Publication Number Publication Date
AT169350T true AT169350T (en) 1998-08-15

Family

ID=6474444

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93118225T AT169350T (en) 1992-12-04 1993-11-10 A method of manufacturing a transistor MOS laterally confined monocrystalline region by means of selective epitaxy and its application to manufacturing a bipolar transistor as well as a

Country Status (4)

Country Link
US (1) US5432120A (en)
EP (1) EP0600276B1 (en)
JP (1) JPH06232061A (en)
AT (1) AT169350T (en)

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* Cited by examiner, † Cited by third party
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JPH0851109A (en) * 1994-04-11 1996-02-20 Texas Instr Inc <Ti> Method for growing silicon epitaxialy in window of wafer patterned with oxide
US6171966B1 (en) * 1996-08-15 2001-01-09 Applied Materials, Inc. Delineation pattern for epitaxial depositions
US6077790A (en) * 1997-03-14 2000-06-20 Micron Technology, Inc. Etching process using a buffer layer
DE10005442A1 (en) * 2000-02-08 2001-08-16 Infineon Technologies Ag bipolar transistor
EP1152462A1 (en) * 2000-05-05 2001-11-07 Infineon Technologies AG Method of manufacturing a bipolar transistor
DE10250204B8 (en) * 2002-10-28 2008-09-11 Infineon Technologies Ag Method for producing collector regions of a transistor structure
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
EP1882268B1 (en) * 2005-05-17 2016-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
WO2007014294A2 (en) 2005-07-26 2007-02-01 Amberwave Systems Corporation Solutions integrated circuit integration of alternative active area materials
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
EP2062290B1 (en) * 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US8502263B2 (en) 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US8344242B2 (en) 2007-09-07 2013-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-junction solar cells
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
EP2528087B1 (en) 2008-09-19 2016-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of devices by epitaxial layer overgrowth
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
WO2010114956A1 (en) 2009-04-02 2010-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Devices formed from a non-polar plane of a crystalline material and method of making the same
US8603883B2 (en) 2011-11-16 2013-12-10 International Business Machines Corporation Interface control in a bipolar junction transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3639186A (en) * 1969-02-24 1972-02-01 Ibm Process for the production of finely etched patterns
JPS577959A (en) * 1980-06-19 1982-01-16 Toshiba Corp Semiconductor device
US4448797A (en) * 1981-02-04 1984-05-15 Xerox Corporation Masking techniques in chemical vapor deposition
US4885617A (en) * 1986-11-18 1989-12-05 Siemens Aktiengesellschaft Metal-oxide semiconductor (MOS) field effect transistor having extremely shallow source/drain zones and silicide terminal zones, and a process for producing the transistor circuit
JPS6445165A (en) * 1987-08-13 1989-02-17 Toshiba Corp Semiconductor device and manufacture thereof
DE68913419T2 (en) * 1988-03-25 1994-06-01 Thomson Csf Manufacturing process of field emission-electron sources and application for production of emitter-matrices.

Also Published As

Publication number Publication date
EP0600276B1 (en) 1998-08-05
US5432120A (en) 1995-07-11
JPH06232061A (en) 1994-08-19
EP0600276A2 (en) 1994-06-08
EP0600276A3 (en) 1996-05-01

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