AT112418T - A process for the production of artificial high-temperature superconductors having a multilayered structure. - Google Patents

A process for the production of artificial high-temperature superconductors having a multilayered structure.

Info

Publication number
AT112418T
AT112418T AT88108908T AT88108908T AT112418T AT 112418 T AT112418 T AT 112418T AT 88108908 T AT88108908 T AT 88108908T AT 88108908 T AT88108908 T AT 88108908T AT 112418 T AT112418 T AT 112418T
Authority
AT
Austria
Prior art keywords
production
process
multilayered structure
temperature superconductors
artificial high
Prior art date
Application number
AT88108908T
Other languages
German (de)
Inventor
Volker Dr Graf
Carl Alexander Prof Dr Mueller
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Priority to EP88108908A priority Critical patent/EP0344352B1/en
Publication of AT112418T publication Critical patent/AT112418T/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68Crystals with laminate structure, e.g. "superlattices"
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/02Details
    • H01L39/12Details characterised by the material
    • H01L39/125Ceramic materials
    • H01L39/126Ceramic materials comprising copper oxide
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2422Processes for depositing or forming superconductor layers
    • H01L39/2454Processes for depositing or forming superconductor layers characterised by the substrate
    • H01L39/2458Monocrystalline substrates, e.g. epitaxial growth
AT88108908T 1988-06-03 1988-06-03 A process for the production of artificial high-temperature superconductors having a multilayered structure. AT112418T (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP88108908A EP0344352B1 (en) 1988-06-03 1988-06-03 Method for making artificial layered high-Tc superconductors

Publications (1)

Publication Number Publication Date
AT112418T true AT112418T (en) 1994-10-15

Family

ID=8199027

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88108908T AT112418T (en) 1988-06-03 1988-06-03 A process for the production of artificial high-temperature superconductors having a multilayered structure.

Country Status (8)

Country Link
US (1) US5439876A (en)
EP (1) EP0344352B1 (en)
JP (1) JPH0761920B2 (en)
AT (1) AT112418T (en)
BR (1) BR8902555A (en)
CA (1) CA1330193C (en)
DE (2) DE3851701T2 (en)
ES (1) ES2060622T3 (en)

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US20060219157A1 (en) 2001-06-28 2006-10-05 Antti Rahtu Oxide films containing titanium
FI108375B (en) * 1998-09-11 2002-01-15 Asm Microchemistry Oy preparing Menetelmõ eristõvien oksidiohutkalvojen
US7208041B2 (en) * 2000-02-23 2007-04-24 Ceracomp Co., Ltd. Method for single crystal growth of perovskite oxides
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6765178B2 (en) * 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6613656B2 (en) * 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US6869838B2 (en) 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US8202364B2 (en) * 2002-10-11 2012-06-19 Ceracomp Co., Ltd. Method for solid-state single crystal growth
KR100564092B1 (en) * 2002-10-11 2006-03-27 주식회사 세라콤 Method for the Solid-State Single Crystal Growth
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
JP2007523994A (en) 2003-06-18 2007-08-23 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Atomic layer deposition of the barrier material
JP4938534B2 (en) * 2007-04-12 2012-05-23 アルバックテクノ株式会社 Vacuum melting apparatus and crucible unit
US20110293830A1 (en) 2010-02-25 2011-12-01 Timo Hatanpaa Precursors and methods for atomic layer deposition of transition metal oxides
US9062390B2 (en) 2011-09-12 2015-06-23 Asm International N.V. Crystalline strontium titanate and methods of forming the same

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SE393967B (en) * 1974-11-29 1977-05-31 Sateko Oy Process and to perform stroleggning between layers in a timber packages
FI64878C (en) * 1982-05-10 1984-01-10 Lohja Ab Oy Kombinationsfilm Foer isynnerhet tunnfilmelektroluminensstrukturer
JPH0218320B2 (en) * 1983-10-31 1990-04-25 Nippon Telegraph & Telephone
GB2162862B (en) * 1984-07-26 1988-10-19 Hitoshi Abe A method of growing a thin film single crystalline semiconductor
DE3786237D1 (en) * 1986-12-10 1993-07-22 Fuji Seiki Kk Device for vacuum evaporation.
US4983575A (en) * 1987-03-25 1991-01-08 Hitachi, Ltd. Superconducting thin films made of stacked composite oxide layers
JPH0719922B2 (en) * 1987-07-29 1995-03-06 松下電器産業株式会社 Superconductor and integrated superconducting device
EP0305292B1 (en) * 1987-08-24 1995-12-27 Sumitomo Electric Industries Limited A process for preparing a thin film of superconducting compound oxide
JPS6465885A (en) * 1987-09-07 1989-03-13 Sanyo Electric Co Manufacture of superconducting thin film

Also Published As

Publication number Publication date
CA1330193C (en) 1994-06-14
JPH0761920B2 (en) 1995-07-05
BR8902555A (en) 1990-01-23
EP0344352B1 (en) 1994-09-28
DE3851701T2 (en) 1995-03-30
DE3851701D1 (en) 1994-11-03
ES2060622T3 (en) 1994-12-01
US5439876A (en) 1995-08-08
JPH029795A (en) 1990-01-12
EP0344352A1 (en) 1989-12-06

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee