TW200512848A - Transparent packaging in wafer level - Google Patents

Transparent packaging in wafer level

Info

Publication number
TW200512848A
TW200512848A TW092126690A TW92126690A TW200512848A TW 200512848 A TW200512848 A TW 200512848A TW 092126690 A TW092126690 A TW 092126690A TW 92126690 A TW92126690 A TW 92126690A TW 200512848 A TW200512848 A TW 200512848A
Authority
TW
Taiwan
Prior art keywords
wafer
wafer level
backside
extending traces
transparent packaging
Prior art date
Application number
TW092126690A
Other languages
English (en)
Other versions
TWI226090B (en
Inventor
Jian-Wen Lo
Shin-Hua Chao
Chia-Yi Hu
Original Assignee
Advanced Semiconductor Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW092126690A priority Critical patent/TWI226090B/zh
Priority to US10/948,214 priority patent/US20050095750A1/en
Application granted granted Critical
Publication of TWI226090B publication Critical patent/TWI226090B/zh
Publication of TW200512848A publication Critical patent/TW200512848A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Laminated Bodies (AREA)
TW092126690A 2003-09-26 2003-09-26 Transparent packaging in wafer level TWI226090B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW092126690A TWI226090B (en) 2003-09-26 2003-09-26 Transparent packaging in wafer level
US10/948,214 US20050095750A1 (en) 2003-09-26 2004-09-24 Wafer level transparent packaging

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092126690A TWI226090B (en) 2003-09-26 2003-09-26 Transparent packaging in wafer level

Publications (2)

Publication Number Publication Date
TWI226090B TWI226090B (en) 2005-01-01
TW200512848A true TW200512848A (en) 2005-04-01

Family

ID=34546318

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092126690A TWI226090B (en) 2003-09-26 2003-09-26 Transparent packaging in wafer level

Country Status (2)

Country Link
US (1) US20050095750A1 (zh)
TW (1) TWI226090B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241149B (zh) * 2013-06-18 2016-12-28 常州银河世纪微电子有限公司 一种半导体芯片的焊接方法

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TWI232560B (en) * 2002-04-23 2005-05-11 Sanyo Electric Co Semiconductor device and its manufacture
US7579681B2 (en) * 2002-06-11 2009-08-25 Micron Technology, Inc. Super high density module with integrated wafer level packages
TWI229435B (en) * 2002-06-18 2005-03-11 Sanyo Electric Co Manufacture of semiconductor device
TWI227550B (en) * 2002-10-30 2005-02-01 Sanyo Electric Co Semiconductor device manufacturing method
JP4401181B2 (ja) * 2003-08-06 2010-01-20 三洋電機株式会社 半導体装置及びその製造方法
JP4703127B2 (ja) * 2004-03-31 2011-06-15 ルネサスエレクトロニクス株式会社 半導体ウェーハ、半導体チップおよびその製造方法
KR100556351B1 (ko) * 2004-07-27 2006-03-03 동부아남반도체 주식회사 반도체 소자의 금속 패드 및 금속 패드 본딩 방법
TWI324800B (en) * 2005-12-28 2010-05-11 Sanyo Electric Co Method for manufacturing semiconductor device
TWI303870B (en) * 2005-12-30 2008-12-01 Advanced Semiconductor Eng Structure and mtehod for packaging a chip
KR100691398B1 (ko) * 2006-03-14 2007-03-12 삼성전자주식회사 미소소자 패키지 및 그 제조방법
KR100817059B1 (ko) 2006-09-11 2008-03-27 삼성전자주식회사 박형 반도체 패키지 제조방법
KR100769722B1 (ko) * 2006-10-10 2007-10-24 삼성전기주식회사 이미지센서의 웨이퍼 레벨 칩 스케일 패키지 및 그제조방법
JP5028988B2 (ja) * 2006-12-13 2012-09-19 ヤマハ株式会社 半導体装置の製造方法
US20090026562A1 (en) * 2007-07-26 2009-01-29 Visera Technologies Company Limited Package structure for optoelectronic device
US7932179B2 (en) * 2007-07-27 2011-04-26 Micron Technology, Inc. Method for fabricating semiconductor device having backside redistribution layers
TWI375321B (en) * 2007-08-24 2012-10-21 Xintec Inc Electronic device wafer level scale packages and fabrication methods thereof
US7897502B2 (en) * 2008-09-10 2011-03-01 Stats Chippac, Ltd. Method of forming vertically offset bond on trace interconnects on recessed and raised bond fingers
US8236613B2 (en) * 2010-05-24 2012-08-07 Alpha & Omega Semiconductor Inc. Wafer level chip scale package method using clip array
DE102011112659B4 (de) * 2011-09-06 2022-01-27 Vishay Semiconductor Gmbh Oberflächenmontierbares elektronisches Bauelement
CN103065985B (zh) * 2011-10-21 2015-04-22 中国科学院上海微系统与信息技术研究所 双面布线封装的圆片级大厚度光敏bcb背面制作方法
KR101419600B1 (ko) * 2012-11-20 2014-07-17 앰코 테크놀로지 코리아 주식회사 지문인식센서 패키지 및 그 제조 방법
US10141202B2 (en) * 2013-05-20 2018-11-27 Qualcomm Incorporated Semiconductor device comprising mold for top side and sidewall protection
JP6189208B2 (ja) * 2013-12-26 2017-08-30 株式会社ディスコ ウエーハの加工方法
JP6325279B2 (ja) * 2014-02-21 2018-05-16 株式会社ディスコ ウエーハの加工方法
TWI529891B (zh) * 2014-05-01 2016-04-11 精材科技股份有限公司 半導體結構及其製作方法
CN104795372A (zh) * 2015-03-27 2015-07-22 江阴长电先进封装有限公司 一种指纹识别传感器芯片的封装结构
CN105552043A (zh) * 2015-12-28 2016-05-04 江阴长电先进封装有限公司 一种指纹识别传感器的封装结构
DE102017122650B4 (de) * 2017-09-28 2023-02-09 Infineon Technologies Ag Halbleiterchip einschliesslich einer selbstausgerichteten rückseitigen leitfähigen schicht und verfahren zum herstellen desselben
CN109692828B (zh) * 2019-02-18 2024-01-23 成都泰美克晶体技术有限公司 一种适用于1210封装尺寸的晶片挑选治具
US11201096B2 (en) 2019-07-09 2021-12-14 Texas Instruments Incorporated Packaged device with die wrapped by a substrate
FR3104317A1 (fr) 2019-12-04 2021-06-11 Stmicroelectronics (Tours) Sas Procédé de fabrication de puces électroniques
FR3126540A1 (fr) * 2021-08-31 2023-03-03 Stmicroelectronics (Tours) Sas Procédé de fabrication de puces électroniques

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IL108359A (en) * 1994-01-17 2001-04-30 Shellcase Ltd Method and device for creating integrated circular devices
US6693358B2 (en) * 2000-10-23 2004-02-17 Matsushita Electric Industrial Co., Ltd. Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device
TWI232560B (en) * 2002-04-23 2005-05-11 Sanyo Electric Co Semiconductor device and its manufacture
TWI229435B (en) * 2002-06-18 2005-03-11 Sanyo Electric Co Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241149B (zh) * 2013-06-18 2016-12-28 常州银河世纪微电子有限公司 一种半导体芯片的焊接方法

Also Published As

Publication number Publication date
TWI226090B (en) 2005-01-01
US20050095750A1 (en) 2005-05-05

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